DLA MIL-PRF-19500 545 J-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON POWER TYPES 2N5151 2N5153 2N5151L 2N5153L 2N5151U3 AND 2N5153U3 JAN JANTX JANTXV JANS JANHC AND JANKC JANSMB.pdf
《DLA MIL-PRF-19500 545 J-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON POWER TYPES 2N5151 2N5153 2N5151L 2N5153L 2N5151U3 AND 2N5153U3 JAN JANTX JANTXV JANS JANHC AND JANKC JANSMB.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 545 J-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON POWER TYPES 2N5151 2N5153 2N5151L 2N5153L 2N5151U3 AND 2N5153U3 JAN JANTX JANTXV JANS JANHC AND JANKC JANSMB.pdf(31页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/545J 6 February 2013 SUPERSEDING MIL-PRF-19500/545H 12 September 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP,
2、 JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, AND JANKCCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described her
3、ein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated devi
4、ce type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions
5、. See figure 1 (similar to TO-205), figures 2 and 3, (JANHC and JANKC), and figure 4 (U3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTTA= +25C (1) PTTC= +25C (1) RJA(2) RJC(2) VCBOVCEOVEBOICIC(3) Reverse pulse energy (4) TSTGand TJW W C/W C/W V dc V dc V dc A dc A dc mj C 2N5
6、151, L 2N5153, L 1 1 10 10 175 175 10 10 100 100 80 80 5.5 5.5 2 2 10 10 15 15 -65 to + 200 2N5151U3 2N5153U3 1.16 1.16 100 100 150 150 1.75 1.75 100 100 80 80 5.5 5.5 2 2 10 10 15 15 -65 to + 200 (1) See figures 5, 6, 7, and 8 for temperature-power derating curves. (2) See figures 9, 10, and 11 for
7、 transient thermal impedance graph. (3) This value applies for Pw 8.3 ms, duty cycle 1 percent. (4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit figure 12. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or ques
8、tions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:
9、/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 May 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 2 1.4 Primary electrical characteristics at
10、 TC= +25C. Limits hFE2(1) VCE= 5 V IC= 2.5 A dc |hfe| VCE= 5 V IC= 500 mA dc f = 10 MHz VBE(sat)2(1) IC= 5 A dc IB= 500 mA dc VCE(sat)2(1) IC= 5 A dc IB= 500 mA dc Cobo VCB= 10 V dc IE= 0 f = 1 MHz 2N5151 (2) 2N5153 (2) 2N5151 (2) 2N5153 (2) Min Max (TO-205) Max (U3) 30 90 90 70 200 200 6 7 V dc 2.2
11、 2.2 V dc 1.5 1.5 pF 250 250 (1) Pulsed, see 4.5.1. (2) The limits specified apply to all package outlines unless otherwise stated. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docu
12、ments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or
13、5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docum
14、ents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http
15、s:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this docume
16、nt and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
17、-,-MIL-PRF-19500/545J 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. CD shall not va
18、ry more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
19、MMC. 8. LU applied between L1and L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be electrically and mechanically connected to the case. 11. r (radius) applies to both inside corners of tab. 12. In accordance w
20、ith ASME Y14.5M, diameters are equivalent to x symbology. 13. For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum. 14. For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum. 15. Lead designation, depen
21、ding on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 = collector. FIGURE 1. Physical dimensions (TO-205). Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08
22、 TP 7 LD .016 .021 0.41 0.53 8, 9 LL See notes 8, 9, 12, 13 LU .016 .019 0.41 0.48 8, 9 L1.050 1.27 8, 9 L2.250 6.35 8, 9 Q .050 1.27 6 TL .029 .045 0.74 1.14 4, 5 TW .028 .034 0.71 0.86 3 r .010 0.25 11 45 TP 45 TP 7 P .100 2.54 TO-205 Provided by IHSNot for ResaleNo reproduction or networking perm
23、itted without license from IHS-,-,-MIL-PRF-19500/545J 4 Ltr Dimensions Inches Millimeters Min Max Min Max A .100 .105 2.54 2.67 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical
24、characteristics of the die are; 5. Thickness: .0078 inch (0.198 mm) nominal, tolerance is .005 inch (0.13 mm). Top metal: Aluminum, 25,000 minimum, 33,000 nominal. Back metal: Gold 1,500 minimum, 2,500 nominal. Back side: Collector. Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minim
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