DLA MIL-PRF-19500 538 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6676 2N6678 2N6676T1 2N6678T1 2N6676T3 2N6678T3 2N6691 AND 2N6693 JAN JANTX JANTXV JANS JANSMA.pdf

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1、 MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP,

2、 JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consis

3、t of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provid

4、ed for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which h

5、ave passed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693, figure 3 (TO-254AA) - 2N6676T1, 2N6678T1, figure 4 (TO-257AA) - 2N6676T3, 2N6678T3, and figure 5 (JANHC and JANKC). 1.3 Maximum ratings. Types PTTA= +25C PT(1) TC= +25C RJC

6、(2)VCBOand VCEXVCEOTJand TSTGVEBOIBICW W C/W V dc V dc C V dc A dc A dc 2N6676, 2N6676T1 6 175 1.0 450 300 -65 to +200 8.0 5 15 2N6678, 2N6678T1 6 175 1.0 650 400 -65 to +200 8.0 5 15 2N6676T3 4 (3) 125 1.3 450 300 -65 to +200 8.0 5 15 2N6678T3 4 (3) 125 1.3 650 400 -65 to +200 8.0 5 15 2N6691 6 175

7、 1.0 450 300 -65 to +200 8.0 5 15 2N6693 6 175 1.0 650 400 -65 to +200 8.0 5 15 (1) See figures 6 and 7 for temperature-power derating curves. (2) See figures 8 through 11, thermal impedance curves. (3) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1

8、.3C/W only. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the curren

9、cy of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 13 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

10、ense from IHS-,-,-MIL-PRF-19500/538G 2 1.4 Primary electrical characteristics at TC= +25C. hFE1 hFE2 VBE(sat)VCE(sat)Limits VCE= 3 V dc IC= 1 A dc (1) VCE= 3 V dc IC= 15 A dc (1) IC= 15 A dc IB= 3 A dc IC= 15 A dc IB= 3 A dc V dc V dc Min Max 15 40 8 20 1.5 1.0 |hfe| Cobo Switching (2) Limits VCE= 1

11、0 V dc IC= 1 A dc f = 5 MHz VCB= 10 V dc IE= 0 100 KHz f 1 MHz tc td tr ts tf pF s s s s s Min Max 3 10 150 500 0.5 0.1 0.6 2.5 0.5 (1) Pulsed (see 4.5.1). (2) See figure 12 (pulse response circuits). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections

12、 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must mee

13、t all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent sp

14、ecified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconduct

15、or Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the cont

16、ract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo

17、 reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/538G 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD 4. These dimensions shall be measured at points .050 inch (1.27 mm)

18、 to .055 inch (1.40 mm) below seating plane. Measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1and LL. Diameter is uncontro

19、lled in L1. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-3) for 2N6676 and 2N6678. Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 22.22 3 CH .270 .380 6.86 9.65 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .060

20、.135 1.52 3.43 L1.050 1.27 5, 9 LD .038 .043 0.97 1.09 5, 9 LL .312 .500 7.92 12.70 5 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1.205 .225 5.21 5.72 4, 5 S1.655 0.675 16.64 17.14 4 TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted with

21、out license from IHS-,-,-MIL-PRF-19500/538G 4 NOTES: 1. Dimensions are in inches, millimeters are given for general information only. 2. See NSB Handbook H28, “Screw-Thread Standards for Federal Services”. 3. The orientation of the terminals in relation to the hex flats is not controlled. 4. All thr

22、ee terminals. 5. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of the stud. 6. Terminal spacing measured at the base seat only. 7. This dimension applies to the location of the center line of the terminals. 8. Terminal - 1, emitter; terminal - 2, base;

23、 terminal - 3, collector. All leads are isolated from the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions (TO-61) for 2N6691 and 2N6693. Dimension Ltr Inches Millimeters Notes Min Max Min Max A1.270 6.86 CD .570 .610 14.48 15.49 CD1.610

24、 .687 15.49 17.45 CH .325 .460 8.26 11.68 HF .667 .687 16.94 17.45 HT .090 .150 2.29 3.81 OAH .640 .875 16.26 22.22 4 PS .340 .415 8.64 10.54 3, 6 PS1.170 .213 4.32 5.41 3, 6 SL .422 .455 10.72 11.56 SU .090 2.29 7 T .047 .072 1.19 1.83 T1 .046 .077 1.17 1.96 UD .220 .249 5.59 6.32 TO-61 Provided by

25、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/538G 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Methods used for electrical isolation of the terminals feedthroughs shall employ materials that co

26、ntain a minimum of 90 percent AL2O3 (ceramic). 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Dimensions and configuration for 2N6676T1 and 2N6678T1 (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .

27、545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter TO-2

28、54 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/538G 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Methods used for electrical isolation of the terminals feedthroughs shall employ mat

29、erials that contain a minimum of 90 percent AL2O3 (ceramic). 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Dimensions and configuration for 2N6676T3 and 2N6678T3 (TO-257AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .20

30、0 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Emitter 1 TO-257 Provided by IHSNot for

31、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/538G 7 Ltr. Dimensions Inch Millimeters Min Max Min Max A, C .205 .215 5.21 5.46 DESIGN DATA Metalization: Top: Aluminum 54,000 minimum, 60,000 nominal. Back: Al/Ti/Ni/Au 10,000 minimum, 12,500 nominal. Back si

32、de: Collector. Chip thickness: .012 inch (0.305 mm) .002 inch (0.051 mm). Bonding pad: B = .018 inch (0.46 mm) x .040 (1.02 mm). E = .018 inch (0.46 mm) x .040 (1.02 mm). * FIGURE 5. JANHCA and JANKCA (A version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

33、thout license from IHS-,-,-MIL-PRF-19500/538G 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authori

34、zed by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: VCEX- Colle

35、ctor cutoff voltage (dc) with specified circuit between base and emitter. RISO- Resistance between device case and leads 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N

36、6693; figure 3 (TO-254AA) - 2N6678T1, 2N6676T1, and figure 4 (TO-257AA) - 2N6676T3 and 2N6678T3 herein, and figure 5. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see

37、6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test l

38、evels shall be as defined in MIL-PRF-19500. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.7 Electrical p

39、erformance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shal

40、l be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspectio

41、n (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, and III). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/538G 9 4.2 Qualification inspection. Qualification inspection shall be in accordance with

42、 MIL-PRF-19500, and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was a

43、warded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screen

44、ing. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurements of MIL-PRF-19500)

45、 JANS JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.1) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.1) 9 ICEX1and hFE2ICEX1and hFE211 ICEX1and hFE2ICEX1= 100 percent of initial value or 500 nA dc, whichever is greater; hFE2= 15 percent of initial val

46、ue. ICEX1and hFE2ICEX1= 100 percent of initial value or 500 nA dc, whichever is greater; hFE2= 25 percent of initial value. 12 See 4.3.2 See 4.3.2 13 Subgroup 2 and 3 of table I herein; ICEX1= 100 percent of initial value or 500 nA dc, whichever is greater; hFE2= 25 percent of initial value. Subgrou

47、p 2 of table I herein; ICEX1= 100 percent of initial value or 500 nA dc, whichever is greater; hFE2= 25 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4),

48、Endpoints: Subgroup 2 of table I herein. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. * 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 313

49、1 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. The thermal impedance limit shall comply with the thermal impedance graph on figures 8, 9, 10, and 11 (less than or equal to the curve value at the same tHtime) and shal