DLA MIL-PRF-19500 527 E-2010 SEMICONDUCTOR DEVICE DARLINGTON TRANSISTOR PNP SILICON POWER TYPES 2N6648 2N6649 AND 2N6650 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/527E 22 February 2010 SUPERSEDING MIL-PRF-19500/527D w/AMENDMENT 1 8 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER, TYPES 2N6648, 2N6649, AND 2N6650, JAN, JANTX, AND JANTXV This specification is approved for use by all Depa

2、rtments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, darlington power transistor. Three l

3、evels of product assurance are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3). 1.3 Maximum ratings unless otherwise specified TA= +25C. Types PT(1) TA= +25C PT(2) TC= +25C VCBOVCEOVEBOIBICTJand TSTGRJC2N6648 2N6649 2N6650 W 5.0 5.0 5.0 W 85 85 85 V dc -40 -60 -8

4、0 V dc -40 -60 -80 V dc -5.0 -5.0 -5.0 A dc -0.25 -0.25 -0.25 A dc -10 -10 -10 C -65 to +175 -65 to +175 -65 to +175 C/W 1.76 1.76 1.76 (1) Derate linearly 33.3 mW/C above TA +25C. (2) Derate linearly 567 mW/C above TC +25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this

5、document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at

6、https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 22 May 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 2 1.4 Primary electrical chara

7、cteristics. hFE1(1) hFE2(1) VCE(SAT)1(1) VCE(SAT)2(1) VBE(ON)1(1) VCE= -3 V dc IC= -1 A dc VCE= -3 V dc IC= -5 A dc IC= -5.0 A dc IB= -10 mA dc IC= -10 A dc IB= -0.1 A dc VCE= -3.0 V dc IC= -5.0 A dc Minimum Maximum 300 1,000 20,000 V dc -2.0 V dc -3.0 V dc -2.8 Cobo |hfe| Pulse response VCB= 10 V d

8、c IE= 0 100 kHz f 1 MHz VCE= -5.0 V dc IC= -1.0 A dc f = 1 MHz ton toff Minimum Maximum pF 300 30 400 s 2.5 s 10.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not inclu

9、de documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3,

10、 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of thes

11、e documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online

12、at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

13、text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without

14、 license from IHS-,-,-MIL-PRF-19500/527E 3 FIGURE 1. Dimensions and configuration (TO-3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 4 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .875 22.23 CH .250 .450 6.35

15、11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .050 .135 1.27 3.43 LD .038 .043 0.97 1.09 LL .312 .500 7.92 12.70 L1.050 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3 PS1.205 .225 5.21 5.72 3 s1.655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches.

16、2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001

17、inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Collector is electricall

18、y connected to the case. 7. In accordance with AMSE Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-3) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 5 3. REQUIREMENTS 3.1 G

19、eneral. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualifie

20、d manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interfa

21、ce and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5

22、 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in acco

23、rdance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements

24、specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group

25、 E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision s

26、hall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 6 * 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E

27、-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV) of Measurement MIL-PRF-19500. JANTX and JANTXV levels (1) 3c Thermal impedance (see

28、4.3.2) 7 Optional 11 ICEX1and hFE112 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE1= 25 percent of initial value. 14 Required (1) May be performed anytime before screen 9. 4.3.1 Burn-in conditions. TJ= 162.5 12.5C, 2N6648 = VCB= -

29、30 V dc, 2N6649 = VCB= -40 V dc, 2N6650 = VCB= -60 V dc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time

30、 (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table

31、 I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIb of MIL-PRF-19500 and herein Electrical measurements

32、(end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 7 * 4.4.2.1 Group B inspection, appendix E, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 Subgroup Method C

33、onditions B3 1037 For solder die attach: VCB 10 V dc, 2,000 cycles, TA 35C. B3 1026 For eutectic die attach: VCB 10 V dc, TA 35C adjust PTto achieve TJ= 150C minimum. B6 1032 TSTG= + 175C * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified fo

34、r subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 s.

35、* C5 3131 RJC= 1.76C/W. See 4.3.2 herein. C6 1037 For solder die attach: VCB 10 V dc, 6,000 cycles, TA 35C. C6 1026 For eutectic die attach: VCB 10 V dc, TA 35C adjust PTto achieve TJ= 150C minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions spe

36、cified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1

37、Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Co

38、nditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 n = 45 devices, c = 0 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Collector emitter breakdown voltage 2N6648 2N6649 2N6650 3011 Bias condition D; IC= 200 mA dc pulsed (see 4.5.1). V(BR)CEO -40 -60 -80 V dc Collector

39、- emitter breakdown voltage 2N6648 2N6649 2N6650 3011 Bias condition B; IC= 200 mA dc RBB= 100 ohms, pulsed (see 4.5.1). V(BR)CER -40 -60 -80 V dc Collector - emitter cutoff current 2N6648 3041 Bias condition D VCE= -40 V dc ICEO-1 mA dc 2N6649 VCE= -60 V dc 2N6650 VCE= -80 V dc Emitter - base cutof

40、f current 3061 Bias condition D; VEB= 5 V dc IEBO-10 mA dc Collector - emitter cutoff current 2N6648 3041 Bias condition D; VBE= 1.5 V dc VCE= -40 V dc ICEX110 A dc 2N6649 VCE= -60 V dc 2N6650 VCE= -80 V dc Collector - base cutoff current 2N6648 3036 Bias condition D VCE= -40 V dc ICBO-1 mA dc 2N664

41、9 VCE= -60 V dc 2N6650 VCE= -80 V dc See footnotesat end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/527E 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max

42、Subgroup 2 - Continued Base - emitter voltage (non- saturated) 3066 Test condition B; VCE= -3.0 V dc, IC= -5.0 A dc; pulsed (see 4.5.1) VBE(on)1-2.8 V dc Base - emitter voltage (non- saturated) 3066 Test condition B; VCE= -3.0 V dc, IC= -10 A dc; pulsed (see 4.5.1) VBE(on)2-4.5 V dc Collector - emit

43、ter saturated voltage 3071 IC= -5.0 A dc; IB= -10 mA dc VCE(sat)1-2.0 V dc Collector - emitter saturated voltage 3071 IC= -10 A dc; IB= -0.1 A dc, pulsed (see 4.5.1) VCE(sat)2-3.0 V dc Forward - current transfer ratio 3076 VCE= -3.0 V dc; IC= -1.0 A dc pulsed (see 4.5.1) hFE1300 Forward - current tr

44、ansfer ratio 3076 VCE= -3.0 V dc; IC= -5 A dc pulsed (see 4.5.1) hFE21,000 20,000 Forward - current transfer ratio 3076 VCE= -3.0 V dc; IC= -10 A dc pulsed (see 4.5.1) hFE3100 Subgroup 3 High - temperature operation: Collector to emitter cutoff current 2N6648 3041 TA= +150C Bias condition A; VBE= 1.

45、5 V dc VCE= -40 V dc ICEX2-3.0 mA dc 2N6649 VCE= -60 V dc 2N6650 VCE= -80 V dc Low - temperature operation: Forward - current transfer ratio 3076 TA= -65C VCE= -3.0 V dc IC= -5.0 A dc pulsed (see 4.5.1) hFE4200 See footnotesat end of table. Provided by IHSNot for ResaleNo reproduction or networking

46、permitted without license from IHS-,-,-MIL-PRF-19500/527E 10 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Pulse response: 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2. Tur

47、n-on time VCE= -30 V dc; IC= -5.0 A dc; IB1= -20 mA dc ton2.5 s Turn-off time VCE= -30 V dc; IC= -5.0 A dc; IB1= - IB2= 20 mA dc toff10.0 s Magnitude of small-signal short-circuit forward-current transfer ratio 3306 VCE= -5.0 V dc IC= -1.0 A dc, f = 1.0 MHz |hfe| 30 400 Open circuit output capacitan

48、ce 3236 VCB= 10 V dc, IE= 0, 100 kHZ f 1 MHz Cobo300 pF Subgroup 5 Safe operating area (continuous dc) 3051 TC= 25C; t = 1 s; 1 cycle; (see figure 3) Test 1 VCE= 8.5 V dc; IC= -10 A dc Test 2 VCE= 25 V dc; IC= -3.4 A dc Test 3 2N6648 2N6649 2N6650 VCE= -40 V dc; IC= -0.9 A dc VCE= -60 V dc; IC= -0.3 A dc VCE= -80 V dc; IC= -0.14 A dc Electrical measurements See table I, subgroup 2 Safe operating area (switching) 3053 Load condition C (unclamped inductive load) (see figure 4); TC= +25C; duty cycle 10 percent; Rs 0.1 ohms. Test 1 tp= 1 ms; (vary to obtain IC); RBB1