DLA MIL-PRF-19500 514 D-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6274 AND 2N6277 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6274 AND 2N6277, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Departm

2、ent of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for e

3、ach encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTTC= +25C (1) PTTC= +100C (1) RJC VCBOVCEOVEBOIBICTJand TSTG2N6274 2N6277 W 250 250 W 143 143 C/W 0.7 0.7 V dc 120 180 V dc 100

4、150 V dc 6 6 A dc 20 20 A dc 50 50 C -65 to +200 -65 to +200 (1) Derate linearly 1.43 W/C Between TC= +25C and TC= +200C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-399

5、0, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be c

6、ompleted by 3 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 2 1.4 Primary electrical characteristics. at TC= +25C unless otherwise specified. hFE3 (1) hFE2 (1) VBE(sat)(1) VCE(sat)(1) Switching Cobo |hfe| Types VC

7、E= 4 V dc IC= 50 A dc VCE= 4 V dc IC= 20 A dc IC= 20 A dc IB= 2 A dc IC= 20 A dc IB= 2 A dc VCB= 10 V dc IE= 0 F = 1 MHz VCE= 10 V dc IC= 1 mA dc f = 10 MHz s V dc V dc ton toff pF 2N6274 2N6277 Min 10 10 Max Min 30 30 Max 120 120 Min Max 1.8 1.8 Min Max 1.0 1.0 Max 0.5 0.5 Max 1.05 1.05 Min Max 600

8、 600 Min 3 3 Max 12 12 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional inf

9、ormation or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.

10、2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICA

11、TIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document

12、 Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing i

13、n this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 2

14、2.22 3 CH .250 .328 6.35 8.33 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 6 HT .060 .135 1.52 3.43 LD .057 .063 1.45 1.60 5, 9 LL .312 .500 7.92 12.70 4, 5, 9 L1.050 1.27 5, 9 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 PS1.205 .225 5.21 5.72 5 S1 .655 .675 16.

15、64 17.15 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measureme

16、nt shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 10. In accordance with

17、ASME Y14.5M, diameters are equivalent to x symbology. 11. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch

18、(0.15 mm) convex overall. FIGURE 1. Physical dimensions (TO-3). TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modi

19、fied herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, a

20、nd definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-3) herein. 3.4.1 Lead finish. Lead finish shall be solderab

21、le in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified

22、herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality an

23、d shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection

24、 (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to

25、 a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot fo

26、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 5 4.3 Screening. Screening shall be in accordance with MIL-PRF-19500 (table E-IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed

27、the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurements of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2). 9 Not applicable 11 ICEX1and hFE212 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 1 A dc, whic

28、hever is greater. hFE2= 25 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are TJ= +187.5C, 12.5C; VCB 20 V dc. 4.3.2 Thermal impedance.

29、 The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance ins

30、pection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with applicable inspec

31、tions of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgr

32、oup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition B3 1027 VCE 20 V dc; TJ= 187.5C, 12.5C. or B3 1037 VCB 20 V dc; TJ=between cycles +100C; ton= toff 1 minute. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

33、om IHS-,-,-MIL-PRF-19500/514D 6 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Delta measuremen

34、ts shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; time = 15 s. C5 3131 See 4.3.2, RJCshall be 0.7 C/W. C6 1026 VCE 20 V dc; TJ= 187.5C, 12.5C. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the

35、conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.5 Method of inspection. Methods of inspecti

36、on shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 7 TABL

37、E I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJX C/W Collector to emitter breakdown voltage 2N6274 2N6277 3011 Bias condition D; IC= 50 mA dc; pulsed (se

38、e 4.5.1) V(BR)CEO 100 150 V dc V dc Collector to emitter cutoff current 3041 Bias condition D ICEO50 A dc 2N6274 VCE= 50 V dc 2N6277 VCE= 75 V dc Collector to emitter cutoff current 3041 Bias condition A; VBE= -1.5 V dc ICEX1 10 A dc 2N6274 VCE= 120 V dc 2N6277 VCE= 180 V dc Emitter-base cutoff curr

39、ent 3061 Bias condition D; VEB= 6 V dc IEBO 100 A dc Collector to base cutoff current 3036 Bias condition D, ICBO 10 A dc 2N6274 VCB= 120 V dc 2N6277 VCB= 180 V dc Base emitter saturated voltage 3066 Test condition A; IC= 20 A dc; pulsed (see 4.5.1) IB= 2.0 A dc VBE(sat) 1.8 V dc Forward-current tra

40、nsfer ratio 3076 VCE= 4 V dc; IC= 1 A dc; pulsed (see 4.5.1) hFE1 50 Forward-current transfer ratio 3076 VCE= 4 V dc; IC= 20 A dc; pulsed (see 4.5.1) hFE230 120 Forward-current transfer ratio 3076 VCE= 4 V dc; IC= 50 A dc; pulsed (see 4.5.1) hFE3 10 Collector to emitter saturated voltage 3071 IC= 20

41、 A dc; pulsed (see 4.5.1) IB= 2.0 A dc VCE(sat)1 1.0 V dc Collector to emitter saturated voltage 3071 IC= 50 A dc; IB= 10 A dc; pulsed (see 4.5.1) VCE(sat)2 3.0 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

42、RF-19500/514D 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 3 High-temperature operation: Collector to emitter cutoff current 2N6274 2N6277 3041 TA= +150C Bias condition A; VBE= -1.5 V dc VCE= 120 V dc VCE= 180 V dc ICEX21.0

43、 mA dc Low-temperature operation : Forward-current transfer ratio 3076 TA= -55C VCE= 4.0 V dc; IC= 20 A dc; pulsed (see 4.5.1) hFE4 10 Subgroup 4 Pulse response: 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2 herein. Turn-on time VCC= 80 V dc; IC= 20 A

44、dc; IB= 2.0 A dc ton 0.5 s Turn-off time VCC= 80 V dc; IC= 20 A dc; IB1= IB2 = 2.0 A dc toff 1.05 s Magnitude of common emitter small-signal short- circuit forward- current transfer ratio 3306 VCE= 10 V dc; IC= 1 mA dc; f = 10 MHz |hfe| 3 12 Open capacitance (open circuit) 3236 VCB= 10 V dc; IE= 0;

45、f = 1.0 MHz Cobo 600 pF Subgroup 5 Safe operating area (dc operation) 3051 TC= +25C; t = 1 s; 1 cycle; (See figure 3) Test 1 VCE= 5 V dc; IC= 50 A dc Test 2 VCE= 86 V dc; IC= 165 mA dc Test 3 2N6274 VCE= 8 V dc; IC= 29 A dc Test 4 2N6277 VCE= 120 V dc; IC= 110 mA dc See footnotes at end of table. Pr

46、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/514D 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 5 - Continued Safe operating area (switching) 3053 Load conditi

47、on C, (unclamped inductive load) (see figure 4) TC= + 25C; duty cycle 10 percent; Rs= 0.1 ohms; tr= tf 500 ns Test 1 tp approximately 5 ms (vary to obtain IC); RBB1= 2 ohms; VBB1=12 V dc; RBB2= ; VBB2= 0 V; IC= 40 A dc; VCC= 50 V dc; L = 100 H; (4 each Miller type 7827 in parallel, 40 A), 0.04 ohm,

48、or equivalent) Test 2 tp approximately 5 ms (vary to obtain IC;) RBB1= 120ohms; VBB1=12 V dc; RBB2= ; VBB2= 0 V; VCC= 50 V dc; IC= 850 mA dc; L = 100 H; (= 80 + 20 mH 2 each Traid Transformer C-48u, in series), 0.713 ohm, or equivalent Safe operating area (switching) 2N6274 2N6277 Electrical measurements 3053 Clamped inductive load TA= + 25C; duty cycle 5 percent; tpapproximately 1.5 ms (vary to obtain IC) VCC=50 V dc; IC= 50 A dc; VBB1=12 V dc; VBB2= 1.5 V; RBB1= 2 ohms; RBB2= 100 ohms; Rs 0.1 ohms; L = 370 H (Miller 7827 or equivalent) (see figure 5) Clamp voltage = 100 V dc Clam