DLA MIL-PRF-19500 496 E-2010 SEMICONDUCTOR DEVICE DUAL TRANSISTOR PNP SILICON UNITIZED TYPES 2N5795 2N5796 2N5796U 2N5796UC 2N5795A 2N5796A 2N5796AU AND 2N5796AUC JAN JANS JANSM JAD.pdf

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1、 MIL-PRF-19500/496E 1 June 2010 SUPERSEDING MIL-PRF-19500/496D 25 March 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, PNP, SILICON, UNITIZED, TYPES 2N5795, 2N5796, 2N5796U, 2N5796UC, 2N5795A, 2N5796A, 2N5796AU, AND 2N5796AUC, JAN, JANS, JANSM, JANSD, JANSP, JANSL, JANSR

2、, JANSF, JANSG, JANSH, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specificatio

3、n covers the performance requirements for two electrically isolated, unmatched PNP silicon transistors as one dual unit for HI-speed saturated switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness a

4、ssurance (RHA) to two radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to

5、 TO-78), 2, and 3 (surface mount U and UC). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. PT(1) (2) TA= +25C ICVCBOVCEOVEBOTJand TSTGOne section Total device W W mA dc V dc V dc V dc C 0.5 0.6 600 60 60 5.0 -65 to +175 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions

6、 on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online dat

7、abase at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 2 * 1.3 Maximum

8、ratings. Unless otherwise specified, TA= +25C. Continued. Types RJA One section RJABoth sections RJSP One section RJSPBoth sections RJPCB One section RJPCBBoth sections C/W (2) (3) C/W (2) (3) C/W (2) (3) C/W (2) (3) C/W (2) (3) C/W (2) (3) 2N5795, 2N5796 2N5795A, 2N5796A 2N5796U, 2N5796UC 2N5796AU,

9、 2N5796AUC 350 350 290 290 110 110 90 90 350 350 290 290 (1) For TA 25C, derate linearly 2.86 mW/C one section, 3.43 mW/C total. (2) For 2N5795, 2N5795A, 2N5796, 2N5796A, 2N5796U, 2N5796AUC, and 2N5796UC devices. * (3) For themal impedance cures see figures 4, 5, and 6. * 1.4 Primary electrical char

10、acteristics. Unless otherwise specified, TA= +25C. Cobo VCB= 10 V dc IE= 0 100 kHz f 1 MHz |hfe| VCE= 20 V dc IC= 20 mA dc f = 100 MHz Switching tontoffpF ns ns Minimum Maximum 8.0 2.0 10.0 50 140 Limits hFE1hFE4(1) VCE(SAT)1(1) VCE(SAT)2(1) VBE(SAT)1(1) VCE= 10 V dc IC= 100 A dc VCE= 10 V dc IC= 15

11、0 mA dc IC= 150 mA dc IB= 15 mA dc IC= 500 ma dc IB= 50 mA dc IC= 150 mA dc IB= 15 mA dc Min Max Min Max V dc V dc V dc 2N5795, 2N5795A 2N5796, U, UC 2N5796A, AUC 40 75 40 100 150 300 0.4 0.4 1.6 1.6 1.3 1.3 (1) Pulsed see 4.5.1. * 1.5 Primary electrical matching characteristics of each individual s

12、ection. Limit hhFEFE2 12 22313FEFEhh| VBE1- VBE2| 2N5795A 2N5796A, UA, AUC VCE= 10 V dc; IC= 1 mA dc (1) VCE= 10 V dc; IC= 10 mA dc (1) VCE= 10 V dc; IC= 1 mA dc Min Max 0.9 1.1 0.9 1.1 mV dc 10 (1) The larger number will be replaced in the denominator Provided by IHSNot for ResaleNo reproduction or

13、 networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .335 .370 8.51 9.40 CD1.305 .335 7.75 8.51 CH .150 .185 3.81 4.70 LD .016 .021 0.41 0.53 LC .200 BSC 5.08 BSC 4 LC1.100 BSC 2.54 BSC 4 LL .500 12.70 TW .028 .034 0.71

14、 0.86 TL .029 .045 0.74 1.14 3 OL 45 BSC 45 BSC 6 N .100 BSC 2.54 BSC NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Measured from maximum diameter of the product. 4. Leads having maximum diameter .019 inch (0.483 mm) measured in gaging plan .054 inch (1

15、.37 mm) + .001 inch (0.025 mm) - .000 inch (0.000 mm) below the seating plane of the product shall be within .007 inch (.178 mm) of their true position relative to a maximum width tab. 5. The product may be measured by direct methods or by gauge. 6. Tab centerline. 7. In accordance with ASME Y14.5M,

16、 diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for 2N5795 and 2N5796 (TO-78). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 4 Dimensions Dimensions Symbol Inches Millimeters Symbol Inches Millimeters Min

17、Max Min Max Min Max Min Max BL .240 .250 6.10 6.35 LL1 .060 .070 1.52 1.78 BL2 .250 6.35 LL2 .082 .098 2.08 2.49 BW .165 .175 4.19 4.45 LS1.095 .105 2.41 2.67 BW2 .175 4.45 LS2.045 .055 1.14 1.40 CH .058 .100 1.47 2.54 LW .022 .028 0.56 0.71 L3 .003 .007 0.08 0.18 LW2 .006 .022 0.15 0.56 LH .026 .03

18、9 0.66 0.99 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ controls the overall package thickness. 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturers option from that shown on the drawing. 5. Dimensions “LW2“

19、minimum and “L3“ minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “LW2“ maximum and “L3

20、“ maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, 2N5796U. Provided by IHSNot fo

21、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 5 Dimensions Dimensions Symbol Inches Millimeters Symbol Inches Millimeters Min Max Min Max Min Max Min Max BL .240 .250 6.10 6.35 LL1 .060 .070 1.52 1.78 BL2 .250 6.35 LL2 .082 .098 2.08 2.49 BW .165 .17

22、5 4.19 4.45 LS1.095 .105 2.41 2.67 BW2 .175 4.45 LS2.045 .055 1.14 1.40 CH .058 .115 1.47 2.92 LW .022 .028 0.56 0.71 L3 .003 .007 0.08 0.18 LW2 .006 .022 0.15 0.56 LH .026 .039 0.66 0.99 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ con

23、trols the overall package thickness and is ceramic. 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturers option from that shown on the drawing. 5. Dimensions “LW2“ minimum and “L3“ minimum and the appropriate castellation length define an unobstructed three-dimensional spa

24、ce traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “LW2“ maximum and “L3“ maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of

25、these dimensions may be made prior to solder dipping. 6. Lead 4 = collector. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, 2N5796UC and 2N5796AUC (ceramic lid). Provided by IHSNot for ResaleNo reproduction or networking permitted without

26、 license from IHS-,-,-MIL-PRF-19500/496E 6 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional informa

27、tion or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1

28、Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION

29、S MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardizat

30、ion Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence.

31、 Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this s

32、pecification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used h

33、erein shall be as specified in MIL-PRF-19500 and as follows. RJA. Thermal resistance junction to ambient. RJC. Thermal resistance junction to case. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (similar to TO-78), 2,

34、and 3 (U, UC, and AUC) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardne

35、ss assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, 1.5 and table I. Provided by IHSNot for ResaleNo r

36、eproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 7 3.7 Electrical test requirements. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, 1.5 and table I herein. 3.8 Marking. Marking shall be in accordance with

37、 MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviatio

38、n required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified here

39、in are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualifica

40、tion. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the pri

41、or revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/496E 8 4.3 Screening (list applicable JANS, JANTX, and JANTXV levels). Screening shal

42、l be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and

43、 JANTXV levels (1) 3c Thermal impedance method 3131 of MIL-STD-750 (see 4.3.2) Thermal impedance method 3131 of MIL-STD-750 (see 4.3.2) 9 ICBO2 and hFE4Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2 and hFE4Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, w

44、hichever is greater. hFE4= 15 percent of initial value ICBO2and hFE412 See 4.3.1 See 4.3.1 13 Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater. hFE4= 15 percent of initial value Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 n

45、A dc, whichever is greater. hFE4= 15 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Burn-in conditions. Burn-in conditions are as follows: VCB= 10 - 30 V dc; power shall be applied to ach

46、ieve TJ= +135C minimum using PT= 300 mW each section (600 mW total device). TA= ambient rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used. A justification demonstratin

47、g equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval.4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the gui

48、delines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate sc

49、reening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroup 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is performed