DLA MIL-PRF-19500 488 E-2008 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N5671 AND 2N5672 JAN JANTX JANTXV AND JANS.pdf
《DLA MIL-PRF-19500 488 E-2008 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N5671 AND 2N5672 JAN JANTX JANTXV AND JANS.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 488 E-2008 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N5671 AND 2N5672 JAN JANTX JANTXV AND JANS.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/488E 9 December 2008 SUPERSEDING MIL-PRF-19500/488D 1 May 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5671 AND 2N5672, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of th
2、e Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are
3、provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PT(1) TA= +25C PT(2) TC= +25C RJC VCBOVCEOVEBOICIBTSTGand TJ2N5671 2N5672 W 6.0 6.0 W 140 140 C/W 1.25 1.25 V dc 120
4、150 V dc 90 120 V dc 7.0 7.0 A dc 30 30 A dc 10 10 C -65 to +200 (1) Derate linearly 34.2 mW/C for TA +25C. (2) Derate linearly 800 mW/C for TC +25C. 1.4 Primary electrical characteristics at TA = +25C. Pulse response Limits hFE1VCE= 2.0 V dc IC= 15 A dc VCE(sat)1IC= 15 A dc IB= 1.2 A dc Cobo100 kHz
5、 10 s; RS= 0.1 ohm; RBB1= 1; VBB1= 10 V dc max; RBB2= 20; VBB2= 4 V dc; IC= 30 A dc; VCC= 90 V dc (2N5671) and 120 V dc (2N5672); RL 3.0 (2N5671), 4.0 (2N5672); L = 50 H, 0.1 ; CR = 1N1186A; Clamp voltage = 90 V dc +0, -5 (2N5671); 120 V dc +0, -5 (2N5672). Device fails if clamp voltage is not reach
6、ed. Electrical measurements See table I, subgroup 2 herein Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3, 4, and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group
7、C, subgroup 2 and 6. Group E, subgroup 1. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/488E 11 * TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only. Inspection MIL-STD-750 Sample Method Con
8、ditions plan Subgroup 1 45 devices c = 0 Temperature cycling (air to air) 1051 Test condition C, 500 cycles. Hermetic seal 1071 Fine leak Gross leak Test conditions G or H. Test conditions C or D. Electrical measurements See table I, subgroup 2. Subgroup 2 45 devices c = 0 Blocking life 1048 Test te
9、mperature = +125C; VCB= 80 percent of rated; T = 1,000 hours. Electrical measurements See table I, subgroup 2. Subgroup 4 Thermal impedance curves See MIL-PRF-19500. Sample size N/A Subgroup 8 Reverse stability 1033 Condition B. 45 devices c = 0 Provided by IHSNot for ResaleNo reproduction or networ
10、king permitted without license from IHS-,-,-MIL-PRF-19500/488E 12 FIGURE 2. Safe operating area for switching between saturation and cutoff (unclamped inductive load). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/488E 13 NOTE: V(BR)C
11、EQ, V(BR)CER, V(BR)CEX, is acceptable when the trace falls to the right and above point “A“ for type 2N5671. The trace shall fall to the right and above point “B“ for type 2N5672. FIGURE 3. V(BR)CEO, V(BR)CER, V(BR)CEX, measurement circuit. Provided by IHSNot for ResaleNo reproduction or networking
12、permitted without license from IHS-,-,-MIL-PRF-19500/488E 14 NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each 20 ns; duty cycle 2 percent; generator source impedance shall be 50 ohms; pulse width = 20 s. 2. Output sampling oscilloscope: Zin 100 k; Cin 50 pF; rise ti
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLAMILPRF19500488E2008SEMICONDUCTORDEVICETRANSISTORNPNSILICONHIGHPOWERTYPES2N5671AND2N5672JANJANTXJANTXVANDJANSPDF

链接地址:http://www.mydoc123.com/p-692356.html