DLA MIL-PRF-19500 486 H-2011 COUPLER OPTO ELECTRONIC SEMICONDUCTOR DEVICE SOLID STATE TYPES 4N22 4N22A 4N23 4N23A 4N24 4N24A 4N22U 4N23U AND 4N24U JAN JANTX JANTXV AND JANS.pdf

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1、MIL-PRF-19500/486H 9 December 2011 SUPERSEDING MIL-PRF-19500/486G w/AMENDMENT 1 3 September 2010 PERFORMANCE SPECIFICATION SHEET COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, TYPES 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, 4N22U, 4N23U, AND 4N24U, JAN, JANTX, JANTXV, AND JANS This specif

2、ication is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for solid stat

3、e optically coupled isolators in which a gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product assurance are provided for each type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (4N22, 4N22A, 4N23, 4N23A, 4N2

4、4, and 4N24A) (TO-78) and figure 2 (4N22U, 4N23U, and 4N24U). 1.3 Maximum ratings. Unless otherwise specified, maximum ratings apply to all case outlines, TA= +25C. 1.3.1 Infrared-emitting diode maximum rating. VRIF(1) (2) IP(3) V dc mA dc A (pk) 2 40 1 (1) Derate linearly to 125C by 0.67 mA/C above

5、 +65C. (2) Minimum recommended operating IFis 2 mA dc at +25C. (3) 1.0 s pulse width, 300 pps. 1.3.2 Phototransistor maximum rating. PT(1) ICmW mA dc 300 50 (1) Derate linearly to 125C at 3 mW/C above +25C. AMSC N/A FSC 5980 INCH-POUND * Comments, suggestions, or questions on this document should be

6、 addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The docum

7、entation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 2 1.3.3 Total device ratings. TOPTSTGVIOC C V dc -55C to 125C -65

8、 to +125 1,000 V (max) 1.4 Primary electrical characteristics. Unless otherwise specified, electrical characteristics apply to all case outlines, TA= +25C. 1.4.1 LED (input) characteristics. Limits IRVR= 2 V dc VF1IF= 10 mA dc A dc V dc Minimum 0.8 Maximum 100 1.5 1.4.2 Phototransistor (output) char

9、acteristics. Limits IC(OFF)VCE= 20 V dc V(BR)CEOIC= 1 mA dc V(BR)CBOIC= 100 A dc V(BR)EBOIE= 100 A dc hFEVCE= 5V dc IC= 10 mA dc 4N22 4N22A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U Min Max nA 100 V dc 40 V dc 45 V dc 7 100 100 100 Provided by IHSNot for ResaleNo reproduction or networking permitted w

10、ithout license from IHS-,-,-MIL-PRF-19500/486H 3 1.4.3. Coupled (transfer) characteristics. Limits RIO at 1,000 V see 4.5.5 CIOV = 0, f = 1 MHz see 4.5.5 Phototransistor mode switching (see figure 3) Photodiode mode switching (see figure 3) trtf4N22 4N22A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U 4N22

11、 4N22A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U Minimum Maximum Ohms 1011pF 5 s 15 s 15 s 15 s 15 s 15 s 15 s 3 s 3 Limits VCE(SAT)IF= 20mA IC(ON)1IF= 2.0mA VCE= 5 V IC(ON)2IF= 10mA VCE= 5 V 4N22 4N22A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U 4N22 4N22A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U 4N22 4N2

12、2A 4N22U 4N23 4N23A 4N23U 4N24 4N24A 4N24U IC= 2.5 mA IC= 5 mA IC= 10 mA V dc V dc V dc mA dc mA dc mA dc mA dc mA dc mA dc Minimum Maximum 0.3 0.3 0.3 .15 .20 .40 2.5 6.0 10.0 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 4 Ltr

13、Dimensions Notes Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .155 .185 3.94 4.70 HD .335 .370 8.51 9.40 HT .040 1.02 LC .200 T.P. 5.08 T.P. 3 LC1.100 T.P. 2.54 T.P. 3 LD .016 .019 0.41 0.48 LL .500 .600 12.70 15.24 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 45 T.P. 45 T.P. NOTES:

14、 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. T.P. designates true position. Leads having maximum diameter .019 inch (0.48 mm) measured in gauging plane .054 inch +.001, -.000 (1.37 mm +0.03, -0.00 mm) below the seating plane of the device shall be within .0

15、07 inch (0.18 mm) of their true position relative to a maximum width tab. 4. Device types 4N22, 4N23, and 4N24 have the collector internally connected to the case. 5. Device types 4N22A, 4N23A, and 4N24A have the collector isolated from the case. 6. In accordance with ASME Y14.5M, diameters are equi

16、valent to x symbology. FIGURE 1. Physical dimensions (4N22, 4N22A, 4N23, 4N23A, 4N24, and 4N24A) (TO-78). TO- 78 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 5 Ltr Dimensions Inches Millimeters Min Max Min Max BL .240 .250 6.10

17、6.35 BL2 .250 6.35 BW .165 .175 4.19 4.44 BW2 .175 4.44 CH .066 .080 1.68 2.03 LH .036 .044 0.91 1.12 LL1 .060 .070 1.52 1.78 LL2 .082 .098 2.08 2.49 L3 .003 .007 0.08 0.18 LS1 .095 .105 2.41 2.67 LS2 .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2 .006 .022 0.15 0.56 NOTES: 1. Dimensions are in inch

18、es. 2. Millimeters are given for general information only. 3. Ceramic package. Due to the design of this case, the collector cannot be connected to the case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration (4N22U, 4N23U, and 4N24U).

19、U Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 6 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited

20、 in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this s

21、pecification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are th

22、ose cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. MIL-STD-883 - Test Methods Standard Microcircuits. (Copies of these

23、documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the ev

24、ent of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual it

25、em requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list befo

26、re contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IC(OFF) Off-state collector current. IC(ON) On-state collector current. IPPeak forward pulse current. RIOInput

27、to output resistance. VIOInput to output voltage. VISO Isolation voltage 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (TO-78) and 2 (surface mount) herein. With the approval of the qualifying activity, the use of o

28、rganic material is authorized. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 7 3.4.1 Lead finish for 4N22, 4N22A, 4N23, 4N23A, 4N24, and 4N24A. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and he

29、rein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Lead finish for 4N22U, 4N23U, and 4N24U. Terminal pad shall be tungsten co-fired to the ceramic package. Terminal pad finish shall be gold plated or solder dipped. Where a choice of lea

30、d finish is desired, it shall be specified in the acquisition document (6.2). 3.4.3 Die shear. Die shear process control for eutectic alloyed die of less than 1.5 X 10-5square inches of surface area shall be in accordance with the requirements for small area die in method 2019 of MIL-STD-883. Die sh

31、ear is not required on the light emitting diode. * 3.4.4 Moisture content. The internal moisture content of the device package shall not exceed 10,000 ppm at +100C. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified

32、herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in qua

33、lity and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance

34、 inspection (see 4.4 and table I and table II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualificati

35、on was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. Group E qualification by extension may be granted fo

36、r this specification if the qualifying activity determines it is structurally identical to other qualified devices. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 8 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening sh

37、all be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX

38、and JANTXV level 3a See 4.3.1 See 4.3.1 3b and 3c Not applicable Not applicable 9 IC(OFF)1and hFE; 100 percent read and record IC(OFF)1and hFE; 100 percent read and record 10 See 4.3.2 See 4.3.2 11 IR, IC(OFF)1, hFE, and IC(ON)2; IC(OFF)1= 100 percent of initial value or 25 nA dc (whichever is great

39、er) hFE 20 percent of initial readingIR, IC(OFF)1, hFE, and IC(ON)2; IC(OFF)1= 100 percent of initial value or 25 nA dc ( whichever is greater) hFE 20 percent of initial reading12 See 4.3.3 See 4.3.3 13 Subgroups 2 and 3 of table I herein; IC(OFF)1= 100 percent of initial value or 25 nA dc, (whichev

40、er is greater) hFE= 20 percent of initial reading; IC(ON)2= 25 percent of initial reading; IR100 percent of initial value or 25 A dc, (whichever is greater) Subgroup 2 of table I herein; IC(OFF)1= 100 percent of initial value or 25 nA dc (whichever is greater) hFE= 20 percent of initial reading; IC(

41、ON)2= 25 percent of initial reading IR100 percent of initial value or 25 A dc ( whichever is greater) 4.3.1 Temperature cycling. All devices shall be subjected to temperature cycling in accordance with method 1051 of MIL-STD-750, test condition B, except T(min)= -55C; 10 cycles, 15 minutes minimum d

42、well. 4.3.1.1 Monitored temperature cycling. One cycle of monitored temperature cycling shall be performed on 100 percent of the devices. This test shall be performed any time after the completion of the thermal shock test specified or it may be the last of the ten thermal cycles. The monitored temp

43、erature cycle is exempt from the ramp rate and time to temperature requirements in Method 1051 of MIL-STD-750 to allow for the increased thermal mass of the support circuitry. All junctions shall be monitored for electrical continuity. Any discontinuity shall be cause for rejection of the device(s)

44、under test. If 10 percent or more of the number of devices subjected to monitored temperature cycling fail, the entire lot shall be rejected as any JAN quality level. 4.3.2 High temperature reverse bias (HTRB). All devices shall be subjected to high temperature reverse bias in accordance with method

45、 1039 of MIL-STD-750, test condition A, TA= +125C, IF= 0, VCB= 36 V dc for 48 hours minimum. 4.3.3 Power burn-in conditions. Power burn-in conditions are as follows: See figure 4 for burn-in circuit. VCC= 20 V dc, VCE= 10 5 V dc, IF= 40 mA dc, PT= 275 25 mW at TA= +25C 3C. No heat sink or forced air

46、 cooling directly on the devices shall be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/486H 9 4.4.1 Grou

47、p A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.1.1. Multiple Device Type Processing and Binning: The manufacturer may process structurally identical JAN JANTX or JANTXV devices from lots as a single intergral part number and segregate i

48、nto specific part numbers at the conclusion of group A testing. When devices are processed using the MIL-PRF-19500 standard flow, each part number in the assembly lot must separately complete group A. When devices are processed using an alternate flow, the initial group A may be performed on a sample of randomly selected devices from each assembly lot that comprises the inspection lot through the use of a worst case or binning test. Each appropriate part number selected from the initial group A shall complete a final group testing (A1, A2, and B1) by individual part number. Qualification by