DLA MIL-PRF-19500 411 P-2013 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER FAST RECOVERY 1N5415 THROUGH 1N5420 1N5415US THROUGH 1N5420US JAN JANTX JANTXV JANS JANTXVM JANTXVD .pdf

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1、 MIL-PRF-19500/411P 15 August 2013 SUPERSEDING MIL-PRF-19500/411N 17 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANS

2、M, JANSD, JANSR, AND JANSH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the p

3、erformance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level d

4、esignators “M“, “D“, “R“, and “H“ are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (axial lead) and figure 2 (surface mount). * 1.3 Maximum ratings. Unless otherwise specified, TA= 25C. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5

5、Col. 6 Col. 7 Col. 8 Col. 9 Col. 10 Col. 11 Types VBRVRWMIO(1) TA= 55C (2) (3) IOTA= 100C (2) (3) IFSMIO= 2 A dc TA= 55C tp= 8.3 ms trrTSTG and TJ RJLat L = .375 in. (9.53 mm) (4) RJECat L = 0 for US versions (5) RJX(3) V dc V (pk) A dc A dc A (pk) ns C C/W C/W C/W 1N5415, US 1N5416, US 1N5417, US 1

6、N5418, US 1N5419, US 1N5420, US 50 100 200 400 500 600 50 100 200 400 500 600 3 3 3 3 3 3 2 2 2 2 2 2 80 80 80 80 80 80 150 150 150 150 250 400 -65 to +175 22 22 22 22 22 22 6.5 6.5 6.5 6.5 6.5 6.5 43 43 43 43 43 43 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or que

7、stions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https

8、:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/411P 2 * 1.3 Maximum ratings Continued.

9、(1) Derate linearly at 22 mA/C for 55C TA 100C. (2) Derate linearly at 26.7 mA/C for 100C TA 175C. (3) For the 3A rating at 55C ambient and the 2A rating at 100C ambient, these IOratings are for a thermally mounting methods (PC boards or other) where the lead or end-cap temperatures cannot be mainta

10、ined and where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX) in 1.3 is not exceeded. This equates to RJX 43C/W in col. 11 of 1.3. Also see application notes in 6.4. * (4) See figure 3. * (5) See figure 4. 2. APPLICABLE DOCUMENTS 2.1 General. The doc

11、uments listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of thi

12、s list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and

13、handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFEN

14、SE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of pr

15、ecedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempt

16、ion has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying act

17、ivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: EC End-cap. 3.4 Interface and physic

18、al dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (axial lead) and figure 2 (surface mount) herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/411P 3 Symbol Dimensions Notes

19、 Inches Millimeters Min Max Min Max BD .110 .180 2.79 4.57 3 LD .036 .042 0.91 1.07 4 BL .130 .260 3.30 6.60 4 LL .90 1.30 22.9 33.0 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. The

20、 BL dimension shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. In accordance with ASME Y14.5M, diameter

21、s are equivalent to x symbology. FIGURE 1. Physical dimensions (axial lead). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/411P 4 Symbol Dimension Inches Millimeters Min Max Min Max BL .200 .225 5.080 5.72 ECT .019 .028 0.48 0.71 S .0

22、03 0.08 BD .137 .148 3.48 3.76 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivale

23、nt to x symbology. FIGURE 2. Physical dimensions of surface mount family. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/411P 5 3.4.1 Lead finish. Unless otherwise specified, lead or end-cap finish shall be solderable in accordance wit

24、h MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is limited to +175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be constructed util

25、izing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with the requirements of category I in MIL-PRF-19500. 3.5 Marking. Devices shall be marked in accordance with MIL-P

26、RF-19500. 3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a c

27、ontrasting color band to denote the cathode end. Alternately for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 3.5.3 Radiation hardness assurance (RHA). Radiation hardness as

28、surance requirements, part number designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.7 Electrical test requirements.

29、 The electrical test requirements shall be the subgroups specified in table I herein. 3.7.1 Post-irradiation performance characteristics. The electrical performance characteristics of the RHA devices are as specified in 4.4.4 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such

30、a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screeni

31、ng (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Qualification for radiation hardness assurance. Qualification inspection for radiation hardness assured JANS and JANTXV d

32、evices shall consist of group D examinations and tests specified in table II herein. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request th

33、e performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

34、 IHS-,-,-MIL-PRF-19500/411P 6 * 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits

35、 of table I herein shall not be acceptable. Screening (see appendix E, table E-IV of MIL-PRF-19500) JANS level JANTXV and JANTX level 2 Optional Not required (1) 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 IR1and VF1Not required 10 Method 1038 of MIL-STD-750, condition A Method

36、1038 of MIL-STD-750, condition A (2) 11 IR1and VF1; IR1 100 percent of initial reading or 250 nA dc, whichever is greater; VF1 0.1 V dc IR1and VF112 Required, see 4.3.2 Required, see 4.3.2 (2) (3) 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial value or 250 nA dc, whichever is gre

37、ater; VF1 0.1 V dc, scope display evaluation (see 4.5.2) Subgroup 2 of table I herein; IR1 100 percent of initial value or 250 nA dc, whichever is greater; VF1 0.1 V dc, scope display evaluation (see 4.5.2) 15 Required Not required 16 Required Not required (1) Thermal impedance shall be performed an

38、y time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. * (2) For JANTX and JANTXV devices, VF1may be omitted if thermal impedance is performed, unless irradiation is used to reduce the carrier lifetime. (3) ZJXis not requ

39、ired in screen 13, if already previously performed. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tHshall be 10 ms, tMDshall be 70 s maximum. The thermal impedan

40、ce limit shall comply with the thermal impedance graphs herein (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3101. See table III, subgroup 4 herein. 4.3.2 Power burn-in conditions. Power burn-i

41、n conditions are as follows: IO= 3A minimum; TA= 55C maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Use method 3100 of MIL-STD-750 to measure TJ. Adjust IOor TAto achieve the required TJ. TJ= 135C minimum. With approval of the qualifying activity, alternate burn

42、-in criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approva

43、l. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The ZJXend-point shall be derived by the supplier and approve

44、d by the qualifying activity. This ZJXend-point shall be documented in the qualification report. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/411P 7 * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance

45、with the tests and conditions specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be as specified in table IV her

46、ein. 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall be at the test conditions of the original sample. Subgroup Method Condition B3 4066 IFSM= rated IFSM(see col. 6 of 1.3); ten surges of 8.3 ms each at 1 minute intervals,

47、superimposed on IO= 2 A dc, VRWM= rated VRWM(see col. 3 of 1.3). B4 1037 Adjust IOto achieve the required TJ,apply (see col. 5 of 1.3), VR= rated VRWM(see col. 3 of 1.3 and 4.5.3); 2,000 cycles. B5 1027 IO= 3 A minimum (see col. 4 of 1.3); apply VR= rated VRWM(see col. 3 of 1.3 and 4.5.3) adjust IOo

48、r TAto achieve TJ= 175C minimum; f = 50 - 60 Hz; n = 45 c = 0. t = 1,000 hours; TA= 55C max. For irradiated devices, include trras an end-point measurement. B8 4065 Peak reverse power. PRM 636 W for square wave in accordance with test method 4065 of MIL-STD-750 (PRM 1,000 W for half-sine wave). Test

49、 shall be performed on each sublot; sampling plan n = 10, c = 0, electrical end-points, see table I, subgroup 2 herein. 4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX and JANTXV of MIL-PRF-19500). Subgroup Method Condition B3 1027 IO= 3A minimum (see col. 4 of 1.3) minimum; adjust IOor TAto achieve the required TJ, apply VR = ratedVRWM(see