DLA MIL-PRF-19500 379 J-2012 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON HIGH-POWER TYPES 2N3791 AND 2N3792 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/379J 2 July 2012 SUPERSEDING MIL-PRF-19500/379H 1 February 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPES 2N3791 AND 2N3792, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of t

2、he Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are

3、provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (similar to TO-3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PT(1) TA= +25C PT(2) TC= +100C VCBOVCEOVEBOIBICTJand TSTGRJC2N3791 2N3792 W 5.0 5.0 W 85.7 85.7 V dc 60 80 V dc 60 80 V dc

4、 7.0 7.0 A dc 4.0 4.0 A dc 10 10 C -65 to +200 -65 to +200 C/W 1.1 1.1 (1) Derate linearly 28.57 mW/C above TA= +25C. (2) See figure 2 for temperature-power derating curves. 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. hFE2(1) hFE4(1) VBE(SAT)1(1) VCE(SAT)1(1) Cobo|h

5、fe| VCE= 2.0 V dc IC= 3.0 A dc VCE= 4.0 V dc IC= 10 A dc IC= 5.0 A dc IB= 0.5 A dc IC= 5.0 A dc IB= 0.5 A dc VCB= 10 V dc IE= 0 f = 1 MHz VCE= 10 V dc IC= 0.5 A dc f = 1 MHz Min Max 30 120 5.0 V dc 1.5 V dc 1.0 pF 500 4.0 20 (1) Pulse (see 4.5.1). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions

6、, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database

7、at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/379J 2 NOTES: 1. Dimensions are in

8、 inches. 2. Millimeters are given for general information only. 3. Terminal 2, base; terminal 1, emitter; case, collector. 4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating

9、plane. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Collector shall be

10、electrically connected to the case. 7. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-3). Dimensions Ltr Inches Millimeters Notes Min Max Min Max

11、CD .875 22.22 CH .270 .350 6.86 8.89 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 7 LL .312 .500 7.92 12.70 L1.050 1.27 7 MHD .151 .165 3.84 4.19 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4,5 PS1.205 .225 5.21 5.72 4,5 s1.655 .675 16.64 17.

12、15 4 TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/379J 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documen

13、ts cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 o

14、f this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these document

15、s are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/

16、assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this docum

17、ent and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF

18、-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Ab

19、breviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with

20、MIL-PRF-19500, MIL-STD-750, and herein (see 6.2). 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical te

21、st requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for

22、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/379J 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance in

23、spection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revisi

24、on of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTX, and JA

25、NTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MI

26、L-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750. (see 4.3.2) Thermal impedance, method 3131 of MIL-STD-750. (see 4.3.2) 9 ICES1and hFE2ICES111 ICES1and hFE2 ICES1= 100 percent of initial value or 5 A dc, whichever is greater. hFE2= 15 percent of i

27、nitial value. ICES1and hFE2; ICES1= 100 percent of initial value or 10 A dc, whichever is greater. 12 See 4.3.1 See 4.3.1 13 ICES1= 100 percent of initial value or 1 A dc, whichever is greater; hFE2= 15 percent of initial value; subgroups 2 and 3 of table I herein. ICES1= 100 percent of initial valu

28、e or 5 A dc, whichever is greater; hFE2= 15 percent of initial value; subgroup 2 of table I herein. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or net

29、working permitted without license from IHS-,-,-MIL-PRF-19500/379J 5 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +187.5C 12.5C; VCB= 35 5 V dc; TA= room ambient as defined in the general requirements of MIL-STD-750. 4.3.2 Thermal impedance. The thermal impedance measu

30、rements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and table I shall comply with the thermal impedance graph in figure 3 (le

31、ss than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall

32、 be conducted in accordance with appendix E, table E-V, MIL-PRF-19500 and herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-195

33、00, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions *

34、B3 2037 Test condition D; all internal wires for each device shall be pulled separately. B4 1037 VCB= 30 V dc; PT= 5 W at TA= +25C 3C, ton= toff = 3 minutes minimum for 2,000 cycles. No heat sink nor forced air on the device shall be permitted. B5 1027 VCB= 30 V dc; TA= +125C 25C for 96 hours; PT= a

35、djusted as required by the chosen TAto give an average lot TJ= +275C. B6 3131 See 4.5.2. 4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1027 TJ= +187.5C 12.5C; VCB= 35 V dc 5 V dc; TA +100C. B5 3131 See 4.5.2. B6 1032 TA=

36、+200C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. Delta requirements

37、 shall be in accordance with the applicable steps of table II herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds, t = 15 s. C6 1026 TJ= +187.5C 12.5C; VCB= 35 V dc; TA +100C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

38、,-MIL-PRF-19500/379J 6 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgr

39、oup 2. Delta requirements shall be in accordance with the applicable steps of table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750.

40、 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 1.0 A dc minimum. b. Collector to emitter voltage magnitude shall be 1

41、0 V dc minimum. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25C TR +75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RJC= 1.1. Provided by IHSNot for ResaleNo reproduct

42、ion or networking permitted without license from IHS-,-,-MIL-PRF-19500/379J 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Collector-emitter

43、breakdown voltage 3011 Bias conditions D, IC= 10 mA dc; pulsed (see 4.5.1) V(BR)CEO2N3791 60 V dc 2N3792 80 V dc Emitter-base cutoff current 3061 Bias condition D; VEB= 7 V dc IEBO5.0 mA dc Collector-base cutoff current 3036 Bias conditions D ICBO2N3791 VCB= 60 V dc 20 A dc 2N3792 VCB= 80 V dc 20 A

44、dc Collector-emitter cutoff current 3041 Bias condition A; VBE= 1.5 V dc ICEX2N3791 VCE= 60 V dc 20 A dc 2N3792 VCE= 80 V dc 20 A dc Collector-emitter cutoff current 3041 Bias condition C ICES12N3791 VCE= 50 V dc 20 A dc 2N3792 VCE= 70 V dc 20 A dc Base-emitter saturated voltage 3066 Test condition

45、A; IC= 5 A dc; IB= 0.5 A dc; pulsed (see 4.5.1) VBE(sat)11.5 V dc Base-emitter saturated voltage 3066 Test condition A; IC= 10 A dc; IB= 2 A dc; pulsed (see 4.5.1) VBE(sat)23.0 V dc Collector-emitter saturated voltage 3071 IC= 5 A dc; IB= 0.5 A dc; pulsed (see 4.5.1) VCE(sat)11.0 V dc Collector-emit

46、ter saturated voltage 3071 IC= 10 A dc; IB= 2 A dc; pulsed (see 4.5.1) VCE(sat)22.5 V dc Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 1.0 A dc; pulsed (see 4.5.1) hFE150 150 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

47、rom IHS-,-,-MIL-PRF-19500/379J 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE230 120 Forward-current transfer ratio 3076 V

48、CE= 2.0 V dc; IC= 5 A dc; pulsed (see 4.5.1) hFE310 Forward-current transfer ratio 3076 VCE= 4.0 V dc; IC= 10 A dc; pulsed (see 4.5.1) hFE45 Subgroup 3 High temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias conditions C ICES22N3791 2N3792 VCE= 50 V dc VCE= 70 V dc 3.4 mA

49、 dc 3.4 mA dc Low temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE512 Subgroup 4 Switching parameters: See figure 4 Pulse delay time td0.2 s Pulse rise time tr1.3 s Pulse storage time ts1.4 s Pulse fall time tf1.0 s Small-signal short-circuit