DLA MIL-PRF-19500 211 D-2012 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER TYPES 1N3164 1N3168 1N3170 1N3172 1N3174 1N3175 1N3176 1N3177 AND R TYPES JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, AND R, TYPES JAN, JANTX, AND JANTXV This specification is appr

2、oved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon power rectifier. Three

3、 levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Normal and reverse types (reverse types, suffix R). Reverse and normal types are identical except: The normal types have the cathode connected to the stud and the reverse types have the anode connected

4、to the stud. Designated values are applicable to both types. 1.3 Physical dimensions. See figure 1 (DO-205AB -formerly DO-9). 1.4 Ratings and characteristics. Type VRSMVRWMIO TC= 150C (1) IOTC= 120C (1) IFSM1/120 s Barometric pressure (reduced) TJand TSTG1N3164, R 1N3168, R 1N3170, R 1N3172, R 1N317

5、4, R 1N3175, R 1N3176, R 1N3177, R V (pk) 240 480 720 960 1,200 1,440 1,680 1,920 V (pk) 200 400 600 800 1,000 1,200 1,400 1,600 A dc 200 200 200 200 200 200 200 200 A dc 300 300 300 300 300 300 300 300 A (pk) 6,250 6,250 6,250 6,250 6,250 6,250 6,250 6,250 mm Hg 8 8 15 15 33 33 54 C -65 to +200 -65

6、 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 (1) Derate linearity at: 4.0 A dc/C for +150C TC +200C; 3.33 A dc/C for +120C TC +150C. 1.5 Thermal resistance characteristic: RJC= 0.20C/W. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this doc

7、ument should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/.

8、 The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents l

9、isted in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list,

10、document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbook

11、s form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STAND

12、ARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of pr

13、ecedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempt

14、ion has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying act

15、ivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interfac

16、e and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (DO-205AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, and as specified herein. Where a choice of lead finish is desired, it shall be specified in the acquisition documen

17、t (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 3 3.4.2 Processing exemptions. Suppliers to this specification are exempt from the following restrictions stated in MIL-PRF-19500 regarding offshore wafer processing: a.

18、Beveling operation. b. Isotropic etching of die surface. c. Die attach operation which promotes any diffusion of metal alloy into silicon die. 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. * 3.6 Electrical performance characteristics. Unless otherwise specified herein, the elec

19、trical performance characteristics are as specified in 1.4, 1.5, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall b

20、e free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4

21、 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or re-qualification only. In case qualification was awarded to a prior revision of t

22、he associated specification that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. Provided by IHSNot for ResaleNo reprod

23、uction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 4 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Complete threads to extend to within 2.5 threads of seating plane. 3. .750-16 UNF-2A. Maximum pitch diameter of plated threads s

24、hall be basic pitch diameter, .7094 inch (18.019 mm) ref. (Screw Thread Standards for Federal Services) FED-STD-H28. 4. Angular orientation of terminal and tabulation with respect to hex base is undefined. Square or radius on end of terminal is undefined. 5. A chamfer (or undercut) on one, or both,

25、ends of hexagonal portions is optional. 6. Tabulation optional. 7. Minimum flat. 8. Flexible leads. FIGURE 1. Physical dimensions for semiconductor devices. Dimensions Letter Inches Millimeters Notes Min Max Min Max A 1.520 38.10 4 B .530 .755 13.46 19.18 C .063 .172 1.60 4.37 D 1.100 27.94 D1.600 1

26、5.24 E 1.218 1.252 30.94 31.75 F .250 .562 6.35 14.27 5 H 5.125 6.750 130.18 171.45 I1.375 9.53 7 M .660 .745 16.76 18.92 2 M1.125 3.18 6 N .793 .828 20.14 21.03 Q 2.300 57.15 Q1.375 9.53 6 t .265 .350 6.73 3.89 W 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

27、 from IHS-,-,-MIL-PRF-19500/211D 5 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein sh

28、all not be acceptable. Screening (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels 1 Method 2073 of MIL-STD-750 may be used in lieu of method 2074 for compression bonded devices only. 3c Thermal impedance (see 4.3.1). 4 2,500 G; performed prior to installation of external lead. 1

29、0 Not applicable. 11 IRM1and VFMof subgroup 2 of table I herein. 12 Method 1038 of MIL-STD-750, condition A; VRM= VRWMrated (see 1.4), TC= 150C; f = 60 Hz. 13 Subgroup 2 of table I herein: IRM1= 0.5 mA (pk) or 100 percent of initial value, whichever is greater. VFM= 0.1 V (pk). 4.3.1 Thermal impedan

30、ce. The thermal impedance measurements shall be performed in accordance with method 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance

31、inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, table I herein, and as specified herein. Electrical measurements (end-points) and delta requirements shall be i

32、n accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) and de

33、lta requirements shall be in accordance with applicable steps of table II herein. 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B3 1048 Blocking life. TC= 185C, -10, +0; VRWM= VRM(see 1.4); IO= 0, half sine wave, or f = 60 Hz. B3 1037 Se

34、e 4.5.1, TJ= +85C minimum; IO 75 A, 2,000 cycles. B5 4081 RJC= 0.20C/W. B6 1032 TA= +200C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 6 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the con

35、ditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta limits shall be in accordance with table II herein. 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1051 -55C to +175C, 25 cycles. C2 2036 Ten

36、sion (lead): Test condition A; weight = 100 pounds; t = 15 3 seconds. Bending stress (lead): Test condition F; 10 pounds; t = 15 3 seconds. Torque (stud): Test condition D2; torque = 325 inch-pounds; t = 15 3 seconds. C2 1071 Gross leak. Test condition C, step 2 or test condition D. C5 1001 (For qua

37、lification only); t = 60 s, see 1.4 for test conditions (not applicable for 1N3164). C6 1037 See 4.5.1, TJ= +85C minimum; IO 75 A, 6,000 cycles. or C6 1048 Blocking life. TC= +185C, -10, +0; VRWM= VRM(see 1.4); IO= 0, half sine wave, f = 60 Hz. 4.4.4 Group E inspection. Group E inspection shall be c

38、onducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table III herein. Electrical measurements (end-points) shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate t

39、ables as follows. 4.5.1 Power cycling. One complete test shall be as follows: First, heat the case to the maximum temperature specified by passing the specified amount of forward current through the diode under test. Then, remove the applied current and allow the case temperature to cool to the mini

40、mum case temperature specified. No time limit is applicable to any one cycle; however, the cycling shall be continuous until the required number of cycles have been completed. Sample size = 12, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

41、IL-PRF-19500/211D 7 * TABLE I. Group A inspection. Inspection MIL-STD-750 Symbol Limits Unit 1/ Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.1 ZJCC/W Forward voltage 4011 Pulse method: IFM= 940 A (pk); pulse width = 8.5 ms m

42、ax; duty cycle = 2 percent max VFM11.55 V (pk) Reverse current 4016 AC method: IRM11N3164, R VRM= 200 V (pk) 10 mA (pk) 1N3168, R VRM= 400 V (pk) 10 mA (pk) 1N3170, R VRM= 600 V (pk) 10 mA (pk) 1N3172, R VRM= 800 V (pk) 10 mA (pk) 1N3174, R VRM= 1,000 V (pk) 10 mA (pk) 1N3175, R VRM= 1,200 V (pk) 10

43、 mA (pk) 1N3176, R VRM= 1,400 V (pk) 10 mA (pk) 1N3177, R VRM= 1,600 V (pk) 10 mA (pk) Reverse current at peak reverse voltage 4016 AC method: IRM21N3164, R VRM= 240 V (pk) 50 mA (pk) 1N3168, R VRM= 480 V (pk) 50 mA (pk) 1N3170, R VRM= 720 V (pk) 50 mA (pk) 1N3172, R VRM= 960 V (pk) 50 mA (pk) 1N317

44、4, R VRM= 1,200 V (pk) 50 mA (pk) 1N3175, R VRM= 1,440 V (pk) 50 mA (pk) 1N3176, R VRM= 1,680 V (pk) 50 mA (pk) 1N3177, R VRM= 1,920 V (pk) 50 mA (pk) See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 8

45、 * TABLE I. Group A inspection - Continued. Inspection MIL-STD-750 Symbol Limits Unit 1/ Method Conditions Min Max Subgroup 3 High temperature operation: TC= +175C Reverse current 4016 AC method: IRM31N3164, R VRM= 200 V (pk) 30 mA (pk) 1N3168, R VRM= 400 V (pk) 30 mA (pk) 1N3170, R VRM= 600 V (pk)

46、30 mA (pk) 1N3172, R VRM= 800 V (pk) 30 mA (pk) 1N3174, R VRM= 1,000 V (pk) 30 mA (pk) 1N3175, R VRM= 1,200 V (pk) 30 mA (pk) 1N3176, R VRM= 1,400 V (pk) 30 mA (pk) 1N3177, R VRM= 1,600 V (pk) 30 mA (pk) Low temperature operation: TC= -65C Reverse current 4016 AC method: IRM41N3164, R VRM= 200 V (pk

47、) 50 mA (pk) 1N3168, R VRM= 400 V (pk) 50 mA (pk) 1N3170, R VRM= 600 V (pk) 50 mA (pk) 1N3172, R VRM= 800 V (pk) 50 mA (pk) 1N3174, R VRM= 1,000 V (pk) 50 mA (pk) 1N3175, R VRM= 1,200 V (pk) 50 mA (pk) 1N3176, R VRM= 1,400 V (pk) 50 mA (pk) 1N3177, R VRM= 1,600 V (pk) 50 mA (pk) Subgroups 4 and 5 No

48、t applicable Subgroup 6 Surge current 4066 TC= +150C; IFMS= 5,000 A (pk), IO= 200 A dc; ten 1/120 s surges; 1 surge/minute VRM= VRWM (see 1.4) Electrical measurements See table II, steps 1 and 2 Subgroup 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/211D 9 TABLE II. Groups A, B, C,