DLA MIL-M-38510 209 G-2013 MICROCIRCUIT DIGITAL 8192-BIT SCHOTTKY BIPOLAR PROGRAMMABLE READ-ONLY MEMORY (PROM) MONOLITHIC SILICON.pdf
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1、 INCH-POUND MIL-M-38510/209G 13 September 2013 SUPERSEDING MIL-M-38510/209F 15 April 2013 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the
2、Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zap
3、ped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the re
4、quirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit Access time (ns) 01 2048 word / 4 bits per
5、word PROM with uncommitted collector 125 02, 08, 10 2048 word / 4 bits per word PROM with active pullup and a third high-impedance state output 125, 90, 55 03 1024 word / 8 bits per word PROM with uncommitted collector 90 04, 09 1024 word / 8 bits per word PROM with active pullup and a third high-im
6、pedance state output 90, 55 05 1024 word / 8 bits per word PROM with active pullup and a third high-impedance state output 90 06 1024 word / 8 bits per word PROM with uncommitted collector 90 NOTE: Device type 07 was deleted from this document under revision D. 1.2.2 Device class. The device class i
7、s the product assurance level as defined in MIL-PRF-38535. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memorydla.mil. Since contact info
8、rmation can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil AMSC N/A FSC 5962 Inactive for new design after 24 July 1995 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
9、-MIL-M-38510/209G 2 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack V GDIP1-T18 or CDIP2-T18 18 Dual-in-line X See fig
10、ure 1 18 Flat pack Y GDFP2-F18 18 Flat pack 1.3 Absolute maximum ratings. Supply voltage range -0.5 V to +7.0 V Input voltage range . -1.5 V at -10 mA to +5.5 V Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction to case (JC) : Cases
11、J, K, V, and Y . See MIL-STD-1835 1/ Case X 35C/W maximum 1/ Output voltage . -0.5 V to +VCCOutput sink current 100 mA Maximum power dissipation (PD) : Device types 01, 02, 08, and 10 950 mW 2/ Device types 03, 04, 05, 06, and 09 1.1 W 2/ Maximum junction temperature (TJ) +175C 1.4 Recommended opera
12、ting conditions. Supply voltage range +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH) . 2.0 V Maximum low-level input voltage (VIL) 0.8 V Normalized fanout (each output) : Device types 01, 02, 08, and 10 . 12 mA 3/ Device types 03, 04, 05, 06, and 09 . 8 mA 3/ Case oper
13、ating temperature range (TC) -55 C to +125 C _ 1/ Heat sinking is recommended to reduce the junction temperature. 2/ Must withstand the added PDdue to short circuit test (e.g. IOS). 3/ 16 mA for circuits B, D, and F devices. Provided by IHSNot for ResaleNo reproduction or networking permitted withou
14、t license from IHS-,-,-MIL-M-38510/209G 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional informat
15、ion or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 S
16、pecifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - In
17、tegrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outline (Copies of these documents are available online at http:/quicksearc
18、h.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except fo
19、r related specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be produ
20、cts that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified her
21、ein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
22、MIL-PRF-38535 and herein. 3.3.1 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3.2 Truth table. 3.3.2.1 Unprogrammed devices. The truth tables for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 3. When require
23、d in groups A, B, or C inspection (see 4.4), the devices shall be programmed by the manufacturer prior to test in a checkerboard pattern (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of b
24、its programmed. 3.3.2.2 Programmed devices. The truth table for programmed devices shall be as specified by the altered item drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 4 3.3.3 Functional block diagram. The functional bl
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