DLA MIL PRF 19500 736A VALID NOTICE 1-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N7572 2N7573 AND 2N7574 JAN JANTX JANTXV AND JANS.pdf

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1、 MILPRF19500/736A 18 October 2012 SUPERSEDING MILPRF19500/736 5 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7572, 2N7573, AND 2N7574, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agen

2、cies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power darlington transistors. Four levels of product a

3、ssurance are provided for each device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO210AC (formerly TO61 isolated) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTRJC (2)VCBOand VCEXVCEOVEBOIBICTJand TSTGTA= +

4、25C TC= +25C (1) W W C/W V dc V dc V dc A dc A dc C 2N7572 6 140 1.25 350 300 4.0 2.5 20 65 to +200 2N7573 6 140 1.25 400 350 4.0 2.5 20 65 to +200 2N7574 6 140 1.25 450 400 4.0 2.5 20 65 to +200 (1) See figure 2 for temperature-power derating curves. (2) See figure 3 for thermal impedance graph. AM

5、SC N/A FSC 5961INCHPOUND Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address info

6、rmation using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF1

7、9500/736A 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. hFE1(1) hFE2(1) VBE(sat)VCE(sat)1Limits VCE= 5 V dc IC= 10 A dc VCE= 5V dc IC= 20 A dc IC= 15 A dc IB= 1.2 A dc IC= 15 A dc IB= 1.2 A dc Min Max 75 500 50 V dc 2.6 V dc 1.5 |hfe| Cobo Pulse response (2) Limits

8、VCE= 10 V dc IC= 1 A dc f = 1 MHz VCB= 10 V dc IE= 0 100 KHz f 1 MHz td tr ts tf Min Max 25 pF 150 375 s 0.1 s 0.3 s 1.2 s 0.3 (1) Pulsed (see 4.5.1). (2) See figure 4 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3,

9、4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet al

10、l specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specif

11、ied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices.

12、(Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in t

13、he event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduct

14、ion or networking permitted without license from IHS-,-,-MILPRF19500/736A 3 FIGURE 1. Physical dimensions (TO210AC, formerly TO61). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/736A 4 Dimension Ltr Inches Millimeters Notes Min Max Min

15、Max A1.270 6.86 CD .570 .610 14.48 15.49 CD1.610 .687 15.49 17.45 CH .325 .460 8.26 11.68 HF .667 .687 16.94 17.45 HT .090 .150 2.29 3.81 OAH .640 .875 16.26 22.22 3 PS .340 .415 8.64 10.54 4, 6 PS1.170 .213 4.32 5.41 4, 6 SL .422 .455 10.72 11.56 SU .090 2.29 T .047 .072 1.19 1.83 T1 .046 .077 1.17

16、 1.96 UD .220 .249 5.59 6.32 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. See NSB Handbook H28, “ScrewThread Standards for Federal Services“. 3. All three terminals. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. T

17、erminal spacing measured at the base seat only. 6. This dimension applies to the location of the center line of the terminals. 7. Terminal 1 is emitter, terminal 2 is base, and terminal 3 is collector. All leads are isolated from the case. 8. In accordance with ASME Y14.5M, diameters are equivalent

18、to x symbology. FIGURE 1. Physical dimensions (TO210AC, formerly TO61) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/736A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 an

19、d as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Acronyms,

20、symbols, and definitions. The acronyms, symbols, and definitions used herein shall be as specified in MILPRF19500 and as follows: IH The collector current applied to the device under test during the heating period. IM The measurement current applied to forward bias the junction for measurement of VB

21、E. tH The duration of the applied heating power pulse. tSW Sample window time during which final VBEmeasurement is made. 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (TO210AC, formerly TO61

22、 isolated) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. The identification of termin

23、als of the device package shall be as shown on figure 1. Terminal 1 shall be connected to the emitter, terminal 2 shall be connected to the base, and terminal 3 shall be connected to the collector. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance characteristi

24、cs. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a

25、 manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screenin

26、g (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500, and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only

27、. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain

28、qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/736A 6 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements

29、 shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANS JANTX and JANTXV 3c (1) Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 ICEX1ICEX111 ICEX1and hFE2, ICEX1 =

30、 100 percent of initial value or 50 nA dc, whichever is greater. ICEX1and hFE2, ICEX1 = 100 percent of initial value or 100 nA dc, whichever is greater. 12 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein. ICEX1 = 100 percent of initial value or 50 nA dc, whichever is greater. hFE2 = 15 pe

31、rcent of initial value. Subgroup 2 of table I herein. ICEX1 = 100 percent of initial value or 100 nA dc, whichever is greater. hFE2 = 25 percent of initial value. (1) This test shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in scre

32、ening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test method 3131 of MILSTD750 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VHwhere appropriate). The thermal impedance limit used in 4.3, screen 3c,

33、 and table I, subgroup 2 shall comply with the thermal impedance graph on figure 3 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in test method 3131 of MILSTD750. Measurement delay time (tMD) 70 s maximu

34、m. See group E inspection (table II, subgroup 4) herein. 4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TJ= +175C minimum, VCBgreater than or equal to 30 V dc; TA= +30C maximum. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500,

35、 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networ

36、king permitted without license from IHS-,-,-MILPRF19500/736A 7 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVIA (JANS) or table EVIB (JAN, JANTX, and JANTXV) of MILPRF19500 and herein. Electrical

37、measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.4.2.1 Product assurance level JANS (table EVIA of MILPRF19500). Subgroup Method Conditions B3 2037 Test condition A. B4 1037 2,000 cyc

38、les, adjust power or current to achieve a TJ= +100C. 4.4.2.2 Product assurance levels JAN, JANTX, and JANTXV (table EVIB of MILPRF19500). Subgroup Method Conditions B3 1027 For eutectic die attach: VCBgreater than or equal to 30 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum. B3 1037

39、For solder die attach: 2,000 cycles, VCBgreater than or equal to 100 V dc. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table EVII of MILPRF19500 and as follows herein. Electrical measurements (end-points) shall b

40、e in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds (4.54 Kg); time = 15 s. C2 2036 Test condition D1; torque = 6 inch-ounce (42.4 mNm); time =15 s.

41、C2 2036 Stud torque, test condition D2; torque = 15 inch-pound (105.9 mNm); time = 15 s. C5 3131 See 4.3.1, RJC= 1.25C/W. C6 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum, 1,000 hours minimum. C6 1037 For solder die attach

42、: 6,000 cycles, VCBgreater than or equal to 100 V dc. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) sha

43、ll be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse response measurements. The conditions for

44、 pulse response measurement shall be as specified in section 4 of MILSTD750. 4.5.2 Insulation resistance test. Isolation resistance test conditions shall be as follows: Test method 1016 of MILSTD750, short collector, emitter and base terminals together. The limit shall be 109 minimum. Provided by IH

45、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/736A 8 4.6 Delta measurements. The requirements for delta measurements for groups B, C, and E shall be as specified below. Steps Inspection (1) (2) (3) (4) (5) MILSTD750 Symbol Limits Unit Method Conditio

46、ns Min Max 1 Collector to base cutoff current 3036 Bias condition D ICBO 100 percent of initial value or 100 nA, whichever is greater. 2N7572 VCB= 350 V dc 2N7573 VCB= 400 V dc 2N7574 VCB= 450 V dc 2 Forward current transfer ratio 3076 VCE= 5 V dc; IC= 20 A dc; pulsed (see 4.5.1) hFE225 percent chan

47、ge from initial reading. 3 Saturation voltage, collector to emitter 3071 IC= 15 A dc; IB= 1.2 A dc, pulsed (see 4.5.1) VCE(sat)1200 mV change from previously measured value. (1) Devices which exceed the group A limits for this test shall not be acceptable. (2) The delta electrical measurements for g

48、roup B, product assurance level JANS, shall be as follows: a. In addition to the measurements specified for subgroup 4 of table EVIA of MILPRF19500, the measurements of steps 1 and 2 of this table shall also be taken. b. In addition to the measurements specified for subgroup 5 of table EVIA of MILPRF19500, the measurements of steps 1 and 2 of this table shall also be taken. (3) The delta electrical measurements for group B, product assurance levels JAN, JANTX and JANTXV, shall be as follows: a. In addition to the measurements