DLA MIL PRF 19500 670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE DIODE SILICON BARRIER RECTIFIER SCHOTTKY TYPES 1N6826 1N6826US 1N6831 and 1N6831US JAN JANTX JANTXV JANS JANHC AND J.pdf

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1、 MILPRF19500/670A 30 JULY 2013 SUPERSEDING MILPRF19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all De

2、partments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four

3、levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500. Two level of product assurance is provided for each unencapsulated device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package styles are as follows: axial lead in accorda

4、nce with figure 1 for device types 1N6826 and 1N6831, surface mount in accordance with figure 2 for device types 1N6826US and 1N6831US, and unencapsulated die in accordance with figure 3 for device type JANHC and JANKC. 1.3 Maximum ratings. Types VRWMIO1(3) IFSMTJand TSTGV (pk) A dc A (pk) C 1N6826,

5、 1N6826US 100 (1) 3.0 60 65C to 200C 1N6831, 1N6831US 200 (2) 3.0 60 65C to 200C (1) Derate linearly at 60 mA/C above TLor TEC= +150C where TLis at L = .375 inch (9.52 mm). (2) Derate linearly at 60 mA/C above TLor TEC= +150C where TLis at L = .375 inch (9.52 mm). (3) Derate linearly at 43 mA/C abov

6、e TLor TEC= +130C where TLis at L = .375 inch (9.52 mm). AMSC N/A FSC 5961INCHPOUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 January 2014. Comments, suggestions, or questions on this document should be addressed to DLA Land and

7、 Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproducti

8、on or networking permitted without license from IHS-,-,-MILPRF19500/670A 2 1.4 Primary electrical characteristics. Unless otherwise specified, at TA= +25C. Types Max VFM1Max VFM2Max IRM VRWMpulsed method (see 4.5.1) Max CTVR= 5 V dc Max RJLor RJEC.375 inch (9.52 mm) Max ZJXIFM = 1.0 A IFM = 3.0 A TJ

9、= +25C IRM1TJ=+125C IRM2lead length or end cap V (pk) V (pk) A mA pF C/W C/W 1N6826 1N6826US 1N6831 1N6831US 0.76 0.76 0.83 0.83 0.84 0.84 0.92 0.92 5.0 5.0 3.0 3.0 0.25 0.25 0.20 0.20 100 100 60 60 30 10 30 10 3.0 3.0 3.0 3.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section

10、 are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are ca

11、utioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this

12、 document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Metho

13、ds for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or

14、 in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot

15、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max LD .036 .042 0.91 1.07 BD .115 .145 2.92 3.68 3 BL .130 .195 3.30 4.95 LL .900 1.300 22.86 33.02 L1 .030 0.76 4 NOTES: 1. Dimensions are in inc

16、hes. 2. Metric equivalents are given for general information only. 3. Symbol BD shall be measured at the largest diameter. 4. Lead diameter is not controlled in this zone to allow for flash, lead finish build-up, and mirror irregularities other than heat slugs. FIGURE 1. Physical dimensions of 1N682

17、6 and 1N6831. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 4 Dimensions Symbol Inches Millimeters Min Max Min Max BL .200 .225 5.08 5.72 BD .137 .148 3.48 3.76 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches

18、. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions of surface mount family, 1N6826US and 1N6831US. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 5 (A-version) Dimensions Symbol Inches Mill

19、imeters Min Max Min Max A .058 .062 1.47 1.75 B .052 .055 1.32 1.40 Design data Metallization: Top (anode): AL Back (cathode): Ag AL thickness 25,000 minimum Ag thickness 30,000 minimum Chip thickness .011 .001 inch (0.279 0.025 mm) FIGURE 3. JANC die dimensions. Provided by IHSNot for ResaleNo repr

20、oduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufac

21、tured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MILPRF1950

22、0. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions for the purpose of interchangeability shall be as specified in MILPRF19500 and figures 1, 2, and 3 herein. 3.4.1 Diode construction. These devices shall be constructed utilizing non-cavity doubl

23、e plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MILPRF19500). Metallurgical bond shall be in accordance with the requirements of category II in MILPRF19500. Surface mount devices shall be structurally identical to the non-s

24、urface mount devices except for lead terminations. 3.4.2 Lead finish. Unless otherwise specified, the lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3 Po

25、larity. The identification of terminals of the device package shall be as shown on figure 1. Terminal 1 shall be connected to the cathode and terminal 2 shall be connected to the anode. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characte

26、ristics are as specified in 1.3 and 1.4. 3.6 Electrical test requirements. The electrical test requirements shall be in accordance with group A as specified herein. 3.7 Marking. Devices shall be marked as specified in MILPRF19500. 3.7.1 Marking for surface mount ( US ) devices. Surface mount (US) su

27、ffix parts are to be marked with the polarity identification. Initial container package marking will be in accordance with MILPRF19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, s

28、erviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). Provided by IHSNot for Resa

29、leNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 7 4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500 and as specified herein. 4.2.1 Construction verification. Cross sectional photos from three devices shall be submit

30、ted in the qualification report. 4.2.2 JANHC and JANKC die devices. Qualification for these devices shall be in accordance with MILPRF19500. This testing may be performed on a TO5 hermetic metal package in lieu of the axial leaded package. 4.2.3 Group E qualification. Group E inspection shall be per

31、formed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the f

32、irst inspection lot of this revision to maintain qualification. 4.3 Screening of packaged devices (quality levels JAN, JANTX, JANTXV, and JANS only). Screening of packaged devices shall be in accordance with table EIV of MILPRF19500 and as specified herein. The following measurements shall be made i

33、n accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels JAN level 3a Temperature cycling Temperature cycling Temperature cycling in accordance with JANTX level M

34、ILPRF19500 3c (1) Thermal impedance (see 4.5.3) Thermal impedance (see 4.5.3) Thermal impedance (see 4.5.3) 9 IRM1and VFM2Not applicable Not applicable 10 (2) 1N6826: TA= +150C; VR= 80 V(dc); 1N6831: TA= +150C; VR= 160 V(dc) 1N6826: TA = +150C; VR= 80 V(dc); 1N6831: TA= +150C; VR= 160 V(dc) Not appl

35、icable 11 IRM1 100 percent of initial reading or 70 percent IRM1whichever is greater. VFM2 50 mV dc. IRM1and VFM2Not applicable 12 See 4.3.2 See 4.3.2, t = 48 hours Not applicable 13 Subgroup 2 and 3 of table I herein; IRM1 100 percent of initial reading or 70 percent IRM1whichever is greater; VFM2

36、50 mV dc. Subgroup 2 of table I herein; IRM1 100 percent of initial reading or 70 percent IRM1whichever is greater; VFM2 50 mV dc. Not applicable (1) Thermal impedance shall be performed any time after sealing provided temperature cycling (screen 3a) is performed in accordance with MILPRF19500, scre

37、en 3 prior to this thermal impedance. Quality levels JANTX and JANTXV do not need to be repeated in screening requirements. (2) Junction temperature (TJ) is not to exceed +200C with VRWM. TJis affected by the device mounting thermal resistance when parasitic power is generated by the temperature dep

38、endent leakage current. Until this leakage becomes significant near thermal runaway, TJremains approximately equal to TA or TLfor IO= 0.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 8 4.3.1 Screening of unencapsulated die (JANHC or

39、 JANKC). Screening of JANHC or JANKC unencapsulated die shall be in accordance with appendix G of MILPRF19500 and as specified herein. The burn-in duration for JANHC level shall follow the JANTX requirements of table EIV of MILPRF19500. 4.3.2 Power burn-in conditions. The power burn-in conditions sh

40、all be as follows: TA= room ambient as defined in the general requirements of MILSTD750. Devices may be mounted using any convenient method including the temporary attachment of leads on US suffix devices, provided that the parts are burned-in at TJ= +150C minimum. 4.4 Conformance inspection. Confor

41、mance inspection shall be in accordance with MILPRF19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the cond

42、itions specified for subgroup testing in table EVIA (JANS) and table EVIB (JAN, JANTX, and JANTXV) of MILPRF19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2.1 Quality level JANS (table EVIA of

43、 MILPRF19500). Subgroup Method Condition B3 4066 IFSM= 60 A (pk), condition A 2, IO= 3 A dc; TA= room ambient as defined in the general requirements of MILSTD750 (see 4.5); 5 surges of 8.3 ms each at 1 minute intervals. B4 1036 IF= 3.0 A; TA= room ambient as defined in the general requirements of MI

44、LSTD750; ton= toff= 3 minutes minimum for 2,000 cycles. B5 1038 IF= 3.0 (min) with IFadjusted as required to achieve an average lot TJ= +200C +0, 15C. TAcan be adjusted to achieve TJ= +200C. f = 50 -60 Hz, at VRWM (see 1.3). B6 3101 RJL= 30C/W; L = .375 inch (9.52 mm) lead length (non-surface mount)

45、. RJEC= 10C/W (surface mount). 4.4.2.2 Quality levels JAN, JANTX and JANTXV (table EVIB of MILPRF19500). Subgroup Method Condition B2 4066 IFSM= 60 A(pk), condition A 2, IO= 3.0 A; TA= room ambient as defined in the general requirements of MILSTD750 (see 4.5); 5 surges of 8.3 ms each at 1 minute int

46、ervals. B3 1027 IO= 3.0 A; TA= room ambient as defined in the general requirements of MILSTD750 (see 4.5); f = 50-60 Hz, at VRWM(see 1.3); TL +55C, lead length = .375 inch (9.52 mm). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 9

47、4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table EVII of MILPRF19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Subgroup Method Conditi

48、on C2 2036 Axial devices only, both tension and lead fatigue shall be evaluated. The following shall apply: Test condition A; weight = 20 pounds (9.1 kg); t = 15 s. Test condition E; weight = 1 pound (0.45 Kg). C2 2038 US devices only, any test condition. If condition B is used, the weight shall be 20 pounds (9.1 kg). C6 1026 IO= 3.0 A; TA= room ambient as defined in the general requirements of MILSTD750 (see 4.5); f = 50-60 Hz, at VRWM(see 1.3). TL +55C, lead length = .375 inch (9.52 mm). C6 10