DLA MIL PRF 19500 670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE DIODE SILICON BARRIER RECTIFIER SCHOTTKY TYPES 1N6826 1N6826US 1N6831 and 1N6831US JAN JANTX JANTXV JANS JANHC AND J.pdf
《DLA MIL PRF 19500 670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE DIODE SILICON BARRIER RECTIFIER SCHOTTKY TYPES 1N6826 1N6826US 1N6831 and 1N6831US JAN JANTX JANTXV JANS JANHC AND J.pdf》由会员分享,可在线阅读,更多相关《DLA MIL PRF 19500 670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE DIODE SILICON BARRIER RECTIFIER SCHOTTKY TYPES 1N6826 1N6826US 1N6831 and 1N6831US JAN JANTX JANTXV JANS JANHC AND J.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 MILPRF19500/670A 30 JULY 2013 SUPERSEDING MILPRF19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all De
2、partments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four
3、levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500. Two level of product assurance is provided for each unencapsulated device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package styles are as follows: axial lead in accorda
4、nce with figure 1 for device types 1N6826 and 1N6831, surface mount in accordance with figure 2 for device types 1N6826US and 1N6831US, and unencapsulated die in accordance with figure 3 for device type JANHC and JANKC. 1.3 Maximum ratings. Types VRWMIO1(3) IFSMTJand TSTGV (pk) A dc A (pk) C 1N6826,
5、 1N6826US 100 (1) 3.0 60 65C to 200C 1N6831, 1N6831US 200 (2) 3.0 60 65C to 200C (1) Derate linearly at 60 mA/C above TLor TEC= +150C where TLis at L = .375 inch (9.52 mm). (2) Derate linearly at 60 mA/C above TLor TEC= +150C where TLis at L = .375 inch (9.52 mm). (3) Derate linearly at 43 mA/C abov
6、e TLor TEC= +130C where TLis at L = .375 inch (9.52 mm). AMSC N/A FSC 5961INCHPOUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 January 2014. Comments, suggestions, or questions on this document should be addressed to DLA Land and
7、 Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproducti
8、on or networking permitted without license from IHS-,-,-MILPRF19500/670A 2 1.4 Primary electrical characteristics. Unless otherwise specified, at TA= +25C. Types Max VFM1Max VFM2Max IRM VRWMpulsed method (see 4.5.1) Max CTVR= 5 V dc Max RJLor RJEC.375 inch (9.52 mm) Max ZJXIFM = 1.0 A IFM = 3.0 A TJ
9、= +25C IRM1TJ=+125C IRM2lead length or end cap V (pk) V (pk) A mA pF C/W C/W 1N6826 1N6826US 1N6831 1N6831US 0.76 0.76 0.83 0.83 0.84 0.84 0.92 0.92 5.0 5.0 3.0 3.0 0.25 0.25 0.20 0.20 100 100 60 60 30 10 30 10 3.0 3.0 3.0 3.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section
10、 are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are ca
11、utioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
12、 document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Metho
13、ds for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or
14、 in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot
15、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max LD .036 .042 0.91 1.07 BD .115 .145 2.92 3.68 3 BL .130 .195 3.30 4.95 LL .900 1.300 22.86 33.02 L1 .030 0.76 4 NOTES: 1. Dimensions are in inc
16、hes. 2. Metric equivalents are given for general information only. 3. Symbol BD shall be measured at the largest diameter. 4. Lead diameter is not controlled in this zone to allow for flash, lead finish build-up, and mirror irregularities other than heat slugs. FIGURE 1. Physical dimensions of 1N682
17、6 and 1N6831. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 4 Dimensions Symbol Inches Millimeters Min Max Min Max BL .200 .225 5.08 5.72 BD .137 .148 3.48 3.76 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches
18、. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions of surface mount family, 1N6826US and 1N6831US. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 5 (A-version) Dimensions Symbol Inches Mill
19、imeters Min Max Min Max A .058 .062 1.47 1.75 B .052 .055 1.32 1.40 Design data Metallization: Top (anode): AL Back (cathode): Ag AL thickness 25,000 minimum Ag thickness 30,000 minimum Chip thickness .011 .001 inch (0.279 0.025 mm) FIGURE 3. JANC die dimensions. Provided by IHSNot for ResaleNo repr
20、oduction or networking permitted without license from IHS-,-,-MILPRF19500/670A 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufac
21、tured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MILPRF1950
22、0. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions for the purpose of interchangeability shall be as specified in MILPRF19500 and figures 1, 2, and 3 herein. 3.4.1 Diode construction. These devices shall be constructed utilizing non-cavity doubl
23、e plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MILPRF19500). Metallurgical bond shall be in accordance with the requirements of category II in MILPRF19500. Surface mount devices shall be structurally identical to the non-s
24、urface mount devices except for lead terminations. 3.4.2 Lead finish. Unless otherwise specified, the lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3 Po
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