DLA DSCC-VID-V62 07633 REV B-2008 MICROCIRCUIT LINEAR 1 8 V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Change top side marking for device type 01, case outline 2 in section 6.3. -phn 08-07-09 Thomas M. Hess B Change thermal resistance for case Y and Z on table I. - phn 08-11-19 Thomas M. Hess Prepared in accordance with ASME Y14.24 Vendor item drawing REV PA
2、GE REV PAGE REV B B A REV STATUS OF PAGES PAGE 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Phu H. Nguyen DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO Original date of drawing YY MM DD CHECKED BY Phu H. Nguyen APPROVED BY Thomas M. Hess TITLE MICROCIRCUIT, LINEAR, 1.8 V, MICROPOWER CMOS OPERATIONAL A
3、MPLIFIERS ZERO-DRIFT SERIES, MONOLITHIC SILICON SIZE A CODE IDENT. NO. 16236 DWG NO. V62/07633 07-05-02 REV B PAGE 1 OF 10 AMSC N/A 5962-V006-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A COD
4、E IDENT NO. 16236 DWG NO. V62/07633 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance 1.8 V, micropower CMOS operational amplifiers zero-drift series microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Adminis
5、trative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/07633 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2)
6、(See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 OPA333A-EP 1.8 V, micropower CMOS operational amplifiers zero-drift series 02 OPA2333A-EP Dual, 1.8 V, micropower CMOS operational amplifiers zero-drift series 1.2.2 Case outline(s). The case outlines are as specified herein.
7、Outline letter Number of pins JEDEC PUB 95 Package style X 5 MO-178 Plastic small outline Y 5 MO-203 Plastic small outline Z 8 MO-012 Plastic small outline 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacture: Finish designator Ma
8、terial A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/07633 REV PAGE 3 1
9、.3 Absolute maximum ratings. 1/ Maximum supply voltage 7.0 V Signal input terminals, voltage . -0.3 V to (V+) + 0.3 V 2/ Output short circuit . Continuous 3/ Operating temperature range . -55C to 125C Storage temperature range -65C to 150C 4/ Maximum junction temperature 150C ESD rating: Human body
10、model . 4000 V Charged device model 1000 V 2. APPLICABLE DOCUMENTS JEDEC PUB 95 Registered and Standard Outlines for Semiconductor Devices (Applications for copies should be addressed to the Electronic Industry Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or at http:/www.jedec.org) 3. R
11、EQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with
12、 the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.4 Design, construction, and physical dimension.
13、 The design, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline. The case outline shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. 3.5.3 Logic diagram. The logic diagram shall be
14、as shown in figure 3. 1/ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is n
15、ot implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ Input terminals are diode clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less. 3/ Short circ
16、uit to ground, one amplifier per package. 4/ Long-term high temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of overall device life. See manufacturer data for additional information on enhanced plastic packaging. Provided by IHSNot for Res
17、aleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/07633 REV PAGE 4 TABLE I. Electrical performance characteristics. 1/ Limits Test Symbol Conditions 2/ unless otherwise specified Min Max Unit
18、 Offset Voltage Input offset voltage VOSVS= 5 10 V over temperature -55C TA 125C 22 V vs temperature dVOS/dT-55C TA 125C , VS = 1.8 V to 5.5 V 0.02 Typ V/C vs Power supply PSRR -55C TA 125C 6 V/V Long term stability 3/ 3/ Channel separation, dc 0.1 Typ V/V Input bias current Input bias current IB200
19、 pA over temperature -55C TA 125C 150 Typ pA Input offset current IOS400 pA Noise Input voltage noise f = 0.01 Hz to 1 Hz 0.3 Typ VPPInput voltage noise f = 0.1 Hz to 10 Hz 1.1 Typ VPPInput current noise inf = 10 Hz 100 Typ fA/ Hz Input voltage range Common mode voltage range VCM(V-)-0.1 (V+)+0.1 V
20、Common mode rejection ratio CMRR -55C TA 125C , (V-)-0.1 V VCM (V+)+0.1 V 102 dB Input capacitance Differential 2 Typ Common mode 4 Typ pF Open loop gain Open loop voltage gain AOL(V-)+100 mV VO (V+)-100 mV, RL= 10 k, -55C TA 125C 104 dB Frequency response Gain bandwidth product GBW CL= 100 pF 350 T
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