DLA DSCC-VID-V62 03639 REV A-2009 MICROCIRCUIT DIGITAL 3 3 V CMOS FIRST-IN FIRST-OUT MEMORIES MONOLITHIC SILICON.pdf
《DLA DSCC-VID-V62 03639 REV A-2009 MICROCIRCUIT DIGITAL 3 3 V CMOS FIRST-IN FIRST-OUT MEMORIES MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA DSCC-VID-V62 03639 REV A-2009 MICROCIRCUIT DIGITAL 3 3 V CMOS FIRST-IN FIRST-OUT MEMORIES MONOLITHIC SILICON.pdf(27页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Update boilerplate paragraphs to current requirements. - PHN 09-11-09 Thomas M. Hess Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV A A A A A A A A A A PAGE 18 19 20 21 22 23 24 25 26 27 REV STATUS OF PAGES REV A A A A A A A A A A
2、A A A A A A A PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PMIC N/A PREPARED BY Phu H. Nguyen DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43218-3990 Original date of drawing YY-MM-DD CHECKED BY Phu H. Nguyen TITLE MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICO
3、N 03-11-06 APPROVED BY Thomas M. Hess SIZE A CODE IDENT. NO. 16236 DWG NO. V62/03639 REV A PAGE 1 OF 27 AMSC N/A 5962-V005-10 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236
4、DWG NO. V62/03639 REV A PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identific
5、ation. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/03639 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). 1/ Device Memory organization Generic
6、number Circuit function 01 8192 x 18/ 16384 x 9 SN74V263 3.3 V CMOS first-in, first-out memories 02 16384 x 18/ 32768 x 9 SN74V273 3.3 V CMOS first-in, first-out memories 03 32768 x 18/ 65536 x 9 SN74V283 3.3 V CMOS first-in, first-out memories 04 65536 x 18/131072 x 9 SN74V293 3.3 V CMOS first-in,
7、first-out memories 1.2.2 Case outline(s). The case outlines are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 80 JEDEC MS-026 Plastic quad flatpack 1.2.3 Lead finishes. The lead finishes areas specified below or other lead finishes as provided by the device manufact
8、urer: Finish designator Material A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other 1.3 Absolute maximum ratings. 2/ Terminal voltage range with respect to GND, (VTERM) -0.5 V to + 4.5 V Continuous output current, (IO) (VO= 0 to VCC) . 50 mA Storage temperature
9、 range, (TSTG) -55C to +125C 1/ Users are cautioned to review the manufacturers data manual for additional user information relating to these devices. 2/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress ratings only, and function
10、al operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Provided by IHSNot for ResaleNo reproduction or networking per
11、mitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/03639 REV A PAGE 3 1.4 Recommended operating conditions. 3/ 4/ Supply voltage, (VCC) . +3.15 V to +3.45 V 5/ Supply voltage, (GND) . 0.0 V High level input voltage, (VIH) +2.0 V
12、 to 5.5 V 6/ Low level input voltage, (VIL) +0.8 V maximum Operating case temperature, (TC) -55C to +125C 7/ 2. APPLICABLE DOCUMENTS JEDEC PUB 95 Registered and Standard Outlines for Semiconductor Devices (Applications for copies should be addressed to the Electronic Industries Alliance, 2500 Wilson
13、 Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identifica
14、tion (optional) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3,
15、 1.4, and table I herein. 3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline(s). The case outline(s) shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connection
16、s shall be as specified on figure 2. 3.5.3 Block diagram. The block diagram shall be as specified on figure 3. 3.5.4 Load circuit. The load circuit shall be as specified on figure 4. 3.5.5 Timing waveforms. The timing waveforms shall be as specified on figure 5-21. 3/ Long term high temperature stor
17、age and/or extended use at maximum recommended operating conditions may result in a reduction of overall device life. See manufacturer information for additional information on enhanced plastic packaging. 4/ Use of this product beyond the manufacturers design rules or stated parameters is done at th
18、e users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. 5/ VCC= 3.3 V 0.15 V, JESD8-A compliant. 6/ Outputs are not 5-V tolerant. 7/ For derating information, please refer to manufacturer information. Provided by IHSNot for
19、 ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/03639 REV A PAGE 4 TABLE I. Electrical performance characteristics. 1/ Test Symbol Test conditions -55C TC +125C 3.15 V VCC 3.45 V unless
20、 otherwise specified Limits Unit Min Max High level output voltage VOHIOH= -2 mA 2.4 V Low level output voltage VOLIOL= 8 mA 0.4 V Input voltage IIVI= 0.4 V to VCC1 A Off state output current IOZOE VIH, VO = 0.4 V to VCC 10 A Supply current ICC1x9 input to x9 output 2/ 3/ 4/ 30 mA Supply current ICC
21、2X18 input to x18 output 2/ 3/ 4/ 35 mA Supply current ICC3Stand by, 2/ 5/ 15 mA Input capacitance CINVI= 0, TC= +25C, f = 1 MHz 10 pF Output capacitance COUTVO= 0, TC= +25C, f = 1 MHz Output deselected ( OE VIH) 10 pF Clock cycle frequency fCLOCKSee figure 5 to 21 6/ 133 MHz Data access time tA2 5
22、ns Clock cycle time tCLK7.5 ns Clock high time tCLKH3.5 ns Clock low time tCLKL3.5 ns Data setup time tDS2.5 ns Data hold time tDH0.5 ns Enable set up time tENS2.5 ns Enable hold time tENH0.5 ns Load set up time tLDS3.5 ns Load hold time tLDH0.5 ns Reset pulse duration 7/ tRS10 ns Reset setup time t
23、RSS15 ns Reset recovery time tRSR10 ns Reset to flag and output time tRSF15 ns Retransmit setup time tRTS3.5 ns Output enable to output in low impedance tOLZ0 ns Output enable to output valid tOE2 6 ns Output enable to output in high impedance tOHZ2 6 ns Write clock to FF or IR tWFF5 ns Read clock t
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLADSCCVIDV6203639REVA2009MICROCIRCUITDIGITAL33VCMOSFIRSTINFIRSTOUTMEMORIESMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-689073.html