DLA DSCC-DWG-01038 REV B-2008 SEMICONDUCTOR DEVICE PIN DIODE SILICON TYPE 1N5719 [Superseded DLA MIL-PRF-19500 443 B CANC NOTICE 2 DLA MIL-PRF-19500 443 B NOTICE 1 DLA MIL-PRF-1950.pdf

《DLA DSCC-DWG-01038 REV B-2008 SEMICONDUCTOR DEVICE PIN DIODE SILICON TYPE 1N5719 [Superseded DLA MIL-PRF-19500 443 B CANC NOTICE 2 DLA MIL-PRF-19500 443 B NOTICE 1 DLA MIL-PRF-1950.pdf》由会员分享，可在线阅读，更多相关《DLA DSCC-DWG-01038 REV B-2008 SEMICONDUCTOR DEVICE PIN DIODE SILICON TYPE 1N5719 [Superseded DLA MIL-PRF-19500 443 B CANC NOTICE 2 DLA MIL-PRF-19500 443 B NOTICE 1 DLA MIL-PRF-1950.pdf（9页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. 8 April 2002 Thomas M. Hess B Update lead finish, manufacturer information, editorial and format changes. 18 August 2008 Thomas M. Hess THE ORIGINAL FIRST PAGE OF TH

2、IS DRAWING HAS BEEN REPLACED. MIL-PRF-19500/443 has been canceled. This drawing may be used as a substitute. Prepared in accordance with ASME 14.100 Selected item drawing REV STATUS REV B B B B B B B B B OF PAGES PAGES 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMB

3、US COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsearch.aspOriginal date of drawing CHECKED BY Jason Hochstetler TITLE 10 September 2001 SEMICONDUCTOR DEVICE, PIN DIODE, SILICON, TYPE 1N5719 APPROVED BY Thomas M. Hess SIZE CODE IDENT. NO. DWG NO. A 037Z3 01038 PAGE 1 OF 9 AMSC N/A 5961-E08

4、3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 Scope. This drawing covers the detail requirements for a silicon pin diode. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. This drawing m

5、ay be used as a substitute for MIL-PRF-19500/443, which has been canceled (see 6.3). 1.2 Part or Identifying Number (PIN). The complete PIN shall be as follows: 01038 - 1N5719 NONTX, TX | | | | | | Drawing number Device Quality level type 1.2.1 Device types. The device type shall be as follows: Devi

6、ce type Figure number 01038-1N5719 1 01038-1N5719TX 1 1.2.2 Ratings. VRWM working VRM non-repetitive PT(1) TOPand TSTGRJCV (pk) DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 2 100 V (pk) 150 mW 250 C -65 to +150C/W 500 (1) Derate 2.0 mA/C above 2

7、5C. 1.3 Primary electrical characteristics at TA= +25C, unless otherwise indicated. Limits V(BR)IR= 10 A dc RSIF= 100 mA dc 100 MHz CVRVR= 100 V dc 100 kHz f 1 MHz CLIF= 50 mA dc IR= 250 mA dc V dc pF ns Minimum 150 100 Maximum .35 1.25 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in th

8、is section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document us

9、ers are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS

10、, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 3 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these

11、documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at h

12、ttp:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publ

13、ications form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. C68001 - Test Fixture For Effective Minority Carrier Lifetime. (Copies of the above drawing are available from Defense Supp

14、ly Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990). 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable la

15、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

16、specified in MIL-PRF-19500. CVRTotal capacitance with reverse bias. CLEffective carrier lifetime. PFMPeak forward power dissipation. RSResidual series resistance. 3.3 Interface and physical dimensions. Interface and physical dimensions shall be as specified on figure 1. 3.3.1 Lead finish. Lead finis

17、h shall be gold, solder, or tin-lead in accordance with MIL-PRF-19500. Where a choice of lead material or finish is desired, it shall be specified in the contract or order. Tin content of components and solder shall not exceed 97 percent, by mass. Tin shall be alloyed with a minimum of 3 percent lea

18、d, by mass. Pure tin shall not be used as an undercoat. 3.3.2 Polarity. The polarity shall be indicated by a contrasting color band to denote the cathode end. 3.4 Performance characteristics. Performance characteristics shall be in accordance with tables I and II. 3.5 Marking. The marking shall be i

19、n accordance with MIL-PRF-19500. Part marking shall be 01038-1N5719 (non-screened) or 01038-1N5719TX (screened), but marking may be reduced to 38N5719 or 38N5719X, respectively. It is not necessary that marking be on one line. No color coding for part number shall be permitted. Complete marking shal

20、l include part number, manufacturers identification, Commercial and Government Entity (CAGE) code, and lot date code shall be included on the initial packaging. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS,

21、 OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 4 3.6 Manufacturer eligibility. To be approved to supply devices to this drawing, the manufacturer shall supply a certificate of compliance to DSCC and then perform conformance inspection in accordance with procuring activitys requested firs

22、t article testing requirements in accordance with 4.3 herein. Devices specified herein shall meet traceability and lot formation requirements of MIL-PRF-19500 except as modified by the procuring activity. 3.7 Submission of certificate of compliance. A certificate of compliance shall be required from

23、 a manufacturer in order to be listed as an approved source of supply in 6.5. The certificate of compliance submitted to DSCC-VAC, prior to listing as a source of supply in 6.5, shall state that the manufacturers product meets the applicable requirements of MIL-PRF-19500 and the requirements herein.

24、 3.8 Certificate of conformance. A certificate of conformance shall be included with each shipment of devices delivered to the customer. 3.9 Recycled, recovered, or environmentally preferable materials. Recycled, recovered or environmentally preferable materials should be used to the maximum extent

25、possible provided that the material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.10 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability or appearance. 4

26、. VERIFICATION 4.1 Sampling and inspection. Unless otherwise specified, sampling and inspection procedures shall be performed in accordance with MIL-PRF-19500 and as specified herein. 4.2 Conformance inspection. Conformance inspection shall consist of the examinations and tests specified in groups A

27、 and B herein. 4.2.1 Group A inspection. Group A inspection shall consist of the inspections and tests specified in table I. 4.2.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in 4.2.2.1 herein. Electrical measurements (en

28、d-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.2.2.1 Group B inspection, table E-VIb (non-TX, TX) of MIL-PRF-19500. Subgroup Method Condition B2 1056 Test condition A. B3 1027

29、IO= 50 mA dc minimum, VR= 120 V(pk), f = 60 Hz. TA= room ambient as defined in the general requirements of MIL-STD-750, minimum, TJ= 150C minimum. B5 Not applicable. B6 1032 TA= 150 C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CE

30、NTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 5 4.3 Screening (TX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that ex

31、ceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) TX levels 9 Not applicable 11 IR1, VF112 See 4.3.1 13 Subgroup 2 of table I herein; IR1= 100 percent of initial value or 250 nA dc, whichever is greater VF1= 100 mV (peak) 4.3.1 Power burn

32、-in conditions. Power burn-in conditions are as follows: TA= room ambient as defined in the general requirements of MIL-STD-750, minimum, IO= 50 mA dc, VR= 120 V(pk), f = 60 Hz. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables. 4.4.1 Pulse measurements

33、. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.4.2 Effective carrier lifetime (CL). Carrier lifetime may be measured using any of the following methods. 4.4.2.1 Reverse recovery time method. This test shall be conducted in accordance with method 4031 of MIL-S

34、TD-750, condition B with the device installed in the test fixture, drawing C68001 or equivalent. The test parameters shall be: IF = 50 mA, Ir = 30 mA, I(rec)= 3 mA. 4.4.2.2 Stored charge meter method. A pulse from a 20 kHz 200 Hz pulse generator and forward bias from a power supply shall be applied

35、to the diode under test. Reverse current shall be 250 mA dc and forward bias shall be 50 mA dc. Read voltage on digital voltmeter and divide by 100 ohms to obtain average reverse current. Divide average reverse current by the product of pulse repetition frequency and bias current to obtain carrier l

36、ifetime (or equivalent) (see figure 2). 4.4.2.3 Stored charge meter method. Stored charge meter method (using commercial meter). Determine stored charge using meter manufacturers instructions and a forward bias of 50 mA dc. Calculate the carrier lifetime by dividing the stored charge (coulombs) by t

37、he forward bias (amperes). 4.4.3 Series resistance (RS). This test shall be performed utilizing an appropriate impedance analyzer such as the Hewlett Packard Model 4191A (or equivalent) or a vector network analyzer such as the Hewlett Packard Model 8753B (or equivalent). Provided by IHSNot for Resal

38、eNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechani

39、cal examination 2071 Subgroup 2 Forward voltage 4011 IF= 100 mA dc VF11.0 V dc Reverse current 4016 DC method; VR= 100 V dc IR1250 nA dc Breakdown voltage 4021 IR= 10 A dc V(BR)1150 V dc Subgroup 3 High temperature operation TA= +150C Reverse current 4016 DC method; VR= 100 V dc IR215 A dc Low tempe

40、rature operation TA= -55C Forward voltage 4011 IF= 100 mA dc VF21.15 V dc Breakdown voltage 4021 IR= 10 A dc V(BR)2150 V dc Subgroup 4 Capacitance 4001 VR= 100 V dc; 100 kHz f 1 MHz C 0.3 pF Subgroups 5 and 6 Not applicable Subgroup 7 Series resistance IF= 100 mA dc 100 kHz f 1 MHz RS1.25 Effective

41、carrier lifetime IF= 50 mA dc (see 4.4.2) CL100 ns 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE II. Groups B delta measurements. MIL-STD-750 Limits Step Inspection Method Conditions Symbol Min Max Uni

42、t 1. Forward voltage 4011 IF= 100 mA dc 100 mV dc maximum VF12. Reverse current DC method 20 percent of initial value or 50 nA dc (whichever is greater) change from initial group A reading. VR= 100 V dc V(BR)1Dimensions Inches Millimeters Ltr Min Max Min Max Notes BD .045 .076 1.14 1.93 3 BL .100 .1

43、70 2.54 4.32 3 LD .014 .016 0.36 0.41 4 LL .975 1.5 24.77 38.10 NOTES: 1. Dimensions are in inches. 2. Millimetersare given for general information only. 3. Package contour optional within BD and BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit

44、 BD. 4. Within this zone, lead diameter may vary to allow lead finishes and irregularities other than heat slugs. 5. The cathode shall be indicated by a contrasting color band. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions 1N5719. DEFENSE S

45、UPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01038 REV B PAGE 7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTE: D1and D2are 1N4456 high conductive diodes, or equivalent. D3is HP 5082-2835, or equivalent. FIGURE 2. S

46、tored charge meter method. 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible

47、 packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging activities within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing

48、Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. Devices conforming to

49、this drawing are intended for use when performance specifications do not exist and qualified performance devices that will perform the required function are not available for OEM application. This drawing is intended exclusively to prevent the proliferation of duplicate specifications, drawings, and stock nu