DLA DSCC-DWG-01037 REV A-2006 SEMICONDUCTOR DEVICE DIODE SILICON MIXER 1N23WE 1N23WEM AND 1N23WEMR 1N23WG 1N23WGM AND 1N23WGMR《1N23WE型 1N23WEM型和1N23WEMR 1N23WG型 1N23WGM和1N23WGMR型 混.pdf

《DLA DSCC-DWG-01037 REV A-2006 SEMICONDUCTOR DEVICE DIODE SILICON MIXER 1N23WE 1N23WEM AND 1N23WEMR 1N23WG 1N23WGM AND 1N23WGMR《1N23WE型 1N23WEM型和1N23WEMR 1N23WG型 1N23WGM和1N23WGMR型 混.pdf》由会员分享，可在线阅读，更多相关《DLA DSCC-DWG-01037 REV A-2006 SEMICONDUCTOR DEVICE DIODE SILICON MIXER 1N23WE 1N23WEM AND 1N23WEMR 1N23WG 1N23WGM AND 1N23WGMR《1N23WE型 1N23WEM型和1N23WEMR 1N23WG型 1N23WGM和1N23WGMR型 混.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE RE

2、V STATUS OF PAGES REV A A A A A A A A A A A PAGES 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsearch.asp Original date of drawing CHECKED BY Jason Hochstetler TITLE APPROVED BY Thomas M. Hess SEMICO

3、NDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N23WE, 1N23WEM AND 1N23WEMR 1N23WG, 1N23WGM AND 1N23WGMR 1 June 2001 SIZE A CODE IDENT. NO. 037Z3 DWG NO. 01037 REV A PAGE 1 OF 11 AMSC N/A 5961-E080 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPP

4、LY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 2 1. SCOPE 1.1 Scope. This drawing covers the performance requirements for a silicon point contact semiconductor diode for use as single units, matched forward pairs, and matched forward and reverse pairs as a mi

5、xer in X-band equipment. This drawing may be used as a substitute for MIL-S-19500/322 which has been inactivated (see 6.3). 1.2 Part or Identifying Number (PIN). An example of the complete PIN shall be as follows: 01037 - 1N23WE | | Drawing number Device 1.2.1 Device types. The device type shall ide

6、ntify the polarity and voltage of the devices as follows: Device type Figure number Device type Figure number 01037-1N23WE 1 01037-1N23WG 1 01037-1N23WEM 01037-1N23WGM 01037-1N23WEMR 1 01037-1N23WGMR 1 1.2 Ratings. 1N23WE 1N23WG 1/G LNSWR ratio TSTGand TOPMin Max dB 7.5 dB 6.5 ohms 335 465 dB 6.0 ra

7、tio 1.4 1.3 -65C to +150C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as exampl

8、es. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, s

9、tandards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-19500 -

10、Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk

11、, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified, the issues of t

12、hese documents are those cited in the solicitation or contract. D65019 DEFENSE ELECTRONICS SUPPLY CENTER, TEST HOLDER FOR MICROWAVE DIODES, TYPE 1N23. (DEFENSE SUPPLY CENTER, COLUMBUS, DSCC-VAC, P.O.Box 3990, Columbus, OH 43218-3990).Provided by IHSNot for ResaleNo reproduction or networking permitt

13、ed without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 3 2.3 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of thes

14、e documents are those cited in the solicitation or contract. ASTM-B16/B16M-05 ROD, BRASS, FREE-CUTTING, BAR AND SHAPES FOR USE IN SCREW MACHINES. (Application for copies should be addressed to - AMERICAN SOCIETY for TESTING and MATERIALS, 100 Barr Harbor Drive, West Conshohocken PA 19428-2959). 2.4

15、Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS

16、3.1 General. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. and as follows: 1/G Reciprocal of conductance (IF

17、 impedance). SWR Standing wave ratio. 3.3 Interface and physical dimensions. The semiconductor diode shall be of symmetrical construction and shall consist of a cylindrical body having pins on both ends. The body outline with removable base adapter shall conform to figure 1. Organic package sealants

18、 may be used at the option of the manufacturer. 3.3.1 Base adapter. The base adapter shall be of the design, construction, and physical dimensions shown on figure 2. 3.3.2 Plating. The diode and base adapter shall be plated as specified on figures 1 and 2. 3.4 Performance characteristics. Performanc

19、e characteristics shall be in accordance with tables I and II. 3.5 Marking. The marking shall be placed on each device in accordance with MIL-PRF-19500 except that the manufacturers identification and country of origin may be omitted. 3.5.1 Matched diodes. The “M“ suffix for matched diodes shall be

20、omitted in the type designation on each device. Diodes meeting the matching requirements of this drawing will be packaged with a statement to that effect (see 4.4.2 and 4.4.3). 3.6 Manufacturer eligibility. To be eligible to supply devices to this drawing, the manufacturer shall perform conformance

21、inspection in accordance with procuring activitys requested first article testing requirements in accordance with 4.3 herein. Devices specified herein shall meet traceability and lot formation requirements of MIL-PRF-19500, except as modified by the procuring activity. 3.7 Submission of certificate

22、of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as a source of supply in 6.5. The certificate of compliance submitted to DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990 prior to listing as a source of supply in 6.5, shall state that the manufac

23、turers product meets the applicable requirements of MIL-PRF-19500 and the requirements herein. 3.8 Certificate of conformance. A certificate of conformance shall be provided with each lot of devices delivered in accordance with this drawing. 3.9 Recycled, recovered, or environmentally preferable mat

24、erials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that the material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.10 Workmanship. The semiconductor sh

25、all be uniform in quality and free from any defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A P

26、AGE 4 4. VERIFICATION 4.1 Sampling and inspection. Unless otherwise specified, sampling and inspection shall be performed in accordance with MIL-PRF-19500, and as specified herein. 4.1.1 Structurally similar device types. Types 1N23WE and 1N23WG are structurally similar devices. Any type herein may

27、be sampled for group C inspections in this drawing to accept all for quality conformance inspection. 4.2 Test conditions. Unless otherwise specified herein, the test conditions, when applicable, shall be as follows: P = 1.0 mW 5 percent. Nif 1.5 dB. RL= 100 1. f = 9375 5 MHz. Zm= 400 10. Holder - DE

28、SC Drawing D65019 or equivalent. 4.2.1 Holder. The diode holder, DSCC Drawing D65019 or equivalent, shall be used for all electrical test measurements. 4.3 Conformance inspection. Conformance inspection shall consist of the inspections and tests specified in groups A and B herein. 4.3.1 Group A insp

29、ection. Group A inspection shall consist of the inspections and tests specified in table I. 4.3.2 Group B inspection. Group B inspection shall consist of the inspections and tests specified in table II. 4.4 Methods of inspections and tests. Methods of inspections and tests shall be as specified in t

30、he appropriate tables and as follows: 4.4.1 High-temperature operation. The semiconductor diode shall be placed in the mixer holder. The ambient temperature of the diode, with test conditions specified for the overall noise figure, shall be raised to +150C and maintained at this temperature until eq

31、uilibrium is reached. The Fom shall then be determined and shall be less than the specified maximum limit. The temperature shall then be returned to 25 3C at which time Fomshall be less than the specified maximum limit. 4.4.2 Matched pair “M“ suffix (forward polarity). The matched pair (M suffix) sh

32、all consist of two diodes, tested to requirements of subgroup 3, table I, having the anode connected to the adapter. 4.4.3 Matched pair “MR“ suffix (forward and reverse polarity). The matched forward and reverse pair (MR suffix) shall consist of two diodes, tested to requirements of subgroup 3, tabl

33、e l: one diode having the anode connected to the adapter (forward polarity) and the second diode having the cathode connected to the adapter (reverse polarity). 4.4.4 Time limit for end-points. End-point tests for qualification and quality conformance inspection shall be completed within 96 hours af

34、ter completion of the last test in the subgroup. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 5 Dimensions Inches Millimeters Notes Ltr Min Max Min

35、 Max A .800 .840 20.32 21.34 B .292 .296 7.42 7.52 C .246 .250 6.25 6.35 D .766 .792 19.46 20.12 E .180 .190 4.57 4.83 6 F .195 .199 4.95 5.05 G .047 .057 1.19 1.45 H .222 .240 5.64 6.10 J .195 .215 4.90 5.46 6 K .092 .094 2.34 2.39 2, 6, 7 L .030 .046 .76 1.17 6 Q .020 .030 .51 .76 6 R .030 .76 6 N

36、OTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. The ends of both pins shall be smooth with no burrs or sharp edges. Within the diameter R, a recess is allowed on both ends of the pins. 3. Metal parts shall be plated 10 msi minimum. 4. The polarity shall be i

37、ndicated by an arrow, with the arrow pointing in the direction of easier current flow. 5. Removable base adapter shall establish the forward or reverse polarity. 6. Applies to both pins. 7. Eccentricity between both pins and the base dimension C should not exceed .0075 inch (0.1905 mm). 8. Metal par

38、ts shall be gold plated 10 msi minimum. FIGURE 1. Semiconductor device, diode types 1N23WE, 1N23WEM, 1N23WEMR, 1N23WG, 1N23WGM, and 1N23WGMR. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE I

39、DENT NO. 037Z3 DWG NO. 01037 REV A PAGE 6 Dimensions Inches Millimeters Ltr Min Max Min Max A .242 .256 6.15 6.50 B .292 .296 7.42 7.52 C .246 .250 6.25 6.35 D .187 4.75 E .100 2.54 F .195 .199 4.95 5.05 G .0915 .0920 2.32 2.34 H .0940 .0945 2.39 2.40 J .216 .221 5.49 5.61 K .031 .036 .79 .91 NOTES:

40、 1. Dimensions are in inches. Millimeters are given for general information only. 2. This diameter should be .100 inch (2.54 mm) max diameter before closing jaws. This diameter shall then be sufficiently closed and the adapter so tempered that it will fit on the minimum gage rod and maximum gage rod

41、, in each case with a snug fit (for hand assembly). 3. Each slot shall be .013 inch (.330 mm) min, .017 inch (.132 mm) max wide by .185 inch (4.70 mm) deep before closing. The six slots are equally spaced. 4. The material for the adapter shall be brass in accordance with ASTM-B16/B16M, or equivalent

42、. 5. Metal parts shall be gold plated 10 msi minimum. 6. All burrs and sharp edges shall be removed. FIGURE 2. Removable base adapter, included as a part of types 1N23WE, 1N23WEM, 1N23WEMR, 1N23WG, 1N23WGM, and 1N23WGMR. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

43、cense from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Voltage standing wa

44、ve ratio (see 4.2) 4136 I = 1.0 mAdc VSWR 1.3 ratio Intermediate frequency conductance (see 4.2) 4116 f = 60 - 2000 Hz 1/G 335 465 ohms Overall noise figure (see 4.4.1) 1N23WE, 1N23WEM, 1N23WEMR 1N23WG, 1N23WGM, 1N23WGMR 4126 Test condition A Fom7.5 6.5 dB dB Subgroup 3 Matched pair requirements (se

45、e 4.4.2 and 4.4.3) Conversion loss unbalance 4101 L0.3 dB Intermediate frequency conductance unbalance 4116 1/G 25 ohms 1/ See notes on next page. * TABLE I. Group B inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 - Continued Physical dimensions 2066 See

46、figures 1 and 2 Subgroup 2 Thermal shock (temperature cycling) 1051 Test condition F; T(high)= +150C +5C, -0C Terminal strength: Tension 2036 Test condition A; 1 lb; t = 30 sec Torque 2036 Test condition D1; t = 30 sec Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

47、nse from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE

48、A CODE IDENT NO. 037Z3 DWG NO. 01037 REV A PAGE 9 * TABLE II. Group B inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 2 - Continued Moisture resistance 1021 Omit initial conditioning End-points: Overall (average) noise figure (see 4.4.1) 4126 Test condition A Fom1N23WE, 1N23WEM, 1N23WEMR 8.5 dB 1N23WG, 1N23WGM, 1N23WGMR 7.5 dB Subgroup 3 Shock 2016 500 G; t 1 ms 5 blows in each orientation: X1, Y1, and Y2Vibration, variable frequency 2056 15 G; 50 to 2,000 cps End-points: (same as for group A, subgroup 2) Subgroup 4 High tem