BS EN 60747-16-1-2002+A1-2007 Semiconductor ndevices — nPart 16-1 Microwave integrated ncircuits — Amplifiers《半导体器件 微波集成电路 放大器》.pdf

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1、BRITISH STANDARD BS EN 60747-16-1:2002 +A1:2007 Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers ICS 31.080.99; 31.200 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSIBS EN 60747-16-1:2002+A1:2007 This British Standard was p

2、ublished under the authority of the Standards Policy and Strategy Committee on 18 March 2002 BSI 2008 ISBN 978 0 580 62540 4 National foreword This British Standard is the UK implementation of EN 60747-16-1:2002+A1:2007. It is identical with IEC 60747-16-1:2001, incorporating amendment 1:2007. It su

3、persedes BS EN 60747-16-1:2002 which is withdrawn. The start and finish of text introduced or altered by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by !“. The UK part

4、icipation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible

5、for its correct application. Compliance with a British Standard cannot confer immunity from legal obligations. Amendments/corrigenda issued since publication Date Comments 30 April 2008 Implementation of IEC amendment 1:2007 with CENELEC endorsement A1:2007 Licensed Copy: Wang Bin, ISO/EXCHANGE CHIN

6、A STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSIEUROPEAN STANDARD EN 60747-16-1 NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretaria

7、t: rue de Stassart 35, B - 1050 Brussels 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-1:2002 E ICS 31.080.99 English version Semiconductor devices Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-1

8、6-1:2001) Dispositifs semiconducteurs Partie 16-1: Circuits intgrs hyperfrquences - Amplificateurs (CEI 60747-16-1:2001) Halbleiterbauelemente Teil 16-1: Integrierte Mikrowellen- Verstrker (IEC 60747-16-1:2001) This European Standard was approved by CENELEC on 2002-02-01. CENELEC members are bound t

9、o comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Centr

10、al Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same sta

11、tus as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. Februar

12、y 2007:2002+A1 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSIForeword The text of document 47E/200/FDIS, future edition 1 of IEC 60747-16-1, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to

13、the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-16-1 on 2002-02-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002-11-01 latest date by which the n

14、ational standards conflicting with the EN have to be withdrawn (dow) 2005-02-01 Annexes designated “normative“ are part of the body of the standard. In this standard, annex ZA is normative. _ Endorsement notice The text of the International Standard IEC 60747-16-1:2001 was approved by CENELEC as a E

15、uropean Standard without any modification. _ Foreword to amendment A1 The text of document 47E/305/FDIS, future amendment 1 to IEC 60747-16-1:2001, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved

16、 by CENELEC as amendment A1 to EN 60747-16-1:2002 on 2007-02-01. The following dates were fixed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2007-11-01 latest date by which the national standards

17、conflicting with the amendment have to be withdrawn (dow) 2010-02-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of amendment 1:2006 to the International Standard IEC 60747-16-1:2001 was approved by CENELEC as an amendment to the European Standard without any modification. _ Pa

18、ge 2 BS EN 60747-16-1:2002+A1:2007 BSI 2008 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSICONTENTS 1 Scope 5 2 Normative references. 5 3 Terminology. 6 4 Essential ratings and characteristics 8 4.1 General 8 4.2 Application related description 9 4

19、.3 Specification of the function.10 4.4 Limiting values (absolute maximum rating system) 11 4.5 Operating conditions (within the specified operating temperature range)13 4.6 Electrical characteristics13 4.7 Mechanical and environmental ratings, characteristics and data 15 4.8 Additional information1

20、5 5 Measuring methods 16 5.1 General .16 5.2 Linear (power) gain (G lin ).16 5.3 Linear (power) gain flatness ( G lin )18 5.4 Power gain (G p ).19 5.5 (Power) gain flatness ( G p ) .19 5.6 (Maximum available) gain reduction ( G red ).20 5.7 Limiting output power (P o(ltg) ) 21 5.8 Output power (P o

21、)22 5.9 Output power at 1 dB gain compression (P o(1dB) ).23 5.10 Noise figure (F)24 5.11 26 5.12 Power at the intercept point (for intermodulation products) (P n(IP) ).28 5.13 .29 5.14 30 5.15 .34 5.16 Conversion coefficient of amplitude modulation to phase modulation ( (AM-PM) ) 35 5.17 Group dela

22、y time (t d(grp) ) .37 5.18 Power added efficiency38 5.19 .40 5.20 Output noise power (P N ) .41 5.21 43 Page 3 Intermodulation distortion (two-tone) (P 1 /P n ) Magnitude of the input reflection coefficient (input return loss) (|S 11 |) Magnitude of the output reflection coefficient (output return

23、loss) (|S 22 |) Magnitude of the reverse transmission coefficient (isolation) (|S 12 |) nth order harmonic distortion ratio (P 1 /P nth ) Spurious intensity under specified load VSWR (P o /P sp ) 5.22 Adjacent channel power ratio (P o(mod)/P adj ) .45 BS EN 60747-16-1:2002+A1:2007 BSI 2008 Licensed

24、Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSIFigure 1 Circuit for the measurements of linear gain.16 Figure 2 Basic circuit for the measurement of the noise figure24 Figure 3 Basic circuit for the measurements of two-tone intermodulation distortion 26 Fig

25、ure 4 Circuit for the measurements of magnitude of input/output reflection coefficient (input/output return loss) 29 Figure 5 Circuit for the measurement of output reflection coefficient.32 Figure 6 Circuit for the measurement of isolation34 Figure 7 Basic circuit for the measurement of (AM-PM) 35 F

26、igure 8 Circuit for the measurement of the power added efficiency.38 Figure 9 Circuit for the measurements of the nth order harmonic distortion ratio 40 Figure 10 Circuit diagram for the measurement of the output noise power42 Figure 11 Circuit diagram for the measurement of the spurious intensity 4

27、4 Annex ZA (normative) Normative references to international publications with their corresponding European publications56 6 Verifying methods 6.1 Load mismatch tolerance ( L ) 6.2 Source mismatch tolerance ( S ) 6.3 Load mismatch ruggedness ( R ) .48 48 .51 54 Figure 12 Circuit for the measurement

28、of the adjacent channel power ratio Figure 13 Circuit for the verification of load mismatch tolerance in method 1 Figure 14 Circuit for the verification of load mismatch tolerance in method 2 Figure 15 Circuit for the verification of source mismatch tolerance in method 1 Figure 16 Circuit for the ve

29、rification of source mismatch tolerance in the method 2 Figure 17 Circuit for the verification of load mismatch ruggedness 46 49 50 52 53 .54 Page 4 BS EN 60747-16-1:2002+A1:2007 BSI 2008 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSISEMICONDUCTOR

30、 DEVICES Part 16-1: Microwave integrated circuits Amplifiers 1 Scope This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers. 2 Normative references The following normative document

31、s contain provisions which, through reference in this text, constitute provisions of this part of IEC 60747. For dated references, subsequent amend- ments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this part of IEC 60747 are encouraged to inv

32、estigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60747-7:2000,

33、Semiconductor devices Part 7: Bipolar transistors IEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integrated circuits IEC 60748-3:1986, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4:1997, Semiconductor devices Integrated circui

34、ts Part 4: Interface integrated circuits IEC 60617:2001, Graphical symbols for diagrams IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-4:-, Semiconductor devices Discrete devices Part 4: Microwave diodes and transistors 1IEC 60747-16-2:2001, Semiconductor devices Part 16-2: Microw

35、ave integrated circuits Frequency prescalers IEC 60747-16-4:2004, Semiconductor devices Part 16-4: Microwave integrated circuits Switches ! 1The second edition of IEC 60747-4, which is cited in this standard, and to which terms introduced in this amendment refer, is currently in preparation (ADIS).

36、! “ Page 5 BS EN 60747-16-1:2002+A1:2007 BSI 2008 “ IEC/TS 61340-5-1:1998, Electrostatics - Part 5-1: Protection of electronic devices from electrostatic phenomena - General requirements IEC/TS 61340-5-2:1999, Electrostatics - Part 5-2: Protection of electronic devices from electrostatic phenomena -

37、 User guide “ ! “ ! Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSI3 Terminology 3.1 linear (power) gain G lin power gain in the linear region of the power transfer curve P o (dBm) = f(P i ) NOTE In this region, P o (dBm) = P i (dBm). 3.2 linear (p

38、ower) gain flatness G lin power gain flatness when the operating point lies in the linear region of the power transfer curve 3.3 power gain G p G ratio of the output power to the input power NOTE Usually the power gain is expressed in decibels. 3.4 (power) gain flatness G p difference between the ma

39、ximum and minimum power gain for a specified input power in a specified frequency range 3.5 (maximum available) gain reduction G red difference in decibels between the maximum and minimum power gains that can be provided by the gain control 3.6 Output power limiting 3.6.1 output power limiting range

40、 range in which, for rising input power, the output power is limiting NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values for the input power. 3.6.2 limiting output power P o(ltg) output power in the range where it is limiting 3.6.3 limit

41、ing output power flatness P o(ltg) difference between the maximum and minimum output power in the output power limiting range: P o(ltg)= P o(ltg,max) P o(ltg,min) 3.7 intermodulation distortion P 1 /P nratio of the fundamental component of the output power to the nth order component of the output po

42、wer, at a specified input power ! “ Page 6 BS EN 60747-16-1:2002+A1:2007 BSI 2008 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 06:51, Uncontrolled Copy, (c) BSI3.8 power at the intercept point (for intermodulation products) P n(IP) output power at intersection between the extrap

43、olated output powers of the fundamental component and the nth order intermodulation components, when the extrapolation is carried out in a diagram showing the output power of the components (in decibels) as a function of the input power (in decibels) 3.9 magnitude of the input reflection coefficient

44、 (input return loss) |S 11 | see 3.5.2.1 of IEC 60747-7 3.10 magnitude of the output reflection coefficient (output return loss) |S 22 | see 3.5.2.2 of IEC 60747-7 3.11 magnitude of the reverse transmission coefficient (isolation) |S 12 | see 3.5.2.4 of IEC 60747-7 3.12 conversion coefficient of amp

45、litude modulation to phase modulation (AM-PM) quotient of the phase deviation of the output signal (in degrees) by the change in input power (in decibels) producing it 3.13 group delay time t d(grp) ratio of the change, with angular frequency, of the phase shift through the amplifier NOTE Usually gr

46、oup delay time is very close in value to input-to-output delay time. 3.14 nth order harmonic distortion ratio P 1 /P nthratio of the power of the fundamental frequency measured at the output port of the device to the power of the nth order harmonic component measured at the output port for a specifi

47、ed output power 3.15 output noise power P N maximum noise power measured at the output port of the device within a specified bandwidth in a specified frequency range for a specified output power 3.16 spurious intensity under specified load VSWR P o /P spratio of the power of the fundamental frequenc

48、y measured at the output port of the device to the maximum spurious power measured at the output port under specified load VSWR 3.17 output power P osee 3.3 of IEC 60747-16-2 ! “ ! “ ! “ Page 7 BS EN 60747-16-1:2002+A1:2007 BSI 2008 Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 29/07/2008 0

49、6:51, Uncontrolled Copy, (c) BSI4 Essential ratings and characteristics 4.1 General 4.1.1 Circuit identification and types 4.1.1.1 Designation and types The indication of type (device name), the category of the circuit and the technology applied should be given. Microwave amplifiers are divided into four categories: Typ