IEC 60747-7-2010 Semiconductor devices - Discrete devices - Part 7 Bipolar transistors《半导体器件.分立器件.第7部分 双极晶体管》.pdf

《IEC 60747-7-2010 Semiconductor devices - Discrete devices - Part 7 Bipolar transistors《半导体器件.分立器件.第7部分 双极晶体管》.pdf》由会员分享，可在线阅读，更多相关《IEC 60747-7-2010 Semiconductor devices - Discrete devices - Part 7 Bipolar transistors《半导体器件.分立器件.第7部分 双极晶体管》.pdf（214页珍藏版）》请在麦多课文档分享上搜索。

1、 IEC 60747-7 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 7: Bipolar transistors Dispositifs semiconducteurs Dispositifs discrets Partie 7: Transistors bipolaires IEC 60747-7:2010 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2010 IE

2、C, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or IECs member National Committ

3、ee in the country of the requester. If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or your local IEC member National Committee for further information. Droits de reproduction rservs. Sauf indica

4、tion contraire, aucune partie de cette publication ne peut tre reproduite ni utilise sous quelque forme que ce soit et par aucun procd, lectronique ou mcanique, y compris la photocopie et les microfilms, sans laccord crit de la CEI ou du Comit national de la CEI du pays du demandeur. Si vous avez de

5、s questions sur le copyright de la CEI ou si vous dsirez obtenir des droits supplmentaires sur cette publication, utilisez les coordonnes ci-aprs ou contactez le Comit national de la CEI de votre pays de rsidence. IEC Central Office 3, rue de Varemb CH-1211 Geneva 20 Switzerland Email: inmailiec.ch

6、Web: www.iec.ch About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standards for all electrical, electronic and related technologies. About IEC publications The technical content of IEC publications is kept u

7、nder constant review by the IEC. Please make sure that you have the latest edition, a corrigenda or an amendment might have been published. Catalogue of IEC publications: www.iec.ch/searchpub The IEC on-line Catalogue enables you to search by a variety of criteria (reference number, text, technical

8、committee,). It also gives information on projects, withdrawn and replaced publications. IEC Just Published: www.iec.ch/online_news/justpub Stay up to date on all new IEC publications. Just Published details twice a month all new publications released. Available on-line and also by email. Electroped

9、ia: www.electropedia.org The worlds leading online dictionary of electronic and electrical terms containing more than 20 000 terms and definitions in English and French, with equivalent terms in additional languages. Also known as the International Electrotechnical Vocabulary online. Customer Servic

10、e Centre: www.iec.ch/webstore/custserv If you wish to give us your feedback on this publication or need further assistance, please visit the Customer Service Centre FAQ or contact us: Email: csciec.ch Tel.: +41 22 919 02 11 Fax: +41 22 919 03 00 A propos de la CEI La Commission Electrotechnique Inte

11、rnationale (CEI) est la premire organisation mondiale qui labore et publie des normes internationales pour tout ce qui a trait llectricit, llectronique et aux technologies apparentes. A propos des publications CEI Le contenu technique des publications de la CEI est constamment revu. Veuillez vous as

12、surer que vous possdez ldition la plus rcente, un corrigendum ou amendement peut avoir t publi. Catalogue des publications de la CEI: www.iec.ch/searchpub/cur_fut-f.htm Le Catalogue en-ligne de la CEI vous permet deffectuer des recherches en utilisant diffrents critres (numro de rfrence, texte, comi

13、t dtudes,). Il donne aussi des informations sur les projets et les publications retires ou remplaces. Just Published CEI: www.iec.ch/online_news/justpub Restez inform sur les nouvelles publications de la CEI. Just Published dtaille deux fois par mois les nouvelles publications parues. Disponible en-

14、ligne et aussi par email. Electropedia: www.electropedia.org Le premier dictionnaire en ligne au monde de termes lectroniques et lectriques. Il contient plus de 20 000 termes et dfinitions en anglais et en franais, ainsi que les termes quivalents dans les langues additionnelles. Egalement appel Voca

15、bulaire Electrotechnique International en ligne. Service Clients: www.iec.ch/webstore/custserv/custserv_entry-f.htm Si vous dsirez nous donner des commentaires sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 0

16、2 11 Fax: +41 22 919 03 00 IEC 60747-7 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 7: Bipolar transistors Dispositifs semiconducteurs Dispositifs discrets Partie 7: Transistors bipolaires INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMIS

17、SION ELECTROTECHNIQUE INTERNATIONALE XD ICS 31.080.30 PRICE CODE CODE PRIX ISBN 978-2-88912-311-7 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 60747-7 IEC:2010 CONTENTS FORE WORD 6 1 Scop e 8 2 Normative referen

18、ces 8 3 Terms and definitions 8 3.1 Specific functional regions 8 3.2 Resistor biased transistor . 9 3.3 Terms related to ratings and characteristics 10 4 Letter symbols 13 4.1 General . 13 4.2 Additional subscripts 13 4.3 List of letter symbols 13 4.3.1 General 13 4.3.2 Voltages . 14 4.3.3 Currents

19、 . 15 4.3.4 Powers. 15 4.3.5 Electrical parameters . 15 4.3.6 Frequency parameters . 19 4.3.7 Switching parameters 20 4.3.8 Energies 21 4.3.9 Sundry quantities 21 4.3.10 Matched-pair bipolar transistors 22 4.3.11 Resistor biased transistor. 22 5 Essential ratings and characteristics . 22 5.1 General

20、 . 22 5.2 Small signal transistors . 22 5.2.1 Ratings (limiting values) . 22 5.2.2 Characteristics 23 5.3 Linear power transistors . 24 5.3.1 Ratings (limiting values) . 24 5.3.2 Characteristics 25 5.4 High-frequency power transistors for amplifier and oscillator applications 26 5.4.1 Ratings (limit

21、ing values) . 26 5.4.2 Characteristics 27 5.5 Switching transistors 29 5.5.1 Ratings (limiting values) . 29 5.5.2 Characteristics 31 5.6 Resistor biased transistors 33 5.6.1 Ratings 33 5.6.2 Characteristics 34 6 Measuring methods 34 6.1 General . 34 6.2 Verification of ratings (limiting values) 35 6

22、.2.1 Acceptance criteria 35 6.2.2 Collector current . 35 6.2.3 Peak collector current 36 6.2.4 Base current . 36 60747-7 IEC:2010 3 6.2.5 Peak base current . 37 6.2.6 Collector-base voltage . 38 6.2.7 Collector-emitter voltage, output voltage 39 6.2.8 Emitter-base voltage, Input voltage . 39 6.2.9 S

23、afe operating area (SOA) . 40 6.2.10 Output current (I O ) 43 6.2.11 Collector-emitter sustaining voltage 44 6.3 Methods of measurement 46 6.3.1 Turn-on time intervals and turn-on energy with inductive road 46 6.3.2 Turn-off time intervals and turn-off energy with inductive road . 47 6.3.3 Collector

24、-emitter cut-off currents (d.c. method) . 49 6.3.4 Collector-base cut-off current (d.c. method) . 49 6.3.5 Emitter-base cut-off current (d.c. method) 50 6.3.6 Collector-emitter saturation voltage . 50 6.3.7 Base-emitter saturation voltage 52 6.3.8 Base-emitter voltage (d.c. method) . 53 6.3.9 Capaci

25、tances 54 6.3.10 Hybrid parameters (small-signal and large-signal) 57 6.3.11 Thermal resistance 64 6.3.12 Switching times with resistive road 69 6.3.13 High-frequency parameters (f T , ye, s) 71 6.3.14 Noise (F) 81 6.3.15 Measuring methods for matched-pair bipolar transistors 87 6.3.16 Measuring Met

26、hods for resistor biased transistors 90 7 Acceptance and reliability 94 7.1 General requirements . 94 7.2 Specific requirements . 94 7.2.1 List of endurance tests. 94 7.2.2 Conditions for endurance tests . 94 7.2.3 Acceptance-defining characteristics and acceptance criteria for reliability tests 94

27、7.3 Endurance and reliability test methods . 95 7.3.1 High temperature blocking (HTRB) 95 7.3.2 Intermittent operating life . 96 7.4 Type tests and routine tests 97 7.4.1 Type tests 97 7.4.2 Routine tests 97 Annex A (informative) Determination of the SOA . 99 Figure 1 Resistor biased transistor grap

28、hical symbol . 9 Figure 2 Modified hybrid p equivalent circuit . 19 Figure 3 Test circuit for collector current 35 Figure 4 Test circuit for peak collector current 36 Figure 5 Test circuit for base current . 37 Figure 6 Test circuit for peak base current 37 Figure 7 Circuit for testing the collector

29、-base voltage V CBO , V CBS , V CBR , V CBX38 Figure 8 Circuit for testing the collector-emitter voltage V CEO , V CES , V CER , V CEX, V O39 Figure 9 Circuit for testing the emitter-base voltages V EBOand input voltage V I. 40 4 60747-7 IEC:2010 Figure 10 Test circuit of reverse bias safe operating

30、 area (RBSOA) 40 Figure 11 Waveforms and curves for RBSOA 41 Figure 12 Circuit for testing safe operating pulse duration at load short circuit (SCSOA) . 42 Figure 13 Waveforms of base current I B , collector current I Cand voltage V CEduring load short circuit condition SCSOA . 43 Figure 14 Circuit

31、diagram for verifying the output current I O. 44 Figure 15 Basic circuit for the measurement of the collector-emitter sustaining voltage 44 Figure 16 I Cversus V CEcharacteristic . 45 Figure 17 Circuit diagram and waveforms . 47 Figure 18 Waveforms during turn-off intervals . 48 Figure 19 Basic circ

32、uit for the measurement of collector-emitter cut-off currents. 49 Figure 20 Basic circuit for the measurement of the collector-emitter saturation voltage (d.c. method) 50 Figure 21 Basic circuit for the measurement of the collector-emitter saturation voltage (pulse method) 51 Figure 22 Basic circuit

33、 for the measurement of the base-emitter saturation voltage (d.c. method) . 52 Figure 23 Basic circuit for the measurement of the base-emitter saturation voltage (pulse methods) . 53 Figure 24 Base circuit for the measurement of base-emitter voltage (d.c. method) 54 Figure 25 Basic circuit for the m

34、easurement of the common-base output capacitance using a two-terminal bridge 55 Figure 26 Basic circuit for the measurement of C CBusing a three-terminal bridge 56 Figure 27 Basic circuit for the measurement of C cbusing a three-terminal bridge . 57 Figure 28 Basic circuit for the measurement of h 1

35、1eand h 21e. 58 Figure 29 Basic circuit for the measurement of h 12e59 Figure 30 Basic circuit for the measurement of h 22e61 Figure 31 Basic circuit for the measurement of h 22b62 Figure 32 Basic circuit for the measurement of h 21E63 Figure 33 Basic test circuit for measuring the thermal resistanc

36、e of NPN transistors . 66 Figure 34 Emitter current (I E ) versus emitter-base voltage (V EB ) for the junction temperatures T j (1)and T j (2)66 Figure 35 I Eand V EBchange with time . 67 Figure 36 Circuit diagram . 69 Figure 37 Switching times . 70 Figure 38 Circuit for the measurement of the tran

37、sition frequency . 71 Figure 39 Circuit for the measurement of complex common-emitter y parameters . 73 Figure 40 Three-pole circuit for the measurement of y 11e. 74 Figure 41 Three-pole circuit for the measurement of y 22e. 74 Figure 42 Three-pole circuit for the measurement of y 21e. 75 Figure 43

38、Three-pole circuit for the measurement of y 12e. 76 Figure 44 Block diagram of the circuit for the measurement of s 11and s 22parameters 77 60747-7 IEC:2010 5 Figure 45 Block diagram of the circuit for the measurement of s 12and s 21parameters 79 Figure 46 Basic block diagram for the measurement of

39、the noise figure . 81 Figure 47 Basic circuit for the measurement of the noise figure up to 3 MHz 83 Figure 48 Basic circuit for the measurement of the noise figure from 3 MHz to 300 MHz 84 Figure 49 Basic circuit for the measurement of the noise figure below 1 kHz (signal generator method) 86 Figur

40、e 50 Basic circuit for the measurement of h 21E1 /h 21E288 Figure 51 Matching of the collector current . 90 Figure 52 Circuit diagram for measuring the on-state input voltage V I(on) ,and off- state input voltage V I(off). 90 Figure 53 Circuit diagram for measuring the bias resistor r 1. 91 Figure 5

41、4 Circuit diagram and measuring the bias resistor r 292 Figure 55 Circuit diagram for measuring the on-state output voltage V O(on)93 Figure 56 Circuit diagram for measuring the off-sate output current I O(off)94 Figure 57 Test circuit for high temperature blocking 96 Figure 58 Circuit for Intermitt

42、ent operating life 97 Figure 59 Expected number of cycles versus temperature rise DT vj. 97 Figure A.1 Typical DV EBversus collector-base (V CB ) characteristics . 99 Figure A.2 Typical safe operating area . 100 Table 1 Acceptance defining characteristics and acceptance criteria . 35 Table 2 Accepta

43、nce defining characteristics suitable for resistor biased transistor 35 Table 3 Acceptance defining characteristics after endurance tests for bipolar transistors . 95 Table 4 Minimum items of type and routine tests for transistors when applicable 98 6 60747-7 IEC:2010 INTERNATIONAL ELECTROTECHNICAL

44、COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 7: Bipolar transistors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promo

45、te international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (

46、hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non- governmental organizations liaising with the IEC also

47、 participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possib

48、le, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. Whil

49、e all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Pu