1、= b 009345b 3T3 I PREPAREDBY Tim Noh CHECKED ay Tim Noh REV STrinJS OF SHEETS DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I PMIC NA 91 -0829 , REVISION LEVEL C STANDARD MICROCIRCUIT DRAWING 5962-91 566 SIZE CAGE CODE A 67268 THIS DRAWING IS AVAILABLE FOR USE BY AU DEPARTMENTS AND AGENCIES O
2、F THE DEPARTMENT OF DEFENSE AMSC NIA THE ORIGINAL FIRST PAGE OF MIS DRAWING HAS BEEN REPLACED. APPROVED BY D. M. cod MICROCIRCUIT, DIGITAL, CMOS SINGLE CHIP 8-81T MICROCONTROUER, MONOUTHIC SILICON I I SHEET 1 OF 18 DESC FORM 193 JUL 94 DlCTRi8UTION STATEMENT A. Approved for public release; distribut
3、ion is unlimited. 5962- port O = Vcc; X2, X1 = no connect; RST = Vss. Guaranteed to the limits specified, if mt tested. u I XgC= no connect, RST = Vcc. ICs uill be slightly higher if a crysta ts ud. when idle / X1 driven uith tc.ciir tCH is mesce. srt RSf = I s. = 5 ns, is measured with al? output p
4、ins diocLted; X1 driven with tCLCH, tCHCL ECss, x2 = no cmect, RST = v .) - to start cop plus 24tCLCL. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-m 9999996 0093463 533 m STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHI
5、O 65644 Device typt A 5962-91566 REVISION LEVEL SHEET C a Casa outline Terminal nrmbcr 1 2 3 4 5 6 7 8 9 10 11 12 13 11 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Al 1 L. x I 3 Terminal syrnbol P3. VA4 P3.3/A3 P3.2/AZ/AlO Pf .l/Al /A9 P3.Q/Ai/A8 PO. 2/V PO. 1 /sooo Pl.l/Dl P1 .zmr P1.3/D3 PU P1.51 i
6、N T 0/05 IC P1.6/1WT1/06 Pl .7/T0/07 P3.71 A7 P3.6/A6 P3.S/AS yr “cc _- ._ i FIGURE 1. -. i SIZE I I DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= b 0093464 47T SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY
7、 CENTER DAYTON, OHIO 45444 REVISION LEVEL C I I “d 3 I I I I I I I I 1 I 5962-91566 SHEET 9 I I I I I 1- RST CONTROL ro I 1 I OSCILLATOR COR1 1 P2 .O-PZ. t FIGURE 2. Block diaurm. I I I 1 I I I I t I I I I I I I I I I I I I I I I I I I l I l I 1 I 1 Provided by IHSNot for ResaleNo reproduction or ne
8、tworking permitted without license from IHS-,-,-9999996 0091465 306 VCC -0.s 0.45 v EXTERNAL CLOCK ORIVE WAVEFORH VtC -0.5 0.2 vcc 4.9 0.2 vcc -0.1 0.45 v AC TESTING INPUT AND OUTPUT wviVEFoRn FIOURE 3. ma uavefornpg. STANDARD 5962-91 566 MICROC1RCUiT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON
9、, OHIO 45444 REVISION LEVEL I 1 I OESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 0093466 242 W MICROCIRCUIT DRAWNG DEFENSE ELECTRONICS SUPPLY CEMER DAYTON, OHIO 45444 4. QUALITY ASSURANCE PROVISIONS 4.1 and inswct ion.
10、For device classes N, a, and V, sanpling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Hanagant (an) plan. The modification in the H plan shall not affect the form, fit, or function as describad herein. For device class H, semp
11、ling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. conducted on all devices prior to qualification ad technology confonnnnce inspection- shall be in accordance with method 5004 of MIL-STO-883, and shall be conducted on all devices prior to quality conformance inspe
12、ction. 6.2 Screenins . . For device classes N, 9, and Y, screening shall be in accordance with MIL-PRF-38535, d shall bc For device class H, screening 4.2.1 Additional criteria for device class M. a. urn-in test, mathod 1015 of MIL-STO-=. (1) Test condition A, 8, C, or O. The test circuit shall be m
13、aintained by the manufacturer der docunmt revision level control an shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and pauar dissipation, as applicable, in accordance with the intent specified in test method 10
14、15 of UIL-STD-883. (2) TA = +12SmC, minim. b. c. Interim and final electrical test paremeters shalt be as specified in table It herein. A data retention stress test shall be includc as part of the screening procedure and shall consist of the follouing steps: SHEET li REVISION LEVEL C (1) Program gre
15、ater than 95 percent of the bit locations, including the slouest progrriwiing cell (see 3.11.21. The remining cells shatl provide a norst case spccd pattern. STANDARD A I (2) Bake, urbiassd, for 72 hwrs at 140.C to screen for data retention lifetime. (3) Perform a margin test using Vm = 5.9 V at 2S.
16、C using loose timing (i.e., TACC 1 CS). (4) Perform dynamic burn-in (see 4.2.la). (5) Margin at Vm = 5.9 V. (6) Perform electrical tests (see 4.2). (7) Erase (see 3.11.11, except devices subniitted for grorps A, E, C, and O testing. (81 Verify erasure (see 3.11.3). test method (1) Program at +ZT, 10
17、0 percent of the bits. (2) Bake, unbiased, for 26 hwrs at +2SOC. 5962-91 566 (3) Perform margin test at.v, = 5.9 V. (4) Erase (see 3.11.1). (5) Perform interim electrical tests in accordance uith table 1% c (6) (7) Perform turn-in (see 4.2.la). (81 For device types O1 and 03, progrcm 100 percent of
18、the bits and verify (see 3.11.2). One-hudred percent test at 25.C (gr- A, subgroups.1 and 7). For device types 02, 04, 05, 06, 07 and 08, the virgin state of tfe device nust be verified. Perform remaining final electrical subgroups and group A testing. V = 5.9 V with loose timing, apply POA. (9) (10
19、) For device types O1 and 03, erase. (71) For device types O1 and 03, verify erasure (see 3.11.3). Devices may be suhittcd for groups B, C, and O at this time. Steps 1 through 4 are performed at uafer level. i SIZE I t I 1 I I DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or net
20、working permitted without license from IHS-,-,-9999996 009/467 189 = STANDARD MiCRCIRCUiT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 4.2.2 pldditional cr iteria far devi ce classes N. Q. and V. a. The burn-in test duration, test condition and test tenperature, or approved alternati
21、ves shall be lis specified in the device manufacturers QH plan in accordance uith MlL-PRF-3JS35. The burn-in test circuit shsll be maintained under docwnt revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 Md shall be made available to t
22、he acquiring or preparing activity upon reqwst. The test circuit shall specify the inputs, outputs, biases, and poner dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STO-883. b. Interim and final electrical test parameters shall be as specified in table
23、 11 herein. E. Additional screening for device class V beyond the requirements of device class P shall be as specified in MIt-PRF-38535, appendix E. 4.3 Pualification in- for device cw W. 9. and 1 . Qualification inspection for device classes H, P, and V shall be in accordance uith MIL-PRF-38535. an
24、d herein for Qroups A, E, C, O, and E inspectiow (see 4.4.1 through 4.4.4). MIL-PRF-38535 including grw A, B, C, D, and E inspections and as specified herein except Acre option 2 of MIL-PRF-38535 permits alternate in-line control testing. Owlity codome inspection for device class M shall be in accor
25、dance with MIL-PRF-38535, appendix A and as specified herein Inspections to be performed for device class M shall be th- specifid, in method 5MK of MIL-Sm-W and herein .foc grorips A, B, C, D, and E inspections Csee4.4.1 through 4.4.4). Inspections to be performed shall bt those specified in MIL-PRF
26、-38535 4.1 mncc * . T.chnalogy conformance inspection for classas U, Q, and V shall k in accordance with 4.4.1 A -. a. lests shall be as specified in table II herein. b. For device class M, subgrorps 7 and 8 tests shall cwuist of verifying the EPRCU pattern specified and the instruction set. availab
27、le from the approved source of supply. verifying the functionality of the device; these tests shall have been fault graded in accordancc with M1L-STO-883, test mcthod 5012 (see 1.5 herein). Subgroup 4 (CI, and C, measurewnt) shall be measured only for the initial teat and after process or design cha
28、nges uhich may affect capacitance. raquired. For device type O1 and 03, all devices selected for testing shall have the EPRH program i.e., no program mode in betmcn, tAvav is 14tCLCL maxi-. / W.l is indicated with E. I I I 5962-91566 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ElECTRO
29、NICS SUPPLY CENTER DAYTON, OHIO 45444 I I I IESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9-14 CONTROL RESET aET I f0ClC FIGURE 6. cmfm. P0.2 UWDCFXMD PO. 1 UnOCFIIKo JUL 94 Provided by IHSNot for ResaleNo reproduction or netw
30、orking permitted without license from IHS-,-,-NOTE : 1. Assune address O is programed in previous cycle. The waveform shorn above consist of: a. Verify the data programed in address O in previous program cycle. b. Progrtra a data byte in sddress 1. t. Verify the date porgrd in address 1. STANDARD MI
31、CROCIRCUTT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAMON, OHIO 4W FICURE 6. mrem/verifv cvclp. SIZE A 5962-91566 RNICiON LEVEL SHEET C 16 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- - 5. PACKAGING STANDARD MICROCLRCUIT DRAWING DEFENSE ELECTRON
32、ICS SUPPLY CENTER DAYTON, OHIO 45444 5.1 re:c lead finish- IW, 93“. or Yn at their discretion. Contact :ne listed waved source of supply for further infomation, u -. Do not use this nuher for item acquisition. satisfy the performance requirements of this drawing. Items acquired to this nunkr may not
33、 Vendor CAGE nunkr 18324 Vendor name Philips Saicwdwtor 990 Benecia Ave SvnyvaLc u 94086 Point of contact: 611 E. Arqws Avmuc Sranyvale, CA 91086 The information contained herein is disseminated for convenience only and the Govenment assums no liability whatsoever for any inaccuracies in the information hl eti n. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
