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    DLA SMD-5962-87681 REV M-2012 MICROCIRCUIT LINEAR HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER MONOLITHIC SILICON.pdf

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    DLA SMD-5962-87681 REV M-2012 MICROCIRCUIT LINEAR HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Page 4, table I; delete temperature stability test. Add long term stability test. Electrical changes throughout table I. Editorial changes throughout. 88-11-09 M. A. FRYE B Add case outline 2. Add vendor CAGE 34333. Make corrections to load regul

    2、ation and output voltage test conditions. Also correct short-circuit current, output source current, and RAMP bias current test limits. Change RAMP voltage-valley and RAMP voltage-valley to peak, delay to output, and charge current test limits. Editorial changes throughout. 90-05-29 M. A. FRYE C Add

    3、 device types 02 and 03. Editorial changes throughout. 94-05-03 M. A. FRYE D Paragraph 1.2.2, case outline X, change descriptive designator from “CQCC2-N28B” to “CQCC1-N28B”. Table I: Input offset voltage test, VOS, change minimum limit from “-10 mV” to “-15 mV” and change maximum limit from “+10 mV

    4、” to “+15 mV”. Table I: start threshold, VSTART, fro device type 01, change maximum limit from “+9.6 V” to “+9.7 V”. Changes in accordance with N.O.R. 5962-R196-94. 94-06-02 M. A. FRYE E Terminal connections, add case outline 2 to device types 02 and 03. Changes in accordance with N.O.R. 5962-R202-9

    5、5. 95-10-05 M. A. FRYE F Table I, start up current test, ISTART; for the max value of “0.3” add “02, 03” in device type column. Changes in accordance with N.O.R. 5962-R160-97. 97-01-07 R. MONNIN G Add device class V devices. Redrawn. - ro 00-06-08 R. MONNIN H Add case outline “F”. Make correction to

    6、 the VOH1test condition under the Error amplifier section as specified in table I. - ro 02-07-19 R. MONNIN J Drawing updated to reflect current requirements. - ro 07-11-14 R. HEBER K Add device types 04 and 05. -rrp 08-12-03 R. HEBER L Under Table I; output source current test, move the -0.5 mA limi

    7、t from the min column to the max column, ILIMdelay to output test, add footnote 2/. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 10-11-30 C. SAFFLE M Add temperature stability test to Table I for device type 04. - ro 12-09-07 C. SAFFLE REV SHEET REV M M M SHEET 15 16 17

    8、REV STATUS REV M M M M M M M M M M M M M M OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY MARCIA B. KELLEHER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND

    9、 AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY ROBERT R. EVANS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-02-09 AMSC N/A REVISION LEVEL M SIZE A CAGE CODE 67268 5962-87681 SHEET 1 OF 17 DSCC FORM 2233

    10、APR 97 5962-E449-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docume

    11、nts two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness A

    12、ssurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 87681 01 E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number

    13、 For device class V: 5962 - 87681 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet th

    14、e MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The devi

    15、ce type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 1825 High speed PWM controller 02 1825A High speed PWM controller 03 1825B High speed PWM controller 04 1825-SP High speed PWM controller 05 1825A-SP High speed PWM controller 1.2.3 Device class desig

    16、nator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on th

    17、e device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo

    18、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: O

    19、utline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CQCC1-N28B 28 Square leadless chip carrier with thermal pads 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in

    20、 MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC): Device types 01 and 04 . 30 V dc Device types 02, 03, and 05 22 V dc DC output current, source or sink . 0.5 A Pulse output current, source or sink (0.5 s

    21、): Device types 01, 02, 03, and 04 2.0 A Device type 05 . 2.2 A Analog input voltage: NONINVERTING, INVERTING, and RAMP pins . -0.3 V dc to 7.0 V dc SOFT START and CURRENT LIMIT / SD pins . -0.3 V dc to 6.0 V dc Power ground: Device type 05 . 0.2 V Clock output current -5.0 mA Error amplifier output

    22、 current 5.0 mA Soft start sink current 20 mA Oscillator charging current -5.0 mA Power dissipation (PD) (all packages) . 1.0 W 2/ 3/ Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC) .

    23、 See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range: Device types 01 and 04 . 10 V dc to 30 V dc Device types 02, 03, and 05 12 V dc to 22 V dc Sink/source output current (continuous or time average): Device types 04 and 05 . 0 mA to 100 mA Reference load current: Device typ

    24、es 04 and 05 . 0 mA to 10 mA Ambient operating temperature range (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For case outline E, derate linea

    25、rly above TA= +60C at 11 mW/C; for case outlines 2 and X, derate linearly above TA= 40C at 9 mW/C; for case outline F, derate linearly above TA= +60C at 8 mW/C. 3/ Must withstand the added PDdue to short circuit test, e.g., ISC. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

    26、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbo

    27、oks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF

    28、DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents a

    29、re available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

    30、this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and

    31、 as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for

    32、 non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1

    33、Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagrams. The block diagrams shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiatio

    34、n parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sha

    35、ll be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not fe

    36、asible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in

    37、 accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot

    38、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55

    39、C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Reference section Output voltage VREFTJ= +25C, IO= 1.0 mA 1 All 5.05 5.15 V Line regulation VRLINE10 V VCC 30 V 1,2,3 01,04 20 mV 12 V VCC 20 V 02,03,05 15 Load regulation VRLOAD1.0 mA IO 10 mA 1,2,3 All 20 mV Lo

    40、ng term stability 2/ VREF/ t TJ= +125C, t = 1000 hrs. 2 01,02,03 25 mV Total output variation VOM1IO= -1.0 mA, VCC= 10 V 1,2,3 01,04 5.00 5.20 V IO= -1.0 mA, VCC= 12 V 02,03 05 5.03 5.17 VOM2IO= -1.0 mA, VCC= 30 V 01, 04 5.00 5.20 IO= -1.0 mA, VCC= 20 V 02,03 05 5.03 5.17 VOM3IO= -10 mA, VCC= 10 V 0

    41、1,04 5.00 5.20 IO= -10 mA, VCC= 12 V 02,03 05 5.03 5.17 VOM4IO= -10 mA, VCC= 30 V 01,04 5.00 5.20 IO= -10 mA, VCC= 20 V 02,03 05 5.03 5.17 Short-circuit current ISCVREF= 0 V 1,2,3 01,04 -15 -100 mA 02,03,05 30 90 Oscillator section Initial accuracy foTJ= +25C 4 01,04 360 440 kHz 02,03,05 375 425 RT

    42、= 6.6 k, CT= 220 pF, TA = 25C 05 0.9 1.1 MHz Voltage stability fo/ V 10 V VCC 30 V 4,5,6 01,04 2.0 % 12 V VCC 20 V 02,03,05 1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-8

    43、7681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Oscillator section Conti

    44、nued. Temperature stability 4,5,6 04 16 % Total variation fOM1VCC= 10 V 4,5,6 01,04 340 460 kHz VCC= 12 V 02,03 05 350 450 fOM2VCC= 30 V 01,04 340 460 VCC= 20 V 02,03 05 350 450 fOM3VCC= 12 V, RT = 6.6 k, CT= 220 pF 05 0.82 1.18 MHz fOM4VCC= 20 V, RT = 6.6 k, CT= 220 pF 0.82 1.18 Clock out high VCLK

    45、(H)1,2,3 01,04 3.9 V 02,03,05 3.7 Clock out low VCLK(L)1,2,3 01,04 2.9 V 02,03,05 0.2 Ramp voltage, peak 2/ Vim1,2,3 All 2.6 3.0 V Ramp voltage, valley 2/ Viv1,2,3 All 0.6 1.25 V Ramp voltage, valley 2/ to peak Vivp1,2,3 01,02,03,04 1.6 2.1 V 05 1.55 2.0 Oscillator discharge current IOSCRT= OPEN, VC

    46、T = 2 V 1,2,3 05 8.5 11 mA Error amplifier section Input offset voltage VOSVCM= 3.0 V, VO= 3.0 V 1,2,3 01,02,03 -15 15 mV 04,05 -10 10 Input bias current IIBVCM= 3.0 V, VO= 3.0 V 1,2,3 All 3.0 A Input offset current IOSVCM= 3.0 V, VO= 3.0 V 1,2,3 All 1.0 A Open loop gain AVOL1.0 V VO 4.0 V 4,5,6 All

    47、 60 dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87681 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL M SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical p

    48、erformance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Error amplifier section Continued. Common-mode rejection ratio CMRR 1.5 V VCM 5.5 V, VOUT= 3.0 V 4,5,6 All 75 dB Power supply rejection ratio PSRR 10 V VCC 30 V, VOUT= 3.0 V 4,5,6 01,04 85 dB 12 V VCC 20 V, VOUT= 3.0 V 02,03,05 85 Output sink current IO(SINK)E/A OUT voltage = 1.0 V 1,2,3 All 1.0 mA Output source current IO(SOURCE)E/A OUT voltage = 4.0 V 1,2,3 Al


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