欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-05207 REV B-2007 MICROCIRCUIT DIGITAL CMOS 16-BIT MICROPROCESSOR MIL-STD-1750 INSTRUCTION SET ARCHITECTURE MONOLITHIC SILICON《硅单片MIL-STD-1750型指令集结构 16比特微型信息处理机氧化物半导体数字.pdf

    • 资源ID:698321       资源大小:285.72KB        全文页数:33页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-05207 REV B-2007 MICROCIRCUIT DIGITAL CMOS 16-BIT MICROPROCESSOR MIL-STD-1750 INSTRUCTION SET ARCHITECTURE MONOLITHIC SILICON《硅单片MIL-STD-1750型指令集结构 16比特微型信息处理机氧化物半导体数字.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correct the lead finish designator from “A” to “C” in paragraph 1.2. - CFS 05-03-28 Thomas M. Hess B Add case outline Y. - CFS 07-03-05 Thomas M. Hess REV SHET REV B B B B B B B B B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 2

    2、8 29 30 31 32 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Charles F. Saffle DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS

    3、AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, CMOS, 16-BIT MICROPROCESSOR, MIL-STD-1750 INSTRUCTION SET ARCHITECTURE, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 05-02-18 MONOLITHIC SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 59

    4、62-05207 B SHEET 1 OF 32 DSCC FORM 2233 APR 97 5962-E276-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 22

    5、34 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

    6、 When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 05207 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4

    7、) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA

    8、levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HX1750 16-bit microprocessor with MIL-STD-1750 instruction set architect

    9、ure, full terminal connection 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class leve

    10、l B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CMGA17-P121 121 Pin grid arr

    11、ay Y See figure 1. 100 Unformed-lead chip carrier Z CMGA17-P113 113 Pin grid array 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted with

    12、out license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD). -0.5 V dc to +6.5 V dc Input voltage range (VIN). -0.5 V dc to

    13、 +6.5 V dc Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . +270C Thermal resistance, junction-to-case (JC): Case outlines X and Z. See MIL-STD-1835 Case outline Y. 2.1C/W Junction temperature (TJ) . +175C Maximum power dissipation (PD) 1.0 W 1.4 Recommended

    14、operating conditions. Supply voltage range (VDD). +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Operating frequency (FCLK). 40 MHz Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specif

    15、ication, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-

    16、38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit

    17、Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of

    18、 precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the ab

    19、solute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 D

    20、EFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device man

    21、ufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herei

    22、n. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordan

    23、ce with 1.2.4 herein and as specified on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Functional block diagram. The functional block diagram shall be as specified on figure 3. 3.2.4 Timing waveforms. The timing waveforms shall be as specifie

    24、d on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature rang

    25、e. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be m

    26、arked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be

    27、in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shal

    28、l be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certific

    29、ate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers p

    30、roduct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device c

    31、lass M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for

    32、any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore

    33、 at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

    34、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 4.5 V VDD 5.5 V -55C TC +125C unless otherwise specified Group A su

    35、bgroups Device type Limits Unit Min Max Input voltage low 2/ VIL2_50 VDD= 4.5V 0.8 V Input voltage high 2/ VIH2_50 VDD= 5.5V 2.0 V Output voltage low VOL3_50 VDD= 4.5 V, IOL= 9 mA 0.4 V Output voltage high VOH3_50 VDD= 4.5 V, IOH= 9 mA 2.4 V Input current high, except TSB and D0 - D15 IIH1_50 VDD= 5

    36、.5 V, VIN= 5.5 V -5.0 5.0 A Input current high, for TSB and D0 D15 IIH2_50 VDD= 5.5 V, VIN= 5.5 V -5.0 5.0 A Input current low, except TSB and D0 D15 IIL1_50 VDD= 5.5 V, VIN= GND -5.0 5.0 A Input current low, for TSB and D0 - D15 IIL2_50 VDD= 5.5 V, VIN= GND -400 -100 A Three-state output current hi

    37、gh, except TSB and D0 - D15 IOZH1_50 VDD= 5.5 V, VOUT= 5.5 V -1.0 1.0 A Three-state output current high, for TSB and D0 - D15 IOZH2_50 VDD= 5.5 V, VOUT= 5.5 V -1.0 1.0 A Three-state output current low, except TSB and D0 - D15 IOZL1_50 VDD= 5.5 V, VOUT= 0.0 V -1.0 1.0 A Three-state output current low

    38、, for TSB and D0 - D15 IOZL2_50 VDD= 5.5 V, VOUT= 0.0 V -400 -100 A Static VDDsupply current IDDsb_50 VDD= 5.5 V, VIN= 0.0 V or 5.5 V 5 mA Dynamic VDDsupply current IDDop_50 VDD= 5.5 V, VIN= 0.0 V or 5.5 V Freq = 40 MHz 1, 2, 3 183 mA Input capacitance 2/ CIN6 pF FCLK capacitance 2/ CINpFOutput capa

    39、citance 2/ COUT10 pFSTB and SCLK output capacitance 2/ COUTSee 4.4.1d 4 All 17 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

    40、OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 4.5 V VDD 5.5 V -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Data Bus input/output capacitance 2/ CI/OSe

    41、e 4.4.1d 4 12 pF Functional tests See 4.4.1b and 4.4.1c 7, 8 All Hold Tests RDY hold from FCLK 3/ tHF(RDY) 2 ns Data hold from FCLK for a read cycle 3/ tHS(D)R 8 WCODE hold from FCLK 2/ 3/ tHS2(W)S, tHS3(W)S, tHF(W)A 8 ns CONREQB hold to FCLK 2/ 3/ tHLD(CR) 10 ns INT0B-INT7B, PWRDNB hold from FCLK 2

    42、/ 3/ tHS(INTB) See figure 3. 4/ 5/ 9, 10, 11 All 10 ns Setup Tests RDY setup to FCLK 3/ tSUF(RDY) 3 ns Data setup to FCLK for a read cycle 3/ tSUS(D)R 0 DMAREQ rise setup to FCLK 3/ tRSUS(DR) 4 ns DMAREQ fall setup to FCLK 3/ tFSUS9 ILLADDB, MPROEB, PEB, PIOXEB setup to FCLK 3/ tSUS(FTB) 18 ns FTSPA

    43、RE, BITE setup to FCLK 3/ tSUS(FT) 5 ns CONREQB setup to FCLK 2/ 3/ tSUS(CR) 20 INT0B-INT7B, PWRDNB setup to FCLK 2/ 3/ tSUS(INTB) ns WCODE setup to FCLK 2/ 3/ tSUS(W), tSUS2(W) See figure 3. 4/ 5/ 9, 10, 11 All 24 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

    44、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 4.5 V VDD 5.5

    45、V -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Propagation Delay Tests SCLK delay from FCLK 3/ tPF(SCLK) 13 ns Address delay from FCLK 3/ tPS(AD) 23 ASCSB delay from FCLK 3/ tPS(AS) 22 ns FLT delay from FCLK 3/ tPS(FLT) 26 Address, ASCSB (no MMU) hold fr

    46、om FCLK 3/ 6/ tHS(A) 5 ns DI, IOM, DTR, XBO delay from FCLK 3/ tPS(B) 21 ns DI, IOM, DTR,XBO hold from FCLK 3/ 6/ tHS(B) 5 NOP delay from FCLK 3/ tPS(NOP) 22 ns STB rise delay from FCLK for a read cycle 3/ tRPF(STB)R 16 DMAK rise delay from FCLK 3/ tRPS(DMAK) 21 ns SNEW delay from FCLK 3/ tPS(SNEW)

    47、19 Data delay from FCLK for a write cycle 7/ tPS(D)W 48 ns STB fall delay from FCLK 3/ tFPF(STB) 17 STB rise delay from FCLK for a write cycle 3/ 8/ tRPF(STB)W 13 ns DMAK fall delay from FCLK 3/ tFPF(DMAK) 19 INTEN, INTKCODE delay from FCLK 3/ tPS(I) 26 ns DMAEN, INTK, NPU, OD, SUROM, RDOR, RDI, RIC

    48、1, RIC2 delay from FCLK 3/ tPS(DIS) See figure 3. 4/ 5/ 9, 10, 11 All 24 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05207 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 4.5 V VDD 5.5 V -55C TC +125C unless otherwise specified Group A subgroups Device type Li


    注意事项

    本文(DLA SMD-5962-05207 REV B-2007 MICROCIRCUIT DIGITAL CMOS 16-BIT MICROPROCESSOR MIL-STD-1750 INSTRUCTION SET ARCHITECTURE MONOLITHIC SILICON《硅单片MIL-STD-1750型指令集结构 16比特微型信息处理机氧化物半导体数字.pdf)为本站会员(deputyduring120)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开