1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Under paragraph 6.3, delete title “Package designator” and replace with “Transportation and quantity”. Also, replace the word “rails” with “tube” and delete the words “Tape and”. Sheet 8, Table I, for +VS= 3.3 V condition, rename Input bias current test (II
2、O) to Input offset current test (IIO). - ro 13-08-21 C. SAFFLE Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV A A A PAGE 18 19 20 REV STATUS OF PAGES REV A A A A A A A A A A A A A A A A A PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PMIC N/A PREPARED BY RICK OFFICER DLA L
3、AND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ Original date of drawing YY-MM-DD CHECKED BY RAJESH PITHADIA TITLE MICROCIRCUIT, LINEAR, DIFFERENTIAL AMPLIFER, LOW POWER, MONOLITHIC SILICON 12-06-26 APPROVED BY CHARLES F. SAFFLE SIZE A CODE IDENT. NO. 16236 DWG NO. V62/
4、12612 REV A PAGE 1 OF 20 AMSC N/A 5962-V072-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requ
5、irements of a high performance low power differential amplifier microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative contro
6、l number for identifying the item on the engineering documentation: V62/12612 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 THS4524-EP Low power differential amplifier 1.2.2 Case outline(
7、s). The case outline(s) are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 38 MO-153 Plastic small outline 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot so
8、lder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 3 1.3 Absolute maximum rat
9、ings. 1/ Supply voltage ( -VSto +VS) . 5.5 V Input/output voltage ( VIN, VOUT, VOCMpins ) -VS 0.7 V to +VS+ 0.7 V Differential input voltage (VID) 1 V Output current (IO) . 100 mA Input current (II) ( VIN, VOCMpins ) . 10 mA Continuous power dissipation (PD) See table under 1.5 Maximum junction temp
10、erature range (TJ) . +150C Maximum junction temperature range (TJ) : Continuous operation, long term reliability . +125C Storage temperature range (TSTG) -65C to +150C Electrostatic discharge (ESD) ratings: Human body model (HBM) . 1300 V Charge device model (CDM) 1000 V Machine model (MM) . 50 V 1.
11、4 Recommended operating conditions. 2/ Supply voltage range (VS) 3.3 V and 5.0 V Operating free-air temperature range (TA) . -55C to +125C 1/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress ratings only, and functional operation
12、 of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ Use of this product beyond the manufacturers design rules or stated par
13、ameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE
14、 IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 4 1.5 Thermal characteristics. Thermal metric Symbol Case X Unit Thermal resistance, junction-to-ambient 3/ JA106.9 C/W Thermal resistance, junction-to-case (top) 4/ JC(TOP)59.8 C/W Thermal resistance, junction-to-board 5/ JB66.5 C/W Characterization par
15、ameter, junction-to-top 6/ JT17.1 C/W Characterization parameter, junction-to-board 7/ JB66.1 C/W _ 3/ The thermal resistance, junction-to-ambient under natural convection is obtained in a simulation on a JEDEC standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2
16、a. 4/ The thermal resistance, junction-to-case (top) is obtained by simulating a cold plate test on the package top. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. 5/ The thermal resistance, junction-to-board is obtained by simulating i
17、n an environment with a ring cold plate fixture to control the printed circuit board (PCB) temperature, as described in JESD51-8. 6/ Characterization parameter, junction-to-top (JT) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtainin
18、g JA, using a procedure described in JESD51-2a (sections 6 and 7). 7/ Characterization parameter, junction-to-board (JB) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 an
19、d 7). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 5 2. APPLICABLE DOCUMENTS JEDEC Solid State Technology Association JEDEC PUB 95 - Registered and Stand
20、ard Outlines for Semiconductor Devices EIA/JESD51-2a - Integrated Circuits Thermal Test Method Environment Conditions Natural Convection (Still Air) EIA/JEDEC 51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages EIA/JESD51-8 - Integrated Circuits Thermal Test Metho
21、d Environment Conditions Junction-to-Board (Applications for copies should be addressed to the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) AMERICAN NATIONAL STANDARDS INSTITUTE ANSI SEMI STANDARD G30-88 - Test Method for Junction-
22、to-Case Thermal Resistance Measurements for Ceramic Packages (Applications for copies should be addressed to the American National Standards Institute, Semiconductor Equipment and Materials International, 1819 L Street, NW, 6 th floor, Washington, DC 20036 or online at http:/www.ansi.org) 3. REQUIRE
23、MENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the m
24、anufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.4 Design, construction, and physical dimension. The d
25、esign, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline. The case outline shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. Provided by IHSNot for ResaleNo reproduction or networ
26、king permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 6 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions 2/ +VS= 3.3 V, -VS= 0 V, unless otherwise specifiedTemperature, TADevice type Limits
27、Unit Min Max AC performance. Small signal bandwidth SSBW VOUT= 100 mVPP, G = 1 -55C to +125C 01 135 typical MHz VOUT= 100 mVPP, G = 2 49 typical VOUT= 100 mVPP, G = 5 18.6 typical VOUT= 100 mVPP, G = 10 9.3 typical Gain bandwidth product GBWP VOUT= 100 mVPP, G = 10 -55C to +125C 01 93 typical MHz La
28、rge signal bandwidth LSBW VOUT= 2 VPP, G = 1 -55C to +125C 01 95 typical MHz Bandwidth for 0.1 dB flatness VOUT= 2 VPP, G = 1 -55C to +125C 01 20 typical MHz Rising slew rate (differential) SR VOUT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 420 typical V/s Falling slew rate (differential) SR VOUT=
29、2 V step, G = 1 , RL= 200 -55C to +125C 01 460 typical V/s Overshoot OS VOUT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 1.2 typical % Undershoot US VOUT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 2.1 typical % Rise time tRVOUT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 4 typical ns Fall time tFVO
30、UT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 3.5 typical ns Settling time to 1 % tSVOUT= 2 V step, G = 1 , RL= 200 -55C to +125C 01 13 typical ns Second harmonic distortion 2 nd HD f = 1 kHz, VOUT= 1 VRMS, 3/ G = 1 , differential input -55C to +125C 01 -122 typical dBc f = 1 MHz, VOUT= 2 VPP, G =
31、1 -85 typical See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 7 TABLE I. Electrical performance characteristics Continued. 1/
32、 Test Symbol Conditions 2/ +VS= 3.3 V, -VS= 0 V, unless otherwise specifiedTemperature, TA Device type Limits Unit Min Max AC performance continued. Third harmonic distortion 3 rd HD f = 1 kHz, VOUT= 1 VRMS, 3/ G = 1 , differential input -55C to +125C 01 -141 typical dBc f = 1 MHz, VOUT= 2 VPP, G =
33、1 -90 typical Second order intermodulation distortion Two tone, f1= 2 MHz, f2= 2.2 MHz, VOUT= 2 VPPenvelope -55C to +125C 01 -83 typical dBc Third order intermodulation distortion Two tone, f1= 2 MHz, f2= 2.2 MHz, VOUT= 2 VPPenvelope -55C to +125C 01 -90 typical dBc Input voltage noise f 10 kHz -55C
34、 to +125C 01 4.6 typical nV / HzInput current noise f 100 kHz -55C to +125C 01 0.6 typical pA / HzOverdrive recovery time Overdrive = 0.5 V -55C to +125C 01 80 typical ns Output balance error VOUT= 100 mV, f 2 MHz, differential input -55C to +125C 01 -57 typical dB Closed loop output impedance f = 1
35、 MHz (differential) -55C to +125C 01 0.3 typical Channel to channel crosstalk f = 10 kHz, measured differentially -55C to +125C 01 -125 typical dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME CO
36、LUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 8 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ +VS= 3.3 V, -VS= 0 V, unless otherwise specifiedTemperature, TA Device type Limits Unit Min Max DC performance. Open loop voltage gain AOL -
37、55C to +125C 01 80 dB Input referred offset voltage -55C to +125C 01 7 mV Input offset voltage 4/ drift -55C to +125C 01 2 typical V/C Input bias current IIB-55C to +125C 01 3.8 A Input bias current 4/ drift -55C to +125C 01 1.75 typical nA/C Input offset current IIO-55C to +125C 01 2.0 A Input offs
38、et current 4/ drift -55C to +125C 01 0.1 typical nA/C Input section. Common mode input voltage low -55C to +125C 01 0 V Common mode input voltage high -55C to +125C 01 1.8 V Common mode rejection ratio CMRR -55C to +125C 01 73.8 dB Input resistance RIN5/ -55C to +125C 01 110|1.5 typical k|pF Output
39、section. Output voltage low VOL-55C to +125C 01 0.2 V Output voltage high VOH-55C to +125C 01 2.95 V Output current drive (for linear operation) RL= 50 -55C to +125C 01 35 typical mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f
40、rom IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 9 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ +VS= 3.3 V, -VS= 0 V, unless otherwise specifiedTemperature, TA Device type Limits Unit Min Max Power su
41、pply section. Specified operating voltage -55C to +125C 01 2.5 5.5 V Quiescent operating current, per channel -55C to +125C 01 0.85 1.25 mA Power supply rejection ratio PSRR -55C to +125C 01 65 dB Power down section. Enable voltage threshold Assured “on” above 2.1 V -55C to +125C 01 2.1 V Disable vo
42、ltage threshold Assured “off” below 0.7 V -55C to +125C 01 0.7 V Disable pin bias current -55C to +125C 01 1 typical A Power down quiescent current -55C to +125C 01 10 typical A Turn on time delay Time to VOUT= 90% of final value, VIN= 2 V, RL= 200 -55C to +125C 01 108 typical ns Turn off time delay
43、 Time to VOUT= 10% of original value, VIN= 2 V, RL= 200 -55C to +125C 01 88 typical ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 R
44、EV A PAGE 10 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ +VS= 3.3 V, -VS= 0 V, unless otherwise specifiedTemperature, TA Device type Limits Unit Min Max VOCMvoltage control section. Small signal bandwidth SSBW -55C to +125C 01 23 typical MHz Slew rate -55C
45、 to +125C 01 55 typical V/s Gain -55C to +125C 01 0.98 1.021 V/V Common mode offset voltage from VOCMinput Measured at VOUTwith VOCMinput driven, VOCM= 1.65 V 0.5 V -55C to +125C 01 7 mV Input bias current VOCM= 1.65 V 0.5 V -55C to +125C 01 8 A VOCMvoltage range -55C to +125C 01 0.8 to 2.5 typical
46、V Input impedance 6/ -55C to +125C 01 72|1.5 typical k|pF Default output common mode voltage offset from (+VS- -VS) / 2 Measured at VOUTwith VOCMinput open -55C to +125C 01 5 mV See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
47、HS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/12612 REV A PAGE 11 TABLE I. Electrical performance characteristics - Continued. 1/ Test Symbol Conditions 2/ +VS= 5.0 V, -VS= 0 V, unless otherwise specifiedTemperature, TADevice type Limits Unit Min Max AC performance. Small signal bandwidth SSBW VOUT= 100 mVPP, G = 1 -55C to +125C 01 145 typical MHz VOUT= 100 mVPP, G = 2 50 typical VOUT= 100 mVPP, G = 5 20 typical VOUT= 100 mVPP,
