1、 IEC 61788-16 Edition 1.0 2013-01 INTERNATIONAL STANDARD NORME INTERNATIONALE Superconductivity Part 16: Electronic characteristic measurements Power-dependent surface resistance of superconductors at microwave frequencies Supraconductivit Partie 16: Mesures de caractristiques lectroniques Rsistance
2、 de surface des supraconducteurs aux hyperfrquences en fonction de la puissance IEC61788-16:2013 colourinsideTHIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2013 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in a
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16、i vous avez des questions contactez-nous: csciec.ch. IEC 61788-16 Edition 1.0 2013-01 INTERNATIONAL STANDARD NORME INTERNATIONALE Superconductivity Part 16: Electronic characteristic measurements Power-dependent surface resistance of superconductors at microwave frequencies Supraconductivit Partie 1
17、6: Mesures de caractristiques lectroniques Rsistance de surface des supraconducteurs aux hyperfrquences en fonction de la puissance INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE V ICS 17.220.20; 29.050 PRICE CODE CODE PRIX ISBN 978-2-83220-582-2 Registered trad
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19、colourinside 2 61788-16 IEC:2013 CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope . 7 2 Normative references . 7 3 Terms and definitions . 7 4 Requirements . 8 5 Apparatus . 8 5.1 Measurement system 8 5.1.1 Measurement system for the tan of the sapphire rod . 8 5.1.2 Measurement system for the power d
20、ependence of the surface resistance of superconductors at microwave frequencies . 9 5.2 Measurement apparatus 10 5.2.1 Sapphire resonator 10 5.2.2 Sapphire rod 10 5.2.3 Superconductor films . 11 6 Measurement procedure . 11 6.1 Set-up . 11 6.2 Measurement of the tan of the sapphire rod 11 6.2.1 Gene
21、ral . 11 6.2.2 Measurement of the frequency response of the TE021mode . 11 6.2.3 Measurement of the frequency response of the TE012mode . 13 6.2.4 Determination of tan of the sapphire rod . 13 6.3 Power dependence measurement 14 6.3.1 General . 14 6.3.2 Calibration of the incident microwave power to
22、 the resonator. 15 6.3.3 Measurement of the reference level . 15 6.3.4 Surface resistance measurement as a function of the incident microwave power . 15 6.3.5 Determination of the maximum surface magnetic flux density 15 7 Uncertainty of the test method 16 7.1 Surface resistance. 16 7.2 Temperature
23、17 7.3 Specimen and holder support structure . 18 7.4 Specimen protection 18 8 Test report 18 8.1 Identification of the test specimen . 18 8.2 Report of power dependence of Rsvalues. 18 8.3 Report of test conditions 18 Annex A (informative) Additional information relating to Clauses 1 to 7 . 19 Anne
24、x B (informative) Uncertainty considerations . 24 Bibliography 29 Figure 1 Measurement system for tan of the sapphire rod . 9 Figure 2 Measurement system for the microwave power dependence of the surface resistance . 9 61788-16 IEC:2013 3 Figure 3 Sapphire resonator (open type) to measure the surfac
25、e resistance of superconductor films . 10 Figure 4 Reflection scattering parameters (|S11| and |S22|) . 13 Figure 5 Term definitions in Table 3 . 17 Figure A.1 Three types of sapphire rod resonators . 19 Figure A.2 Mode chart for a sapphire resonator (see IEC 61788-15) 20 Figure A.3 Loaded quality f
26、actor QLmeasurements using the conventional 3 dB method and the circle fit method . 21 Figure A.4 Temperature dependence of tan of a sapphire rod measured using the two-resonance mode dielectric resonator method 3 22 Figure A.5 Dependence of the surface resistance Rson the maximum surface magnetic f
27、lux density Bs max3 23 Table 1 Typical dimensions of the sapphire rod 11 Table 2 Specifications of the vector network analyzer 16 Table 3 Specifications of the sapphire rods 17 Table B.1 Output signals from two nominally identical extensometers 25 Table B.2 Mean values of two output signals . 25 Tab
28、le B.3 Experimental standard deviations of two output signals 25 Table B.4 Standard uncertainties of two output signals 26 Table B.5 Coefficient of Variations of two output signals 26 4 61788-16 IEC:2013 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SUPERCONDUCTIVITY Part 16: Electronic characteristic
29、 measurements Power-dependent surface resistance of superconductors at microwave frequencies FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IE
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38、irect or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispe
39、nsable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 61788-16
40、 has been prepared by IEC technical committee 90: Superconductivity. The text of this standard is based on the following documents: FDIS Report on voting 90/309/FDIS 90/318/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the abov
41、e table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all the parts in the IEC 61788 series, published under the general title Superconductivity, can be found on the IEC website. 61788-16 IEC:2013 5 The committee has decided that the contents of this
42、 publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour insid
43、e logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 61788-16 IEC:2013 INTRODUCTION Since the discovery of high-Tcsupercond
44、uctors (HTS), extensive researches have been performed worldwide for electronic applications and large-scale applications. In the fields of electronics, especially in telecommunications, microwave passive devices such as filters using HTS are being developed and testing is underway on sites 1,2,3,41
45、. Superconductor materials for microwave resonators, filters, antennas and delay lines have the advantage of ultra-low loss characteristics. Knowledge of this parameter is vital for the development of new materials on the supplier side and the design of superconductor microwave components on the cus
46、tomer side. The parameters of superconductor materials needed to design microwave components are the surface resistance Rsand the temperature dependence of the Rs. Recent advances in HTS thin films with Rs, several orders of magnitude lower than normal metals has increased the need for a reliable ch
47、aracterization technique to measure this property 5,6. Among several methods to measure the Rsof superconductor materials at microwave frequencies, the dielectric resonator method 7,8,9 has been useful due to that the method enables to measure the Rsnondestructively and accurately. In particular, th
48、e sapphire resonator is an excellent tool for measuring the Rsof HTS materials 10. In 2002, the International Electrotechnical Commission (IEC) published the dielectric resonator method as a measurement standard 11. The test method given in this standard enables measurement of the power-dependent su
49、rface resistance of superconductors at microwave frequencies. For high power microwave device applications such as those of transmitting devices, not only the temperature dependence of Rsbut also the power dependence of Rsis needed to design the microwave components. Based on the measured power dependence, the RF current density dependence of the surface resistance can be evaluat
