1、INTERNATIONAL STANDARD IEC 60747-14-2 First edition 2000-11 Semiconductor devices Part 14-2: Semiconductor sensors Hall elements Dispositifs semiconducteurs Partie 14-2: Capteurs semiconducteurs Elments effet de Hall Reference number IEC 60747-14-2:2000(E)Publication numbering As from 1 January 1997
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8、ONAL STANDARD IEC 60747-14-2 First edition 2000-11 Semiconductor devices Part 14-2: Semiconductor sensors Hall elements Dispositifs semiconducteurs Partie 14-2: Capteurs semiconducteurs Elments effet de Hall PRICE CODE IEC 2000 Copyright - all rights reserved No part of this publication may be repro
9、duced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from the publisher. International Electrotechnical Commission 3, rue de Varemb Geneva, Switzerland Telefax: +41 22 919 0300 e-mail: inmailiec.ch IEC web site h
10、ttp:/www.iec.ch G For price, see current catalogueCommission Electrotechnique InternationaleInternational Electrotechnical Commission2 60747142 IEC:2000(E) CONTENTS Page FOREWORD 3 INTRODUCTION 4 Clause 1 General 5 1.1 Scope . 5 1.2 Normativereferences 5 1.3 Definitions. 5 1.4 Symbols 6 2 Essentialr
11、atingsandcharacteristics. 7 2.1 General. 7 2.2 Ratings(limitingvalues) 8 2.3 Characteristics 8 3 Measuringmethods 9 3.1 General. 9 3.2 OutputHallvoltage(V H ) 9 3.3 Offsetvoltage(V o ) 11 3.4 Inputresistance(R in ) 12 3.5 Outputresistance(R out ) 13 3.6 TemperaturecoefficientofoutputHallvoltage( a V
12、 H ) 13 3.7 Temperaturecoefficientofinputresistance( a Rin ) 1460747142 IEC:2000(E) 3 INTERNATIONALELECTROTECHNICALCOMMISSION _ SEMICONDUCTORDEVICES Part142:SemiconductorsensorsHallelements FOREWORD 1) TheIEC(InternationalElectrotechnicalCommission)isaworldwideorganizationforstandardizationcomprisin
13、g allnationalelectrotechnicalcommittees(IECNationalCommittees).TheobjectoftheIECistopromote internationalcooperationonallquestionsconcerningstandardizationintheelectricalandelectronicfields.To thisendandinadditiontootheractivities,theIECpublishesInternationalStandards.Theirpreparationis entrustedtot
14、echnicalcommittees;anyIECNationalCommitteeinterestedinthesubjectdealtwithmay participateinthispreparatorywork.International,governmentalandnongovernmentalorganizationsliaising withtheIECalsoparticipateinthispreparation.TheIECcollaboratescloselywiththeInternationalOrganization forStandardization(ISO)
15、inaccordancewithconditionsdeterminedbyagreementbetweenthetwo organizations. 2) TheformaldecisionsoragreementsoftheIEContechnicalmattersexpress,asnearlyaspossible,an internationalconsensusofopinionontherelevantsubjectssinceeachtechnicalcommitteehasrepresentation fromallinterestedNationalCommittees. 3
16、) Thedocumentsproducedhavetheformofrecommendationsforinternationaluseandarepublishedintheform ofstandards,technicalspecifications,technicalreportsorguidesandtheyareacceptedbytheNational Committeesinthatsense. 4)Inordertopromoteinternationalunification,IECNationalCommitteesundertaketoapplyIECInternat
17、ional Standardstransparentlytothemaximumextentpossibleintheirnationalandregionalstandards.Any divergencebetweentheIECStandardandthecorrespondingnationalorregionalstandardshallbeclearly indicatedinthelatter. 5)TheIECprovidesnomarkingproceduretoindicateitsapprovalandcannotberenderedresponsibleforany e
18、quipmentdeclaredtobeinconformitywithoneofitsstandards. 6)AttentionisdrawntothepossibilitythatsomeoftheelementsofthisInternationalStandardmaybethesubject ofpatentrights.TheIECshallnotbeheldresponsibleforidentifyinganyorallsuchpatentrights. InternationalStandardIEC60747142hasbeenpreparedbysubcommittee
19、47E:Discrete semiconductordevices,ofIECtechnicalcommittee47:Semiconductordevices. Thetextofthisstandardisbasedonthefollowingdocuments: FDIS Reportonvoting 47E/158/FDIS 47E/171/RVD Fullinformationonthevotingfortheapprovalofthisstandardcanbefoundinthereporton votingindicatedintheabovetable. Thispublic
20、ationhasbeendraftedinaccordancewiththeISO/IECDirectives,Part3. Thecommitteehasdecidedthatthecontentsofthispublicationwillremainunchangeduntil2005. Atthisdate,thepublicationwillbe reconfirmed; withdrawn; replacedbyarevisededition,or amended. Abilingualversionofthisstandardmaybeissuedatalaterdate.4 60
21、747142 IEC:2000(E) INTRODUCTION ThispartofIEC60747shouldbereadinconjunctionwithIEC607471.Itprovidesbasic informationonsemiconductor terminology; lettersymbols; essentialratingsandcharacteristics; measuringmethods; acceptanceandreliability.60747142 IEC:2000(E) 5 SEMICONDUCTORDEVICES Part142:Semicondu
22、ctorsensorsHallelements 1General 1.1Scope ThispartofIEC60747providesstandardsforpackagedsemiconductorHallelementswhich utilizetheHalleffect. 1.2 Normativereferences Thefollowingnormativedocumentscontainprovisionswhich,throughreferenceinthistext, constituteprovisionsofthispartofIEC60747.Fordatedrefer
23、ences,subsequentamendments to,orrevisionsof,anyofthesepublicationsdonotapply.However,partiestoagreements basedonthispartofIEC60747areencouragedtoinvestigatethepossibilityofapplyingthe mostrecenteditionsofthenormativedocumentsindicatedbelow.Forundatedreferences,the latesteditionofthenormativedocument
24、referredtoapplies.MembersofISOandIECmaintain registersofcurrentlyvalidInternationalStandards. IEC607471:1983, SemiconductordevicesDiscretedevicesandintegratedcircuitsPart1: General IEC6134051:1998, ElectrostaticsPart51:Protectionofelectronicdevicesfromelectro staticphenomenaGeneralrequirements 1.3De
25、finitions ForthepurposeofthisInternationalStandard,thefollowingdefinitionsapply. 1.3.1 semiconductorHallelement semiconductordevicethatgeneratesthevoltageuponapplicationofamagneticfieldwith magneticfluxdensity,beingproportionaltothecontrolvoltage(seebelow)andthemagnetic fluxdensity 1.3.2 Hallmobilit
26、y electronmobilitymeasuredwiththeusageoftheHalleffect 1.3.3 controlcurrent currenttobeappliedcontinuouslytotheinputterminalsofthedevicewhentheoutput terminalsarenotconnectedtoexternalcircuit 1.3.4 controlvoltage voltagetobeappliedcontinuouslytotheinputterminalsofthedevicewhentheoutput terminalsareno
27、tconnectedtoexternalcircuit6 60747142 IEC:2000(E) 1.3.5 offsetvoltage(orresidualvoltage) voltagetobederivedbetweentheoutputterminalswhenaspecifiedcurrentorvoltageis appliedtotheinputterminalsofthedevicewithoutmagneticfield 1.3.6 outputHallvoltage thedifferencebetweenthevoltage,whichisderivedacrossth
28、eoutputterminalswhena specifiedcurrentorvoltageisappliedtotheinputterminalsofthedeviceinaspecified magneticfield,andtheoffsetvoltage 1.3.7 residualratio theratiooftheoffsetvoltagetotheoutputHallvoltage 1.3.8 inputresistance resistancebetweentheinputterminalsofthedevicewhentheoutputterminalsarenot co
29、nnectedtoexternalcircuit 1.3.9 outputresistance resistancebetweentheoutputterminalsofthedevicewhentheinputterminalsarenot connectedtoexternalcircuit 1.3.10 temperaturecoefficientofoutputHallvoltage relativechangeinoutputHallvoltagereferredtothechangeintemperature 1.3.11 temperaturecoefficientofinput
30、resistance relativechangeininputresistancereferredtothechangeintemperature 1.4Symbols 1.4.1 Clauses2,3and4ofIEC607471,chapterV,apply. ForthefieldofpackagedHallelements,thefollowingadditionalspecialsubscriptsare recommended: c control o offset HH a l l in input out output60747142 IEC:2000(E) 7 Table1
31、Lettersymbols Nameanddesignation Lettersymbol Remarks Hallmobility m H Controlcurrent I c Controlvoltage V c Offsetvoltageorresidualvoltage V o OutputHallvoltage V H Residualratio V o /V H Inputresistance R in Outputresistance R out Temperaturecoefficient ofoutputHallvoltage a VH Temperaturecoeffici
32、ent ofinputresistance a Rin 1.4.2Terminals TheterminalnumbersandtheirdesignationforpackagedHallelementsareshowninfigure1 andtable2.Thedesignationoftheterminalsislistedbelow.The(+)and( - )signsoftheoutput terminalsassumethatthemagneticlineofforcepassesthroughfromthetoptothebottomof theHallelement. Ta
33、ble2Terminalnumbers Terminalnumber Voltage/current 1V c (+)orI c (+) 2V H (+) 3 V c (- )orI c (- ) 4 V H (- ) 2 Essentialratingsandcharacteristics 2.1General 2.1.1 Elementmaterials UsefulmaterialsforHallelementsaresemiconductormaterialslikeGaAs,InSb,InAs,Si,etc. RatingsofHallelementsdependontheeleme
34、ntmaterials. 2.1.2 Handlingprecautions Duetoaratherthinlayerofsemiconductorsensingregion,thedevicesmaybeirreversibly damagedifanexcessivevoltageisallowedtobuildup,forexampleduetocontactwith electrostaticallychargedpersons,leakagecurrentsfromsolderingirons,etc. Whenhandlingthedevices,thehandlingpreca
35、utionsgiveninIEC607471,chapter IX, clause1,shallthereforebeobserved.8 60747142 IEC:2000(E) 2.2 Ratings(limitingvalues) 2.2.1Temperatures 2.2.1.1 Minimumandmaximumstoragetemperatures(T stg ) 2.2.1.2 Minimumandmaximumoperatingtemperatures(T opr ) 2.2.2Bias 2.2.2.1 Maximumcontrolcurrent(I cmax ) 2.2.2.
36、2 Maximumcontrolvoltage(V cmax ) 2.2.3 Deratingcurve 2.2.3.1 Controlcurrentderatingcurve Maximumcontrolcurrentateachtemperatureshallbestatedorbedepictedintheformofa figure. 2.2.3.2 Controlvoltagederatingcurve Maximumcontrolvoltageateachtemperatureshallbestatedorbedepictedintheformofa figure. 2.3Char
37、acteristics Characteristicsaretobegivenat25C,except where otherwise stated; other temperatures shouldbetakenfromthelistinIEC607471,chapterVI,clause5. 2.3.1 Unloadedelectricalcharacteristics 2.3.1.1 OutputHallvoltage(V H ) Maximumandminimumvalues,ataspecifiedmagneticfluxdensityandcontrolvoltageor cur
38、rent,atanoperatingtemperatureof25C. 2.3.1.2 Inputresistance(R in ) Maximumandminimumvalues,ataspecifiedvoltageorcurrentwithoutanymagneticflux density,atanoperatingtemperatureof25C. 2.3.1.3 Outputresistance(R out ) Maximumandminimumvalues,ataspecifiedvoltageorcurrentwithoutanymagneticflux density,ata
39、noperatingtemperatureof25C. 2.3.1.4 Offsetvoltage(V o ) Maximumandminimumvalues,ataspecifiedcontrolvoltageorcurrentwithoutanymagnetic fluxdensity,atanoperatingtemperatureof25C. 2.3.1.5 TemperaturecoefficientofoutputHallvoltage( a V H ) Averagevalueataspecifiedtemperaturerange(understoodastherangegiv
40、enin3.6.4),ata specifiedcontrolcurrentunderspecifiedmagneticfluxdensity.60747142 IEC:2000(E) 9 2.3.1.6 Temperaturecoefficientofinputresistance( a Rin ) Averagevalueataspecifiedtemperaturerange(understoodastherangegivenin3.7.3),ata specifiedcontrolcurrentwithoutanymagneticfluxdensity. 2.3.1.7Dielectr
41、ic strength Maximumandminimumvaluesataspecifiedvoltagewithrespecttoanyexternalsurfaceof thedevice. 2.3.2 Dimensionaldrawing 2.3.2.1Dimensions Thedrawingshallprovidedimensionswithspecifiedtolerance. 2.3.2.2 Positionofterminals Thepositionofthefourterminalsshallbeshowninthefigure. 3Measuring methods 3
42、.1General 3.1.1 Generalprecautions ThegeneralprecautionsarelistedinchapterVII,clause2,ofIEC607471.Inaddition,special careshouldbetakentouselowrippled.c.suppliesandtodecoupleadequatelyallbiassupply voltages. 3.1.2 Handlingprecautions Duetotheratherthinlayerofsemiconductorsensingregion,thedevicesmaybe
43、irreversibly damagedifanexcessivevoltageisallowedtobuildup,forexampleduetocontactwith electrostaticallychargedpersons,leakagecurrentsfromsolderingirons,etc. Whenhandlingthedevices,thehandlingprecautionsgiveninIEC607471,chapterIX, clause1,orIEC6134051,shall,therefore,beobserved. 3.2 OutputHallvoltage
44、(V H ) 3.2.1Purpose TomeasureoutputHallvoltageunderspecifiedconditions. 3.2.2 Principlesofmeasurements MeasuringtheoutputHallvoltageistoevaluatethesensitivityofthedevicestotheapplied magneticfluxdensity,whichisinturnameasureofhowwellthecurrentdevicesmatch applicationcircuits.10 60747142 IEC:2000(E) B:Magneticfluxdensity V H = m H (W/L) B V C V H 1 2 4 3 W 1,3:Inputterminals 2,4:Outputterminals V C d L IEC1871/2000 Figure1Theprincipl
