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    JEDEC JESD88E-2007 JEDEC Dictionary of Terms for Solid State Technology (Sixth Edition).pdf

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    JEDEC JESD88E-2007 JEDEC Dictionary of Terms for Solid State Technology (Sixth Edition).pdf

    1、JEDEC STANDARD JEDEC Dictionary of Terms for Solid-State Technology 6thEdition JESD88E (Revision of JESD88D, December 2009) JUNE 2013 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Boa

    2、rd of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products,

    3、 and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adop

    4、tion may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications repr

    5、esents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No claims to b

    6、e in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or refer to www.jedec.org under Standards and

    7、Documents for alternative contact information. Published by JEDEC Solid State Technology Association 2013 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the

    8、 individual agrees not to charge for or resell the resulting material. PRICE: Contact JEDEC Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. For information, contact: JEDEC Solid State Technolo

    9、gy Association 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or refer to www.jedec.org under Standards-Documents/Copyright Information. JEDEC Standard No. 88E - i - Foreword This dictionary was originally prepared and edited by a special Working Group consisting of JEDEC consultant

    10、s Fred A. Mann and Frank S. Stein, under the direction of the JEDEC Board of Directors, and is periodically updated by JEDEC Committee JC-10 on Terms, Definitions, and Symbols. After the 1stedition, regular contribution has been made by David Sweetman. Publication of the JEDEC Dictionary was approve

    11、d by the JEDEC Board of Directors under Ballot JCB-00-97. This Sixth Edition includes definitions from 14 standards that were not included in the Fifth Edition plus revised definitions from 26 additional publications and standards that have been updated. All reported errors and necessary rewording h

    12、ave been taken into account. Introduction As new or revised JEDEC and EIA publications*are issued, their definitions are considered for inclusion in this dictionary. All publications with definitions in this edition of the dictionary are listed in Annex A. The following are often not included: (1) t

    13、erms having a specialized meaning only within the context of a particular publication (usually a test method), e.g., “brush: A toothbrush with a handle made up of nonreactive material ”; and (2) concepts where the publication gives only a symbol and a term but no definition. This dictionary, like an

    14、y dictionary, is primarily intended to define concepts. For an extensive list of symbols and abbreviations with the corresponding terms for many variations (dc, peak, rms, small signal, large signal, etc.), see JEP104, Reference Guide to Letter Symbols for Semiconductor Devices. All entries are revi

    15、ewed for punctuation, grammar, and clarity, as well as for accuracy, and reworded if such is considered warranted. If a definition is substantially recast, the date of the source publication is followed by a pound sign (#). The editors have made every effort to ensure that the intent of the original

    16、 definition is retained in all cases. When the same term is defined in more than one source publication in substantially different words having essentially equivalent meanings, the formulation is selected that, in the opinion of the editors, is the most completely and clearly stated, and the pound s

    17、ign is applied to the references to the other publications. If the same term is defined with different meanings in two or more publications, all forms are given in alphanumeric order by publication reference. The definitions are numbered (1), (2), , but no order of preference is intended. While most

    18、 of the conventions used in this dictionary are self-explanatory, two may need further explanation: (1) Terms separated by semicolons (;) are synonyms. (2) Square brackets enclosing a part of a term and possibly parts of its definition indicate that the words placed between them may replace all or s

    19、ome of the preceding words. Selection of the bracketed part of the term requires the selection of the bracketed parts of the definition. This convention is used to show at first sight the construction of terms having parallel definitions. *As used in this dictionary, the word “publication” is a gene

    20、ric term that includes standards. - ii - Scope Each term and definition in this dictionary has been included strictly for application within the solid-state industry. Many of the terms and definitions in this dictionary may have applicability beyond the scope of the JEDEC Solid State Technology Asso

    21、ciation; however, an assumption of such extended applicability is the responsibility of the user. The goal is to include the appropriate terms and definitions from all JEDEC publications and standards. At the present time, only terms and definitions from the publications listed in Annex A are includ

    22、ed. JEDEC Standard No. 88E Page 1 JEDEC DICTIONARY OF TERMS FOR SOLID-STATE TECHNOLOGY Terms, abbreviations, letter symbols, and definitions References _ # The definition in this referenced publication has been reworded in this dictionary for clarity or consistency. A A: See “port A; port B”. A; a:

    23、See “anode terminal”. abbreviation: A shortened form of a word or expression. JESD77D, 8/12JESD99C, 12/12ABD: See “avalanche breakdown diode”. ABD array: A device having three or more terminals and containing multiple diodes within a single package, with at least one of the diodes being an ABD. NOTE

    24、 ABD arrays can be classified as 1) devices with multiple discrete semiconductor chips; and 2) devices with multiple diode junctions diffused into a single semiconductor chip. JESD77D, 8/12JESD210, 12/07above-passivation layer (APL): A low-impedance metal plane, built on the surface of a die above t

    25、he passivation layer, that connects a group of bumps or pins (typically power or ground). NOTE This structure is sometimes referred to as a redistribution layer (RDL). There may be multiple APLs (sometimes referred to as islands) for a power or ground group. JS-001-2012, 4/12absolute accuracy error:

    26、 Synonym for “total error”. JESD99C, 12/12absolute maximum rated junction temperature: The maximum junction temperature of an operating device, as listed in its data sheet and beyond which damage (latent or otherwise) may occur; it is frequently specified by device manufacturers for a specific devic

    27、e and/or technology. NOTE Manufacturers may also specify maximum case temperatures for specific packages. JESD22-A108D, 11/10#absolute maximum rated temperature: The maximum junction or ambient temperature of an operating device, as listed in its data sheet and beyond which damage (latent or otherwi

    28、se) may occur. NOTE Manufacturers may also specify maximum case temperatures for specific packages. JESD89-1A, 10/07JESD89-3A, 11/07absolute maximum rated voltage: The maximum voltage that may be applied to a device, as listed in its data sheet and beyond which damage (latent or otherwise) may occur

    29、; it is frequently specified by device manufacturers for a specific device and/or technology. JESD22-A108D, 11/10#JESD89-1A, 10/07#JESD89-2A, 10/07#JESD89-3A, 11/07#absolute maximum rating: Synonym for “maximum rating”. JESD77D, 8/12ABTXXXXXX series: A BiCMOS series that includes devices whose input

    30、 logic levels are TTL-compatible and whose outputs are specified at TTL levels. JESD54, 2/96accelerated ELF test time (tA): The duration of the accelerated ELF test. JESD74A, 2/07accelerated equivalent soak: A soak at a higher temperature for a shorter time (compared to the standard soak) to provide

    31、 roughly the same amount of moisture absorption. J-STD-020D.1, 3/08 JEDEC Standard No. 88E Page 2 Terms, abbreviations, letter symbols, and definitions References _ # The definition in this referenced publication has been reworded in this dictionary for clarity or consistency. accelerated soft error

    32、 rate (ASER): A soft error rate in the presence of an intense ionizing radiation source. JESD89, 8/01acceleration factor (A, AF): For a given failure mechanism, the ratio of the time it takes for a certain fraction of the population to fail, following application of one stress or use condition, to t

    33、he corresponding time at a more severe stress or use condition. NOTE 1 Times are generally derived from modeled time-to-failure distributions (lognormal, Weibull, exponential, etc.). NOTE 2 Acceleration factors can be calculated for temperature, electrical, mechanical, environmental, or other stress

    34、es that can affect the reliability of a device. NOTE 3 Acceleration factors are a function of one or more of the basic stresses that can cause one or more failure mechanisms. For example, a plot of the natural log of the time-to-failure for a cumulative constant percentage failed (e.g., 50%) at mult

    35、iple stress temperatures as a function of 1/kT, the reciprocal of the product of Boltzmanns constant in electronvolts per kelvin and the absolute temperature in kelvins, is linear if one and only one failure mechanism is involved. The best-fit linear slope is equal to the apparent activation energy

    36、in electronvolts. NOTE 4 The abbreviation AF is often used in place of the symbol A. JEP122G, 10/11JEP143C, 7/12JESD74A, 2/07#JESD85, 7/01#JESD91A, 8/01#JESD94A, 7/08acceleration factor, stress (Af): The acceleration factor due to the presence of some stress (e.g., current density, electric field, h

    37、umidity, temperature cycling). JEP122G, 10/11JEP143C, 7/12acceleration factor, temperature (AT): The acceleration factor due to changes in temperature. NOTE 1 This is the acceleration factor most often referenced. The Arrhenius equation for reliability is commonly used to calculate the acceleration

    38、factor that applies to the acceleration of time-to-failure distributions for microcircuits and other semiconductor devices: AT= T1/T2= exp(Eaa/k)(1/T1 1/T2) where Eaais the apparent activation energy (eV); k is Boltzmanns constant (8.62 105eV/K); T1is the absolute temperature of test 1 (K); T2is the

    39、 absolute temperature of test 2 (K); T1is the observed failure rate at test temperature T1 (h-1); T2is the observed failure rate at test temperature T2 (h-1). NOTE 2 The best-fit linear slope of a plot of the natural log of the time-to-failure as a function of 1/kT, the reciprocal of the product of

    40、Boltzmanns constant in electronvolts per kelvin and the absolute temperature in kelvins, is equal to the apparent activation energy in electronvolts. NOTE 3 q= o AT, where qis the quoted (predicted) system failure rate at some system temperature Ts, ois the observed failure rate at some test tempera

    41、ture Tt, and ATis the temperature acceleration factor from Ttto Ts. JEP122G, 10/11JEP143C, 7/12JESD74A, 2/07#acceleration factor, voltage (AV): The acceleration factor due to changes in voltage. JEP143C, 7/12JESD74A, 2/07JEDEC Standard No. 88E Page 3 Terms, abbreviations, letter symbols, and definit

    42、ions References _ # The definition in this referenced publication has been reworded in this dictionary for clarity or consistency. acceleration model: A mathematical formulation of the relationship between (1) the rate (speed) of a degradation mechanism or the time-to-failure and (2) the conditions

    43、or stresses that caused the degradation. JEP143C, 7/12JEP148A, 12/08acceptance inspection: A sampling inspection or series of sampling inspections used to determine the suitability of a lot of material for shipment. JESD16-A, 4/95accept number: The maximum number of nonconforming components in the s

    44、ample for which acceptance of the lot is allowed under the sampling plan. JESD16-A, 4/95access time: The time interval between the application of a specific input pulse and the availability of valid signals at an output. JESD100-B, 12/99ac controller: A circuit that produces, from an ac input, an ac

    45、 output that is proportional to a control input. JESD14, 11/86#accumulator: A register in which one operand of an operation can be stored and subsequently replaced by the result of another operation. (Ref. IEC 824.) JESD100-B, 12/99 accuracy: The difference between the sample estimate and the popula

    46、tion parameter being estimated. EIA-557-B, 2/06JEP132, 7/98ac noise margin: The maximum transient or pulse voltage amplitude of extraneous signal that can be algebraically added to the noise-free worst-case input level without causing the output voltage to deviate from the allowable logic voltage le

    47、vel. RS-390-A, 2/81acoustic data, A-mode: Acoustic data collected at the smallest X-Y-Z region defined by the limitations of the given acoustic microscope. An A-mode display contains amplitude and phase/polarity information as a function of time of flight at a single point in the X-Y plane. Example

    48、of A-mode display J-STD-035, 5/99JEDEC Standard No. 88E Page 4 Terms, abbreviations, letter symbols, and definitions References _ # The definition in this referenced publication has been reworded in this dictionary for clarity or consistency. acoustic data, B-mode: Acoustic data collected along an X

    49、-Z or Y-Z plane versus depth (Z) using a reflective acoustic microscope. A B-mode scan contains amplitude and phase/polarity information as a function of time of flight at each point along the scan line. A B-mode scan furnishes a two-dimensional (cross-sectional) description along a scan line (X or Y) Example of B-mode display (bottom half of picture on left) J-STD-035, 5/99acoustic data, C-mode: Acoustic data collected in an X-Y plane at depth


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