1、RELATIVE SPECTRAL RESPONSE CURVES FOR SEMICONDUCTOR INFRARED DETECTORS PRlC E $1 .o0 FORMULATED BY EIA JEP78 69 m 3234600 000338b 8 m c Publidledby ELECTRONIC lNDUSTRlES ASSOCIATION Engineering Department 2001 Eye Street, N, W., Wmhington, D. C, 20006 EIA JEP78 69 m 3234600 0003387 T m : RELATIVE SP
2、ECTRAL RESPONSE CURVES FOR SEMICONDUCTOR INFRARED DETECTORS TABLE OF CONTENTS SECTION I RELATIVE: SPECTRAL RESPONSE CURVES SECTION II HASUREMNT PROCEDURES FOREWORD Page 1 Page 17 The S-curves appearing in this publication were compiled by the JS-4* Committee on Solid State Electro-Optical Devices an
3、d approved by the JEDEC Semiconductor Device Council, The intent of this document is to facilitate the specification of infrared detector diodes, partic- ularly in conjunction with the preparation of data for JEDEC type registration, Jr JS-4 gratefully acknowledges the assistance of Mr. W.L. Eisenma
4、n, Head, Detector Brand, Infrared Division, U,S. Naval Ordnance Laboratory, Corona, California, who was on the JS-4 task force that made the com- pilation, C) EIA JP78 69 m 3231.1600 0003388 L m SECTION I RELATIVE SPECTRAL RESPONSE CURVE Nominal Op era t ing S-NO b Photoeffect Components TempWature(
5、K) S-26 S-27 S-28 . S-29 S-30 S-31 S-32 S-33 S-34 S-35 S-36 S-37 S-38 S-39 S-40 photovoltaic photoconductive photovoltaic photoconductive photoconductive photoconductive photoconductive photoconductive photovoltaic photoconductive photovoltaic photovoltaic photoconductive photoconductive . photocond
6、uctive - InSb Ge :Au Ids PbSe Ge: Cu PbS PbS PbS InAs InSb GaAs Si PbSe PbSe Ge :Hg 77 77 195 77 300 195 77 300 77 300 300 300 195 4.2 4.2 The shaded areas of the following S-curves indicate the range of spectral shapes which may be expected if a particular type photodetector is obtained from severa
7、l different manufacturers. It should be noted that the spectral response of some types of photodetectors (particularly the lead-salt and intrinsic silicon detectors) can be varied during the manufacturing process. The curves shown here are representative of the more common, or “typical,“ detector ty
8、pes. “ EIA JEP78 69 m 3234600 0003389 3 m 9 8 7 6 fi a u) c 9. cn o4 2 Id I I S-26 4 3 7 EIA JEP78 b9 9 3234600 0003390 T II S-27 IO“ 9 3 I O 2 3 4 “ “ 6.0 . . 8.0 . I 0.6 X (microns) 12.0 16.0 EIA JEP78 69 m 3234600 0003393 3 m ! 1.0 * .- The spectral sensLtivity S-28 EIA JEP7B 69 W 3234600 0003392
9、 3 W “ c 1 S-29 EIA JEP78 h9 m 3234b00 0003393 5 m lo to “r_- “- OS I I S-30 c z I. 30 .35 4 A (microns) The spectral snnsitivity of photoconductive Ge:Cu operated at a temperature of 4.2K. t -6- EIA JEP78 b9 I 3234600 0003394 7 m S-31 i. os I .o The spectral of 300K. -_ , I, 5 I 2.5 3.0 X (microns)
10、 sensitivity of photoconductive PbS operated at a temperature 4 -7- IC 1 1 ! 2 I EIA JEP78 b9 m 3239600 0003395 9 m The spectral sens it ivity of S-32 2.0 X (microns) photoconductive - -8- PbS operated at a tempera ture EIA JEP78 69 W 3234600 0003376 O m S-33 I 3 - 5 2 1 EIA JEP78 69 M 3234600 00033
11、97 2 9 S-34 9 I c) 3.0 X (micrdns) 3 S . 4.0 - 10 - EIA JEP78 69 m 3234b00 0003398 4 m S-35 o, I 9- 5- r- 5- 5- 8- 5- !- c o I r- 7 k 6. o 7.0 The spectral sensitivity of photoconductive InSb operated at a temperature of 77K. loa “. EIA JEP78 b7 m 3234600 0003377 b m i 1 0.5 The spectral sensitivity
12、 of S-36 X (microns) photovoltaic GaAs operated at a temperature of EIA JEP78 b9 m 3234600 0003400 7 m EIA JEP7B 69 m 3234600 0003401 O m S- 38 sensitivity of 3.0 4* 5 X (microns) photoconductive PbSe operated at a temperature - 14 - of 9- 8- ?- 6- 5- 4- 3- 2- -0 EIA JEP78 b9 3234600 0003402 2 S-39
13、3 .o. 4 X (microns) 3 8.0 The spectral sensitivity of pho-t-oconductive“-PbSe operated at a temperature of 195K. ! r.“ -i - 15 - L- “1 -. EIA JEP78 b9 m 3234600 0003403 4 m 4 S-40 I I X (microns) I The spectral.sensitivity of ph?twonductive Ge:lg operated at a temperarure of 4.2 EIA JEP78 67 m 3234b
14、00 O003404 b m SECTION II MEASUREMENT PROCEDURES The spectral response curves were obtained using Leitz (or equiv- alent) double monochromators. rChree instruments, equipped with calcium fluoride, sodium chloride, and cesium iodine prisms, cover the spectral region of 0.3 to 40 microns, These instru
15、ments have proven convenient to use and relatively inexpensive, and the scattered light at the third slit is very small. (With one millimeter slits and a sensitive lead sulfide detector placed at the exit slit, no scattered energy is detected beyond the long wavelength cutoff of the detector,) Each
16、instrument is equipped with an optical bench which is securely attached to the base of the instrument, in line with the exit slit. This bench supports several optical elements and a radiation thermocouple which is used as a reference detector, A first-surface plane mirror is arranged 60 that it can
17、be alternately introduced or removed from the optical path. The instruments are also equipped with entrance optics, tungsten or Nernst glower sources, and 90 Hz and 10 HZ choppers. Both choppers are placed in the entrance beam. The 90 Hz chopper is used f.or the detector channel and the 10 Hz choppe
18、r for the therinocouple channel, The complete optical ar- rangement is shown schematically in Fig, 1. (Those mirrors not common to both the reference source and the device under test must be of such quality so as not to affect the spectral transmission.) The detector electronics consist of a cathode
19、 follower mounted in the detector enclsure, a preamplifier, and a narrowband tuned amplifier having a 5 Hz bandpass and a center frequency of 90 Hz, The thermocouple signal is amplified by means of a second narrowband tuned amplifier with a center frequency of 10 Hz and bandpass of 1 Hz, St is found
20、 convenient to operate both choppers simultaneously during the measurement. The relative spectral response of the detector is calculated from where Sd-(A) = the signal from the detector. St(h) = the signal from the thermocouple, Rt.(X) = the relative spectral response of the thermocouple, The ideal
21、reference detector would have a flat spectral response, good linearity and stability, high detectivity, and a fast response time, Lacking a reference detector with these characteristics, it.is common practice to use a radiation thermocouple whose spectral characteristics have been experimentally det
22、ermined . A/ EIA JEP78 69 m 3234600 0003405 B m % - 11 W,L. Eisenman, et al, “Black Radiation Detector“, J, Opt, Soc. Am., Vol, - 53, 729-734, June 1963, REFERENCES 1, R.F. Potter, et al., “The Measurements and Interpretation of Photo- detector Parameters,“ Proc, IRE, Vol. 47, pp, 1503-1507; Sept. 1
23、959 . 2. W.L. Wolf, Handbook of Military Infrared Technology, Office lbf Naval. Research, Washington, D.C., 1965. 3, P.W. Kruse, et al., Elements of Infrared Technology, John Wiley and Sons, New York, 1962, 4. W.L, Eisenman, “Procedures Used in the Study of the Properties of Photodetecrors,“ NOLC Report 541, Yuly 1961, 5. M.R. Holter, et al, Fundamentals of Infrared Technology, Macmillan Co, New York, 1962, - 18 - EIA JEP7B b9 323Yb00 0003YOb T - 19 - - EIA JEP78 69 3234600 0003407 L m I L 4 4-q O al to Pl ci O v O0 rlcn - 20 - N
