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    JEDEC JEP104C 01-2003 Reference Guide to Letter Symbols for Semiconductor Devices《半导体设备的字母符号的参考指南》.pdf

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    JEDEC JEP104C 01-2003 Reference Guide to Letter Symbols for Semiconductor Devices《半导体设备的字母符号的参考指南》.pdf

    1、JEDEC PUBLICATION Reference Guide to Letter Symbols for Semiconductor Devices JEP104C.01 (Minor Revision of JEP104-C, June 2002) MAY 2003 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC

    2、 Board of Directors level and subsequently reviewed and approved by the EIA General Counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of produ

    3、cts, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their

    4、adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications

    5、represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby an JEDEC standard or publication may be further processed and ultimately become an ANSI/EIA standard. No cl

    6、aims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703)907-7559 or www.jedec.or

    7、g Published by JEDEC Solid State Technology Association 2003 2500 Wilson Boulevard Arlington, VA 22201-3834 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting m

    8、aterial. PRICE: Please refer to the current Catalog of JEDEC Engineering Standards and Publications or call Global Engineering Documents, USA and Canada 1-800-854-7179, International (303) 397-7956 Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted b

    9、y JEDEC and may not be reproduced without permission. Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call

    10、 (703) 907-7559 JEDEC Publication No. 104C.01 -i- REFERENCE GUIDE TO LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES Foreword This publication provides a quick reference to the letter symbols and corresponding terms that are defined in JESD77-B, Terms, Definitions, and Letter Symbols for Discrete Semicondu

    11、ctor and Optoelectronic Devices; JESD99-A, Terms, Definitions, and Letter Symbols for Microelectronic Devices, and JESD100-B, Terms, Definitions, and Letter Symbols for Microcomputers, Microprocessors, and Memory Integrated Circuits. It is intended to simplify interpretation of data sheets and speci

    12、fications and to promote the uniform use of these symbols. The symbols relate to ratings and characteristics found in data sheets and other specifications. Some abbreviations used in lieu of symbols are also included. These symbols and abbreviations include those used for all products within the sco

    13、pe of JEDEC. Sometimes, in different product areas, different symbols are applicable to similar concepts and, in other cases, the same symbol is applied to different concepts. The user must bear this in mind and consider context. Annex A identifies the product associated with each referenced clause

    14、or subclause of the source standards (JESD77-B, JESD99-A, and JESD100-B). Annex B is provided as an aid to determining what symbol should be used and is organized by term. Annex C lists commonly used units of measurement. Annex D lists the metric multipliers used with the units of measurement. The m

    15、aterial contained in this publication was compiled under the cognizance of the JC-10 Committee on Terms, Definitions, and Symbols. The concept for this publication was approved by the JEDEC Solid State Products Engineering Council under Council Ballot JCB-92-43. The addition of Annex B was approved

    16、by the JEDEC Board of Directors under Board Ballot JCB-01-117. JEP104C replaces JEP104-B. JEP104C.01 is the first minor revision of JEP104C, June 2002. Annex E briefly shows entries that have changed. Introduction Symbols are listed in the following order: Roman letters, Greek letters, numerals, and

    17、 mathematical symbols. Subscripting and punctuation marks are ignored for the purposes of alphabetizing. Uppercase letters precede lowercase letters for symbols that are otherwise identical. JEDEC Publication No. 104C.01 -ii- Introduction (contd) After the letter symbol (or abbreviation), the term a

    18、ssociated with the symbol is given with a reference to the JEDEC standard in which the definition and other details may be found. See annex A to determine the products associated with the referenced subclauses. As mentioned in the foreword, different symbols (particularly in the subscripts) are some

    19、times used for similar concepts for different products. EXAMPLE Threshold voltages are symbolized by different sets of subscripts, depending on the product. VGS(th)gate-source threshold voltage 77/4.3.2 is found in JESD77-B, subclause 4.3.2, and applies for field-effect transistors; VITinput thresho

    20、ld voltage 99/2.3.2 is found in JESD99-A, subclause 2.3.2, and applies for integrated circuits; and V(TO)on-state threshold voltage, dc value, no alternating component 77/6.1.2 is found in JESD77-B, subclause 6.1.2, and applies for thyristors. The same symbol is sometimes used for different concepts

    21、. EXAMPLE IDhas three very different meanings respectively for field-effect transistors (4.3.2 of JESD77-B), thyristors (6.1.2 of JESD77-B) and thyristor surge protective devices (7.2.2 of JESD77-B), and varistor surge protective devices (7.1.2 of JESD77-B). IDdrain current, dc or 77/4.3.2 off-state

    22、 current, dc value, no alternating component 77/6.1.2 or 77/7.2.2 standby current 77/7.1.2 JEDEC Publication No. 104C.01 Page 1 REFERENCE GUIDE TO LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES SYMBOL TERM REF. A amplification, voltage or current 99/2.1.2.1 ADarea, detector 77/5.2.2 AVCcommon-mode voltage

    23、 amplification, large-signal 99/2.4.2 Avccommon-mode voltage amplification, small-signal 99/2.4.2 AVDdifferential voltage amplification, large-signal 99/2.4.2 Avddifferential voltage amplification, small-signal 99/2.4.2 AVSsingle-ended voltage amplification, large-signal 99/2.4.2 Avssingle-ended vol

    24、tage amplification, small-signal 99/2.4.2 B bandwidth (also BW) 99/2.4.3 b susceptance 77/1.2.1 bfssmall-signal forward transfer susceptance, common-source (also yfs(imag) 77/4.3.2 bissmall-signal input susceptance, common-source (also yis(imag) 77/4.3.2 Bnnoise equivalent bandwidth (formerly f) 77/

    25、5.2.2 BOMbandwidth, maximum output swing 99/2.4.3 bossmall-signal output susceptance, common-source (also yos(imag) 77/4.3.2 brssmall-signal reverse transfer susceptance, common-source (also yrs(imag) 77/4.3.2 BV. See V(BR).BW bandwidth (also B) 99/2.4.3 JEDEC Publication No. 104C.01 Page 2 SYMBOL T

    26、ERM REF. C capacitance 77/1.2.1 77/7.2.2 99/2.1.2.1 Cccase capacitance 77/3.6.2 Ccbor Ccb(dir)interterminal capacitance, collector-base 77/4.1.2 Cceor Cce(dir)interterminal capacitance, collector-emitter 77/4.1.2 Cdsdrain-source capacitance 77/4.3.2 Cdudrain-substrate capacitance 77/4.3.2 Cebor Ceb(

    27、dir)interterminal capacitance, emitter-base 77/4.1.2 CF clamping factor 77/7.1.2 CFfeedthrough capacitance 99/2.5.2.3 Cgsgate-source capacitance 77/4.3.2 Ciboopen-circuit input capacitance, common-base 77/4.1.2 Cibsshort-circuit input capacitance, common-base 77/4.1.2 Cieoopen-circuit input capacita

    28、nce, common-emitter 77/4.1.2 Ciesshort-circuit input capacitance, common-emitter 77/4.1.2 77/4.4.2 Cioinput-to-output internal capacitance; transcapacitance 77/5.4.2 Cissshort-circuit input capacitance, common-source 77/4.3.2 Cjjunction capacitance 77/3.6.2 CMRR common-mode rejection ratio (also kCM

    29、R) 99/2.4.8 COoff-state capacitance 77/7.2.2 JEDEC Publication No. 104C.01 Page 3 SYMBOL TERM REF. Coboopen-circuit output capacitance, common-base 77/4.1.2 Cobsshort-circuit output capacitance, common-base 77/4.1.2 Coeoopen-circuit output capacitance, common-emitter 77/4.1.2 Coesshort-circuit outpu

    30、t capacitance, common-emitter 77/4.1.2 77/4.4.2 Cossshort-circuit output capacitance, common-source 77/4.3.2 Crbsshort-circuit reverse transfer capacitance, common-base 77/4.1.2 Crcsshort-circuit reverse transfer capacitance, common-collector 77/4.1.2 Crecommon-emitter reverse transfer capacitance 7

    31、7/4.4.2 Cresshort-circuit reverse transfer capacitance, common-emitter 77/4.1.2 Crssshort-circuit reverse transfer capacitance, common-source 77/4.3.2 Cttotal capacitance 77/3.6.2 Ctcdepletion-layer capacitance, collector 77/4.1.2 CTE charge-transfer efficiency (also ) 99/2.7.3 Ctedepletion-layer ca

    32、pacitance, emitter 77/4.1.2 CTI charge-transfer inefficiency (also ) 99/2.7.3 CTR (preferred symbol is hF) current transfer ratio 77/5.4.2 Ct1/Ct2capacitance ratio 77/3.6.2 (diT/dt)cr critical rate of rise of on-state current 77/6.1.2 dv(com)/dt critical rate of rise of commutating voltage short for

    33、m of (dvD(com)/dt)cr 77/6.1.2 (dvD(com)/dt)cr critical rate of rise of commutating voltage 77/6.1.2 JEDEC Publication No. 104C.01 Page 4 SYMBOL TERM REF. (dvD/dt)cr critical rate of rise of off-state voltage 77/6.1.2 dv/dt critical rate of rise of off-state voltage short form of (dvD/dt)cr 77/6.1.2

    34、D* detectivity, D-star 77/5.2.2 D* detectivity, normalized 77/5.2.2 E energy or 77/1.2.1 illuminance (illumination) or 77/5.2.2 irradiance 77/5.2.2 EDlinearity error, differential 99/2.5.2.4 EDQturn-off energy loss 77/6.1.2 Eeirradiance 77/5.2.2 EFfeedthrough error 99/2.5.2.4 EFSfull-scale error 99/

    35、2.5.2.4 EGgain error 99/2.5.2.4 ELlinearity error, end-point 99/2.5.2.4 EL(adj)linearity error, best-straight-line 99/2.5.2.4 EOoffset error 99/2.5.2.4 Eoffturn-off switching loss 77/4.4.2 Eonturn-on switching loss 77/4.4.2 EPpedestal (error) 99/2.5.2.4 EROroll-over error 99/2.5.2.4 JEDEC Publicatio

    36、n No. 104C.01 Page 5 SYMBOL TERM REF. Erstotal switching loss 77/4.4.2 ETtotal error 99/2.5.2.4 EVilluminance (illumination) 77/5.2.2 EZSzero-scale error 99/2.5.2.4 F spot noise figure; spot noise factor 77/2.2 99/2.4.10 _ F average noise figure; average noise factor 77/2.2 99/2.4.10 f frequency 77/

    37、1.2.1 99/2.1.2.1 fcconversion rate 99/2.5.2.3 fcocutoff frequency 77/3.6.2 fhfbsmall-signal short-circuit forward current transfer cutoff frequency, common-base 77/4.1.2 fhfcsmall-signal short-circuit forward current transfer ratio cutoff frequency, common-collector 77/4.1.2 fhfesmall-signal short-c

    38、ircuit forward current transfer ratio cutoff frequency, common-emitter 77/4.1.2 fmaxmaximum clock frequency or 99/2.3.5 maximum frequency of oscillation 77/4.1.2 fmodmodulation frequency 77/5.2.2 _ Fooverall average noise figure 77/3.2.2 _ Fosstandard overall average noise figure 77/3.2.2 FS full sc

    39、ale 99/2.5.2.1 JEDEC Publication No. 104C.01 Page 6 SYMBOL TERM REF. fsbfrequency of unity forward transmission coefficient, common-base 77/4.1.2 fscfrequency of unity forward transmission coefficient, common-collector 77/4.1.2 fsdfrequency of unity forward transmission coefficient, common-drain 77/

    40、4.3.2 fsefrequency of unity forward transmission coefficient, common-emitter 77/4.1.2 fsgfrequency of unity forward transmission coefficient, common-gate 77/4.3.2 FS(nom) full-scale value, nominal also FSR(nom) 99/2.5.2.1 FSR full-scale range, (practical) also FSR(pr) 99/2.5.2.1 FSR(nom) full-scale

    41、range, nominal also FS(nom) 99/2.5.2.1 FSR(pr) full-scale range, (practical) also FSR 99/2.5.2.1 fssfrequency of unity forward transmission coefficient, common-source 77/4.3.2 FS full-scale, negative 99/2.5.2.1 FS+ full-scale, positive 99/2.5.2.1 fTtransition frequency; frequency at which small-sign

    42、al forward current transfer ratio (common-emitter) extrapolates to unity 77/4.1.2 f1frequency of unity current transfer ratio 77/4.1.2 G gain, power 77/1.2.1 99/2.1.2.1 g conductance 77/1.2.1 GA glitch area 99/2.5.2.3 JEDEC Publication No. 104C.01 Page 7 SYMBOL TERM REF. GE glitch energy 99/2.5.2.3

    43、gfssmall-signal forward transfer conductance, common-source (also yfs(real) 77/4.3.2 gissmall-signal input conductance, common-source (also yis(real) 77/4.3.2 gMBstatic transconductance, common-base 77/4.1.2 gmbUse preferred symbol yfb. 77/4.1.2 gMCstatic transconductance, common-collector 77/4.1.2

    44、gmcUse preferred symbol yfc. 77/4.1.2 gMEstatic transconductance, common-emitter 77/4.1.2 gmeUse preferred symbol yfe. 77/4.1.2 gmecommon-emitter small-signal transconductance 77/4.4.2 gossmall-signal output conductance, common-source (also yos(real) 77/4.3.2 GPinsertion power gain, large-signal or

    45、99/2.4.2 power gain, large-signal 99/2.4.2 Gpinsertion power gain, small-signal or 99/2.4.2 power gain, small-signal 99/2.4.2 GPBlarge-signal insertion power gain, common-base 77/4.1.2 Gpbsmall-signal insertion power gain, common-base 77/4.1.2 GPClarge-signal insertion power gain, common-collector 7

    46、7/4.1.2 Gpcsmall-signal insertion power gain, common-collector 77/4.1.2 GPElarge-signal insertion power gain, common-emitter 77/4.1.2 JEDEC Publication No. 104C.01 Page 8 SYMBOL TERM REF. Gpesmall-signal insertion power gain, common-emitter 77/4.1.2 Gpgsmall-signal insertion power gain, common-gate

    47、77/4.3.2 Gpssmall-signal insertion power gain, common-source 77/4.3.2 grssmall-signal reverse transfer conductance, common-source (also yrs(real) 77/4.3.2 GTtransducer power gain, large-signal 99/2.4.2 Gttransducer power gain, small-signal 99/2.4.2 GTBlarge-signal transducer power gain, common-base

    48、77/4.1.2 Gtbsmall-signal transducer power gain, common-base 77/4.1.2 GTClarge-signal transducer power gain, common-collector 77/4.1.2 Gtcsmall-signal transducer power gain, common-collector 77/4.1.2 GTElarge-signal transducer power gain, common-emitter 77/4.1.2 Gtesmall-signal transducer power gain,

    49、 common-emitter 77/4.1.2 Gtgsmall-signal transducer power gain, common-gate 77/4.3.2 Gtssmall-signal transducer power gain, common-source 77/4.3.2 h matrix parameter 77/1.2.1 hFcurrent transfer ratio 77/5.4.2 hFBstatic forward current transfer ratio, common-base 77/4.1.2 hfbsmall-signal short-circuit forward current transfer ratio, common-base 77/4.1.2 hFCstatic forward current transfer ratio, common-collector 77/4.1.2 JEDEC Publication No. 104C.01 Page 9 SYMBOL TERM REF. hfcsmall-signal short-circuit forward current transfer ratio, common-collector 77/4.1.2 hFEs


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