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    EN 62761-2014 en Guidelines for the measurement method of nonlinearity for surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices in radio frequency (RF).pdf

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    EN 62761-2014 en Guidelines for the measurement method of nonlinearity for surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices in radio frequency (RF).pdf

    1、BSI Standards PublicationGuidelines for the measurement method of nonlinearity for surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices in radio frequency (RF)BS EN 62761:2014National forewordThis British Standard is the UK implementation of EN 62761:2014. It is identical to IEC 62761:20

    2、14.The UK participation in its preparation was entrusted to Technical Committee EPL/49, Piezoelectric devices for frequency control and selection.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the nece

    3、ssary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2014.Published by BSI Standards Limited 2014ISBN 978 0 580 77033 3ICS 31.140Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was pu

    4、blished under the authority of theStandards Policy and Strategy Committee on 30 June 2014.Amendments/corrigenda issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 62761:2014EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 62761 May 2014 ICS 31.140 English Version Guidelines

    5、 for the measurement method of nonlinearity for surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices in radio frequency (RF) (IEC 62761:2014) Lignes directrices pour la mthode de mesure des non-linarits pour les dispositifs ondes acoustiques de surface (OAS) et ondes acoustiques de volum

    6、e (OAV) pour frquences radiolectriques (RF) (CEI 62761:2014) Leitfaden zum Messverfahren fr die Nichtlinearitt von Oberflchenwellen-(OFW-) und Volumenwellen- (BAW-)Bauelementen fr Hochfrequenzanwendungen (IEC 62761:2014) This European Standard was approved by CENELEC on 2014-03-26. CENELEC members a

    7、re bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to

    8、 the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Mana

    9、gement Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ir

    10、eland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches K

    11、omitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2014 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62761:2014 E BS EN 62761:2014EN 62761:2014 - 2 - Foreword The text of document

    12、 49/1091/FDIS, future edition 1 of IEC 62761, prepared by IEC/TC 49 “Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62761:2014. The following dat

    13、es are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2014-12-26 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2017-03-26 Attention is dra

    14、wn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62761:2014 was approved by CENELEC as a

    15、European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60862-1:2003 NOTE Harmonized as EN 60862-1:2003 (not modified). IEC 62047-7:2011 NOTE Harmonized as EN 62047-7:2011 (not modified). IEC 62575-2

    16、:2012 NOTE Harmonized as EN 62575-2:2012 (not modified). BS EN 62761:2014 2 62761 IEC:2014 CONTENTS INTRODUCTION . 5 1 Scope 6 2 Normative references 6 3 Terms and definitions 6 3.1 General terms 6 3.2 Response related terms . 8 3.3 Nonlinearity related terms 9 4 Basic properties of nonlinear system

    17、 . 10 4.1 Behaviours of nonlinear system . 10 4.2 Measurement setup for nonlinearity . 12 4.2.1 Harmonics measurement 12 4.2.2 IMD Measurement 14 4.3 Influence of circuit impedance for nonlinearity measurement 16 4.4 Influence of circuit nonlinearity . 18 5 Nonlinearity measurement . 18 5.1 Measurem

    18、ent equipment 18 5.1.1 Signal generator and power amplifier 18 5.1.2 Spectrum analyser 18 5.1.3 Network analyser (optional) 19 5.1.4 Accessories 19 5.2 Measurement Specifications 19 5.3 Measurement procedure 21 5.3.1 DUT check 21 5.3.2 Setup and check . 21 5.3.3 Data acquisition 21 5.3.4 DUT final c

    19、heck 22 5.4 Report 22 Bibliography 23 Figure 1 FBAR configuration 7 Figure 2 SMR configuration 8 Figure 3 Fundamental and harmonics output as a function of input signal power 12 Figure 4 Basic setup for the harmonics measurement 13 Figure 5 Practical setup for the harmonics measurement . 13 Figure 6

    20、 Setup when the circulator/isolator is used 14 Figure 7 Practical setup for the IMD measurement (two-tone test) . 15 Figure 8 Practical setup for three-tone measurement . 16 Figure 9 Setup for IMD2 measurement of SAW/BAW antenna duplexers 16 Figure 10 Range of deviation resulting from in dB . 17 Fig

    21、ure 11 Ideal IMD2 measurement setup for RF SAW/BAW duplexers 20 Figure 12 Setup for the measurement of input signal intensity . 22 Table 1 Frequencies faand fbof input signals and target frequency ft. 20 BS EN 62761:201462761 IEC:2014 5 INTRODUCTION Radio frequency (RF) surface acoustic wave (SAW) a

    22、nd bulk acoustic wave (BAW) devices such as filters and duplexers are now widely used in various communication systems. Due to their small physical size, energy concentration causes generation of nonlinear signals even when relatively small electric power is applied, and they may interfere with the

    23、communications. The features of these RF SAW/BAW devices are their small size, light weight, omission of impedance and/or frequency tuning, high stability and high reliability. Nowadays, RF SAW/BAW devices with low insertion attenuation are widely used in various applications in the RF range. In suc

    24、h applications, suppression of transmission and generation of unnecessary signals is highly demanded. Since nonlinearity in the RF SAW/BAW devices will generate such signals, its ultimate suppression is always crucial. In the same time, measurement method of nonlinear signals should be well establis

    25、hed from industrial points of view. In passive filters like RF SAW/BAW ones, frequency selectivity is realized by impedance matching/mismatching with peripheral circuitry. Thus impedance of peripheral circuitry shall be set as specified for reliable and reproducible filter characterization. This is

    26、also true for non-linear characteristics. It should be noted that even-order non-linearity, which is not common in general passive electronic components, may occur in RF SAW/BAW devices employing piezoelectric materials for electrical excitation and detection of SAWs/BAWs. This is because crystallog

    27、raphic asymmetry is necessary for existence of piezoelectricity. Therefore, measurement methods should be specifically established for non-linear behavior of RF SAW/BAW devices. This standard has been compiled in response to a generally expressed desire on the part of both users and manufacturers fo

    28、r general Information on test condition guidance of RF SAW/BAW filters, so that the filters may be used to their best advantage. To this end, general and fundamental characteristics have been explained in this standard. BS EN 62761:2014 6 62761 IEC:2014 GUIDELINES FOR THE MEASUREMENT METHOD OF NONLI

    29、NEARITY FOR SURFACE ACOUSTIC WAVE (SAW) AND BULK ACOUSTIC WAVE (BAW) DEVICES IN RADIO FREQUENCY (RF) 1 Scope This International Standard gives the measurement method for nonlinear signals generated in the radio frequency (RF) surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices such as f

    30、ilters and duplexers, which are used in telecommunications, measuring equipment, radar systems and consumer products. The IEC 62761 includes basic properties of non-linearity, and guidelines to setup the measurement system and to establish the measurement procedure of nonlinear signals generated in

    31、SAW/BAW devices. It is not the aim of this standard to explain theory, nor to attempt to cover all the eventualities which may arise in practical circumstances. This standard draws attention to some of the more fundamental questions, which the user has to consider before he/she places an order for a

    32、n RF SAW/BAW device for a new application. Such a procedure will be the users insurance against unsatisfactory performance. 2 Normative references None 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 General terms 3.1.1 BAW duplexer antenna d

    33、uplexer composed of RF BAW resonators 3.1.2 BAW filter filter characterised by a bulk acoustic wave which is usually generated by a pair of electrodes and propagates along a thin film thickness direction 3.1.3 bulk acoustic wave BAW acoustic wave, propagating between the top and bottom surface of a

    34、piezoelectric structure and traversing the entire thickness of the piezoelectric bulk Note 1 to entry: The wave is excited by metal electrodes attached to both sides of the piezoelectric layer. 3.1.4 cut-off frequency frequency of the pass-band at which the relative attenuation reaches a specified v

    35、alue BS EN 62761:201462761 IEC:2014 7 3.1.5 duplexer device used in the frequency division duplex system, which enables the system to receive and transmit signal through a common antenna simultaneously 3.1.6 film bulk acoustic resonator FBAR thin film BAW resonator consisting of a piezoelectric laye

    36、r sandwiched between two electrode layers with stress free top and bottom surface supported mechanically at the edge on a substrate with cavity structure as shown in Figure 1 or membrane structure as an example Note 1 to entry: This note applies to the French language only. h Piezoelectric material

    37、Upper electrode Supporting substrate Lower electrode Supporting layer IEC 0652/14 Figure 1 FBAR configuration 3.1.7 Receiver (Rx) band frequency band used in a receiver part to detect signals from an antenna 3.1.8 Rx filter filter used in a receiver part to eliminate unnecessary signals Note 1 to en

    38、try: The Rx filter is a basic part of a duplexer. 3.1.9 SAW filter filter characterised by one or more surface acoustic wave transmission line or resonant elements, where the surface acoustic wave is usually generated by an interdigital transducer and propagates along a substrate 3.1.10 solidly moun

    39、ted resonator SMR BAW resonator, supporting the electrode/piezoelectric layer/electrode structure by a sequence of additional thin films of alternately low and high acoustic impedance Zawith quarter wavelength layer, and these layers act as acoustic reflectors and decouple the resonator acoustically

    40、 from the substrate as shown in Figure 2 for example Note 1 to entry: This note applies to the French language only. BS EN 62761:2014 8 62761 IEC:2014 h Piezoelectric material Upper electrode Lower electrode Supporting substrate Lower Zalayer Higher Zalayer IEC 0653/14 Figure 2 SMR configuration 3.1

    41、.11 surface acoustic wave SAW acoustic wave, propagating along a surface of an elastic substrate, whose amplitude decays exponentially with substrate depth SOURCE: IEC 60862-1:2003, 2.2.1.1 3.1.12 transmitter (Tx) band frequency band used in a transmitter part to emit signals from an antenna 3.1.13

    42、Tx filter filter used in a transmitter part to eliminate unnecessary signals. It is a basic part of a duplexer 3.2 Response related terms 3.2.1 insertion attenuation logarithmic ratio of the power delivered directly to the load impedance before insertion of the duplexer to the power delivered to the

    43、 load impedance after insertion of the duplexer 3.2.2 pass band band of frequencies in which the relative attenuation is equal to or less than a specified value 3.2.3 reflectivity dimensionless measure of the degree of mismatch between two impedances Z1and Z2, i.e., 2121ZZZZ+, where Z1and Z2represen

    44、t respectively the input and source impedance or the output and load impedance Note 1 to entry: The absolute value of reflectivity is called the reflection coefficient. BS EN 62761:201462761 IEC:2014 9 3.2.4 relative attenuation difference between the attenuation at a given frequency and the attenua

    45、tion at the reference frequency 3.2.5 stop band band of frequencies in which the relative attenuation is equal to or greater than a specified value 3.2.6 transition band band of frequencies between the cut-off frequency and the nearest point of the adjacent stop band 3.3 Nonlinearity related terms 3

    46、.3.1 harmonics non-linear distortion of a device response characterized by the appearance of frequencies at the output equal to integral multiples of the original signal frequency 3.3.2 hysteresis memory effect phenomenon where the output is not determined only from the input and depends also on the

    47、 internal state, in other words, the history of the input 3.3.3 intercept point IP power level where intensity of the non-linear signal generated by the intermodulation distortion (IMD) is equal to that of two input signals at the output Note 1 to entry: This note applies to the French language only

    48、. 3.3.4 intermodulation distortion IMD non-linear distortion of a device response characterized by the appearance of frequencies at the output equal to the differences (or sums) of integral multiples of the two or more component frequencies present at the input Note 1 to entry: This note applies to

    49、the French language only. 3.3.5 jammer signal incoming unnecessary signal 3.3.6 nonlinear distortion distortion of the signal waveform caused by nonlinearity of the system where the signal transmits Note 1 to entry: When the distortion is originated to the frequency dependence of the system signal transfer function, it is called the linear distortion. 3.3.7 one decibel compression point input power where gain, the ratio of the output to the input, decreases by 1 dB from the va


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