1、BRITISH STANDARD BS EN 60749-17:2003 Incorporating Corrigendum No. 1 Semiconductor devices Mechanical and climatic test methods Part 17: Neutron irradiation The European Standard EN 60749-17:2003 has the status of a British Standard ICS 31.080.01 BS EN 60749-17:2003 This British Standard was publish
2、ed under the authority of the Standards Policy and Strategy Committee on 19 June 2003 BSI 29 June 2004 ISBN 0 580 42063 9 National foreword This British Standard is the official English language version of EN 60749-17:2003. It is identical with IEC 60749-17:2003. The UK participation in its preparat
3、ion was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international or European publications referred
4、to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions
5、 of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or p
6、roposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 6, an inside back cover and a back cover. The B
7、SI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date Comments 15223 Corrigendum No. 1 29 June 2004 Change to first paragraph of the national forewordEUROPEAN STANDARD EN 60749-17 NORME EUROPENNE EUROPISCHE NORM
8、April 2003 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2003 CENELEC - All rights of exploitation in any form and by any mean
9、s reserved worldwide for CENELEC members. Ref. No. EN 60749-17:2003 E ICS 31.080.01 English version Semiconductor devices Mechanical and climatic test methods Part 17: Neutron irradiation (IEC 60749-17:2003) Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 17: Irradiation
10、aux neutrons (CEI 60749-17:2003) Halbleiterbauelemente Mechanische und klimatische Prfverfahren Teil 17: Neutronenbestrahlung (IEC 60749-17:2003) This European Standard was approved by CENELEC on 2003-04-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulat
11、e the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard e
12、xists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national el
13、ectrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom. EN 60749-17:2003 - 2 - Foreword The text of document
14、47/1668/FDIS, future edition 1 of IEC 60749-17, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-17 on 2003-04-01. The following dates were fixed: latest date by which the EN has to be implemented at national level b
15、y publication of an identical national standard or by endorsement (dop) 2004-01-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2006-04-01 _ Endorsement notice The text of the International Standard IEC 60749-17:2003 was approved by CENELEC as a Euro
16、pean Standard without any modification. _ Page2 EN6074917:200360749-17 IEC:2003 3 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 17: Neutron irradiation 1 Scope and object The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to degradati
17、on in the neutron environment. The tests described herein are applicable to integrated circuits and discrete semiconductor devices. This test is intended for military- and space-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the de
18、gradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 4). 2 Test apparatus 2.1 Test instruments Test instr
19、umentation to be used in the radiation test shall be standard laboratory electronic test instruments such as power supplies, digital voltmeters, and pico-ammeters, etc., capable of measuring the electrical parameters required. 2.2 Radiation source The radiation source used in the test shall be in a
20、pulsed reactor. 2.3 Dosimetry equipment a) Fast-neutron threshold activation foils such as 32 S, 54 Fe, and 58 Ni. b) CaF2 thermoluminescence dosimeters (TLDs). c) Appropriate activation foil counting and TLD readout equipment. 2.4 Dosimetry measurements 2.4.1 Neutron fluences The neutron fluence us
21、ed for device irradiation shall be obtained by measuring the amount of radioactivity induced in a fast-neutron threshold activation foil such as 32 S, 54 Fe, or 58 Ni, irradiated simultaneously with the device. A standard method for converting the measured radioactivity in the specific activation fo
22、il employed into a neutron fluence shall be used. The conversion of the foil radioactivity into a neutron fluence requires a knowledge of the neutron spectrum incident on the foil. If the spectrum is not known, it shall be determined by use of a recognised national standard or equivalent. Page3 EN60
23、74917:200360749-17 IEC:2003 4 Once the neutron energy spectrum has been determined and the equivalent monoenergetic fluence calculated, then an appropriate monitor foil (such as 32 S, 54 Fe, or 58 Ni) should be used in subsequent irradiations to determine the neutron fluence. Thus, the neutron fluen
24、ce is described in terms of the equivalent monoenergetic neutron fluence per unit monitor response. Use of a monitor foil to predict the equivalent monoenergetic neutron fluence is valid only if the energy spectrum remains constant. 2.4.2 Dose measurements If absorbed dose measurements of the gamma-
25、ray component during the device test irradiations are required, then such measurements shall be made with CaF2 thermo- luminescence dosimeters (TLDs), or their equivalent. These TLDs shall be used in accordance with the recommendations of recognised national standards or their equivalent. 3 Procedur
26、e 3.1 Safety requirements Neutron irradiated devices may be radioactive. Handling and storage of test specimens or equipment subjected to radiation environments shall be governed by the procedures established by the local Radiation Safety Officer or Health Physicist. 3.2 Test samples A test sample s
27、hall be randomly selected and consist of a minimum of 10 devices, unless otherwise specified. All sample devices shall have met all the requirements of the relevant specification for that device. Each device shall be serialised to enable pre- and post-test identification and comparison. 3.3 Pre-expo
28、sure 3.3.1 Electrical tests Pre-exposure electrical tests shall be performed on each device as required. Where delta parameter limits are specified, the pre-exposure data shall be recorded. 3.3.2 Exposure set-up Each device shall be mounted unbiased and have its terminal leads either all shorted or
29、all open. For MOS devices or any microcircuit containing an MOS element, all leads shall be shorted. An appropriate mounting fixture which will accommodate both the sample and the required dosimeters (at least one actuation foil and one CaF2 TLD) shall be used. The configuration of the mounting fixt
30、ure will depend on the type of reactor facility used and should be discussed with the reactor facility personnel. Test devices shall be mounted in such a way that the total variation of fluence over the entire sample does not exceed 20 percent. Reactor facility personnel shall determine both the pos
31、ition of the fixture and the appropriate pulse level required to achieve the specified neutron fluence level. Page4 EN6074917:200360749-17 IEC:2003 5 3.4 Exposure The test devices and dosimeters shall be exposed to the neutron fluence as specified. If multiple exposures are required, the post-radiat
32、ion electrical tests shall be performed (see 3.5.1) after each exposure. A new set of dosimeters is required for each exposure level. Since the effects of neutrons are cumulative, each additional exposure will have to be determined to give the specified total accumulated fluence. All exposures shall
33、 be made at 20 C 10 C and shall be correlated to a 1 MeV equivalent fluence, as described in 2.4.1. 3.5 Post-exposure 3.5.1 Electrical tests Test items shall be removed only after clearance has been obtained from the Health Physicist at the test facility. The temperature of the sample devices must b
34、e maintained at 20 C 10 C from the time of the exposure until the post-electrical tests are made. The post- exposure electrical tests as specified shall be made within 24 h after the completion of the exposure. If the residual radioactivity level is too high for safe handling this level to be determ
35、ined by the local Radiation Safety Officer , the elapsed time before post-test electrical measurements are made may be extended to 1 week. Alternatively, provisions may be made for remote testing. All required data must be recorded for each device after each exposure. 3.5.2 Anomaly investigation Dev
36、ices which exhibit previously defined anomalous behaviour (e.g., non-linear degradation of 1/ ) shall be subjected to failure analysis. 3.6 Reporting As a minimum, the report shall include the device type number, serial number, manufacturer, controlling specification, the date code and other identif
37、ying numbers given by the manu- facturer. Each data sheet shall include radiation test date, electrical test conditions, radiation exposure levels, ambient conditions as well as the test data. Where other than specified electrical test circuits are employed, the parameter measurement circuits shall
38、accompany the data. Any anomalous incidents during the test shall be fully explained in footnotes to the data. 4 Summary The following details shall be specified in the request for test or, when applicable, the relevant specification: a) device types (see 3.6); b) quantities of each device type to b
39、e tested, if other than specified in 3.2; c) electrical parameters to be measured in pre- and post-exposure tests (see 3.3.1 and 3.5.1); d) criteria for pass, fail, record actions on tested devices (see 3.3.1, 3.5.1 and 3.6); e) criteria for anomalous behaviour designation (see 3.5.2); f) radiation
40、exposure levels (see 3.4); g) test instrument requirements (see clause 2); Page5 EN6074917:200360749-17 IEC:2003 6 h) radiation dosimetry requirements, if other than 2.3; i) ambient temperature, if other than specified herein (see 3.4 and 3.5.1); j) requirements for data reporting and submission, wh
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