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    DLA SMD-5962-98606-1999 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVER WITH THREE- STATE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 低压CMOS 带三态输出的八路双提供翻译式收.pdf

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    DLA SMD-5962-98606-1999 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVER WITH THREE- STATE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 低压CMOS 带三态输出的八路双提供翻译式收.pdf

    1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDREVSHEETREVSHEET 15 16 17 18REV STATUS REVOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Joseph A. KerbyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCharles F. Saffle, Jr.COLUMBUS, OHIO 43216THIS DRAWING I

    2、S AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. Poelking MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS,OCTAL DUAL SUPPLY TRANSLATINGAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE99-01-07TRANSCEIVER WITH THREE-STATE OUTPUTS,MONOLITHIC SILICONAMSC N/A REVISION LEVEL SIZEA CAGE CODE

    3、67268 5962-98606SHEET 1 OF 18DSCC FORM 2233APR 97 5962 -E099-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98606DEFENSE SUPPL

    4、Y CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishe

    5、s are available and are reflected in the Partor Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 - 98606 01 Q K XFederal RHA Device Device Case Lead stock class designa

    6、tor type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class

    7、 M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 54

    8、LVX4245 Octal dual supply transl ating transceiverwith three-state outputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self -certificatio n to the requirements f

    9、or MIL-STD-883 compliant,non -JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals

    10、 Package styleK GDFP2-F24 or CDFP3-F24 24 Flat packL GDIP3-T24 or CDIP4-T24 24 Dual-in-line3 CQCC1-N28 28 Square leadless chip carrier 1 /1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendixA for device class M.1 / This package is

    11、 not available from an approved source of supply as of the date of this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98606DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 3

    12、DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CCA , V CCB ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) -0.5 V dc to V CCA + 0.5 V dcDC input / output voltage range, An (V I/O ) -0.5 V dc to V CCA + 0.5 V dcDC input / output voltage range, Bn (V I/O

    13、 ) -0.5 V dc to V C CB + 0.5 V dcDC input diode current (I IK ) 20 mADC output diode current (I OK ) . 50 mADC output source or sink current (I OUT ) (per pin) 50 mADC V CC or GND current . 200 mAMaximum power dissipation (P D ) 500 mWStorage temperature range (T STG ) -65 C to +150 CLead temperatur

    14、e (soldering, 10 seconds) . +300 CThermal resistance, junction -to -case ( JC ) See MIL -STD -1835Junction temperature (T J ) +175 C 4 /1.4 Recommended operating conditions . 2 / 3 / 5 /Supply voltage range (V CCA ) +4.5 V dc to +5. 5 V dcSupply voltage range (V CC B ) +2.7 V dc to +3.6 V dcInput vo

    15、ltage range, OE, T/R (V IN ) +0.0 V dc to V CCAInput / output voltage range, An (V I/O ) +0.0 V dc to V CCAInput / output voltage range, Bn (V I/O ) +0.0 V dc to V CCBMinimum high level input voltage (V IH ) . +2.0 V dcMaximum low level input voltage (V IL ) . +0.8 V dcMaximum high level output curr

    16、ent, An (I OH ):V CCA = 4.5 V to 5.5 V . -24.0 mAMaximum high level output current, Bn (I OH ):V CCB = 2.7 V -12.0 mAV CCB = 3.0 V to 3.6 V . -24. 0 mAMaximum low level output current, An (I OL ):V CCA = 4.5 V to 5.5 V . +24.0 mAMaximum low level output current, Bn (I OL ):V CCB = 2.7 V +12.0 mAV CC

    17、B = 3.0 V to 3.6 V . +24.0 mACase operating temperature range (T C ) . -55 C to +125 CInput rise or fall times ( t/ V) 0 to 8 ns/V1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliab

    18、ility.2 / Unless otherwise not ed, all voltages are referenced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature rangeof -55 C to +125 C.4 / Maximum junction temperature shall not be exceeded except for all owable short dura

    19、tion burn-in screening conditions inaccordance with method 5004 of MIL-STD-883.5 / Unused pins (inputs and Input/Outputs) must be held high or low. They may not float.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5

    20、962-98606DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a partof this drawing to the extent specified herein.

    21、Unless otherwise specified, the issues of these documents are those listed in theissue of the Department of Defense Index of Specifications and Standards ( DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, G

    22、eneral Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Draw ings (SMDs

    23、).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a co

    24、nflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item req

    25、uirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requireme

    26、nts fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device class

    27、es Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on

    28、figure 2.3.2.4 Logic diagram . The logic diagram shall be as specified on figure 3.3.2.5 Ground bounce test circuit and waveforms . The ground bounce test circuit and waveforms shall be as specified onfigure 4.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

    29、IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98606DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 5DSCC FORM 2234APR 973.2.6 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 5.3.2.7 Radiation exposure circu

    30、it . The radiation exposure circuit shall be as specified when available.3.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and

    31、 shall apply over the fullcase operating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2

    32、herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA

    33、 designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ o

    34、r “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the r

    35、equirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an app

    36、roved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 andherein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conforma

    37、nce as required for device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of c hange of product

    38、(see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable requ

    39、ired documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be inmicrocircuit group number 37 (see MIL-PRF-38535, appendix A).Provided by IHSNot fo

    40、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98606DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 6DSCC FORM 2234APR 97Table I. Electrical performance characteristics .Test andMIL-STD-883test method 1

    41、 /Symbol Test conditions 2 /-55 C T C +125 C+4.5 V V CCA +5.5 VV CCA V CCB Group AsubgroupsLimits 3 / Unit+2.7 V V CCB +3.6 Vunless otherwise specifiedMin MaxHigh level output voltage, BnV OH1 For all inputs affectingoutput under test, I OH = -100 A4.5 V 2.7 V 1, 2, 3 2.6 V3006 4 / V I N = V IL or V

    42、 IHFor all other inputs,5.5 V 3.6 V 3.5V IN = V CC or GNDI OH = -12 mA4.5 V 2.7 V 1, 2, 3 2.24.5 V 3.0 V 2.4I OH = -24 mA 4.5 V 3.0 V 1, 2, 3 2.2High level output voltage, AnV OH2 For all inputs affectingoutput under test, I OH = -100 A4.5 V 2.7 V 1, 2, 3 4.4 V3006 4 / V IN = V IL or V IHFor all oth

    43、er inputs,5.5 V 3.6 V 5.4V IN = V CC or GND I OH = -24 mA 4.5 V 3.0 V 1, 2, 3 3.7Low level output voltage, BnV OL1 For all inputs affectingoutput under test, I OL = 100 A4.5 V 2.7 V 1, 2, 3 0.1 V3007 4 / V IN = V IL or V IHFor all other inputs,5.5 V 3.6 V 0.1V IN = V CC or GNDI OL = 12 mA4.5 V 2.7 V

    44、 1, 2, 3 0.44.5 V 3.0 V 0.3I OL = 24 mA 4.5 V 3.0 V 1, 2, 3 0.4Low level output voltage, AnV OL2 For all inputs affectingoutput under test, I OL = 100 A4.5 V 2.7 V 1, 2, 3 0.1 V3007 4 / V IN = V IL or V IHFor all other inputs,5.5 V 3.6 V 0.1V IN = V CC or GND I OL = 24 mA 4.5 V 3.0 V 1, 2, 3 0.4Inpu

    45、t current high 3010I IH For input under test, V IN = 5.5 VFor all other inputs, V IN = V CC or GND5.5 V 3.6 V 1, 2, 3 +1.0 AInput current low 3009I IL For input under test, V IN = 0.0 VFor all other inputs, V IN = V CC or GND5.5 V 3.6 V 1, 2, 3 -1.0 AThree-state outputleakage current high, An3021I O

    46、ZH5 /T/R = 0.0 VV OUT = 5.5 V5.5 V 3.6 V 1, 2, 3 +5.0 AThree-state outputleakage current high, Bn3021I OZH5 /T/R = 5.5 VV OUT = 3.6 V5.5 V 3.6 V 1, 2, 3 +5.0 ASee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICRO

    47、CIRCUIT DRAWINGSIZEA 5962-98606DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 7DSCC FORM 2234APR 97Table I. Electrical performance characteristics Continued.Test andMIL-STD-883test method 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.5 V V CCA +5.5 VV CCA V CCB Group

    48、AsubgroupsLimits 3 / Unit+2.7 V V CCB +3.6 Vunless otherwise specifiedMin MaxThree-state outputleakage current low, An3020I OZL5 /T/R = 0.0 VV OUT = 0.0 V5.5 V 3.6 V 1, 2, 3 -5.0 AThree-state outputleakage current low, Bn3020I OZL5 /T/R = 5.5 VV OUT = 0.0 V5.5 V 3.6 V 1, 2, 3 -5.0 AQuiescent supply Current, Bn to An3005I CCA For all inputs, V IN = V CCB or GNDI OUT = 0.0 AT/R = 0.0 V5.5 V 3.6 V 1, 2, 3 40.0 AQuiescent supply Current, An to Bn3005I CCB For all inputs, V IN = V CCA or GNDI OUT = 0.0 AT/R = 5.5 V5.5 V 3.6 V 1, 2, 3 10.0 AQ


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