1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add Appendix A for microcircuit die. - ro 98-05-29 R. MONNIN B Make changes to boilerplate to add class T devices. - ro 98-12-03 R. MONNIN C Make changes to AE and BPOE delta limits as specified in table IIB. - ro 02-01-08 R. MONNIN D Add device
2、type 02. - ro 02-12-19 R. MONNIN E Make corrections to Utempo, Btempo, and Gtempotests unit column as specified under Table I. Delete IIOfrom Table IIB. Add a new footnote under 1.5 and Table I. Delete latch up under 1.5 and 4.4.4.2. - ro 05-04-25 R. MONNIN F Add device type 03. Delete dose rate bur
3、nout paragraph. Make changes to paragraphs 1.2.2, 1.5, 4.4.4.1, A.1.2.2, A.1.2.4, Table I, and figure 1. Add paragraph A.1.5. - ro 12-03-15 C. SAFFLE REV SHEET REV F F F F F F F F SHEET 15 16 17 18 19 20 21 22 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 1
4、4 PMIC N/A PREPARED BY DAN WONNELL DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA ROONEY APPROVED BY MICHAEL A. FRYE MICRO
5、CIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, HIGH SPEED, 12-BIT D/A CONVERTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-02-05 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-96755 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E017-12 Provided by IHSNot for ResaleNo reproduction or networking per
6、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96755 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device cl
7、asses Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (R
8、HA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96755
9、01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA l
10、evels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit
11、 function as follows: Device type Generic number Circuit function 01 HS-565ARH Radiation hardened, dielectrically isolated, high speed, 12-bit, digital-to-analog converter, with current output 02 HS-565BRH Radiation hardened, dielectrically isolated, high speed, 12-bit, digital-to-analog converter,
12、with current output 03 HS-565BEH Radiation hardened, dielectrically isolated, high speed, 12-bit, digital-to-analog converter, with current output 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device req
13、uirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performanc
14、e as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J CDIP2-T24 24 Dual-in-line X CDFP4-F24 24 Flat pack Provided by IHS
15、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96755 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for de
16、vice classes Q, T and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ VCCto power ground . 0 V to +18 V VEEto power ground . 0 V to -18 V Voltage on DAC output on IDAC pin -3 V to +12 V Digital input (BIT 12 IN BIT 1 IN pins) to power ground -1 V to +7 V REF IN to
17、 REF GND 12 V Bipolar offset to REF GND . 12 V 10 V SPAN R to REF GND 12 V 20 V SPAN R to REF GND 24 V Maximum package power dissipation (TA= +125C): 2/ Case outline J 0.83 W Case outline X . 0.62 W Junction temperature (TJ) +175C Storage temperature range -65C to +150C Lead temperature (soldering,
18、10 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline J 17C/W Case outline X . 15C/W Thermal resistance, junction-to-ambient (JA): Case outline J 60C/W Case outline X . 80C/W 1.4 Recommended operating conditions. Positive supply voltage range (VCC) +11.4 V to +16.5 V Negative sup
19、ply voltage range (VEE) -11.4 V to -16.5 V Digital input low voltage range . 0 V to +0.8 V Digital input high voltage range . +2.0 V to +5.5 V Ambient operating temperature range (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended o
20、peration at the maximum levels may degrade performance and affect reliability. 2/ If the power exceeds package dissipation capability, provide heat sinking or derate linearity at the following rate (the derating is based on JA): case outline J use 16.67 mW/C and case outline X use 12.5 mW/C. Provide
21、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96755 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate =
22、50 300 rads(Si)/s): Device types 01 and 02 100 krads(Si) 3/ Device type 03 . 100 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rads(Si)/s): Device type 03 . 50 krads(Si) 4/ The manufacturer supplying RHA device types 01, 02, and 03 on this drawing has performed characterization testing t
23、o demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a level of 50 krads(Si). The manufacturer will perform only high dose rate lot acceptance test
24、ing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, condition A for device types 01 and 02. The manufacturer will perform high dose rate and low dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, conditions A and D for devic
25、e type 03. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation o
26、r contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE
27、 HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia,
28、PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained
29、. _ 3/ The manufacturer supplying device types 01 and 02 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted
30、 parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 4/ The manufacturer supplying device type 03 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the
31、 parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to
32、 a maximum total dose of 50 krads(Si). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96755 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1
33、Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as des
34、cribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construct
35、ion, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
36、 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Calibration diagrams. The calibration diagrams shall be as specified on figures 2, 3, and 4. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III. 3.3 Electri
37、cal performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test
38、requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages wh
39、ere marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with
40、MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re
41、quired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compli
42、ance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufactur
43、ers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or f
44、or device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to
45、this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required docum
46、entation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 56 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Resal
47、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96755 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125
48、C VCC= +15 V, VEE= -15 V Group A subgroups Device type Limits Unit VSSD= VSSA= 0 V unless otherwise specified Min Max Resolution 1,2,3 All 12 Bits Accuracy ILEError relative to full scale 1,2,3 All 0.75 LSB M,D,P,L,R 1 All 1.0 Digital input high current IIHVIN= 5.5 V 1,2,3 All +1.0 A Digital input low current IILVIN= 0 V 1,2,3 All -20 A M,D,P,L,R 1 All -40 Digital input high voltage VIH2/ 1,2,3 All 2.0 V M,D,P,L,R 1 All 2.5 Digital input low voltage VIL2/ 1,2,3 All 0.8 V M,D,P,L,R 1 All 0.5 Differential nonlinearity DLE Monotonicity guaranteed 1,2,3 All 0.50 LSB M,D,P,L,R 1 Al
