1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R133-97. - JB 96-11-19 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout
2、. - TVN 06-06-15 Thomas M. Hess C Update radiation features in sections 1.5 and SEP table IB. Change the title. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. - jak 12-06-06 Thomas M. Hess D To correct switching waveforms input/output test limits to figure
3、 4. Add test equivalent circuits and footnote 5 to figure 4. Add paragraph 2.2 for ASTM F1192 document. Delete class M requirements throughout.MAA 13-02-19 Thomas M. Hess REV SHEET REV D D D SHEET 15 16 17 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PM
4、IC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L.
5、Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-12 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96589 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E193-13 Provided b
6、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96589 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance clas
7、s levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in
8、the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96589 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device
9、 classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01
10、 54ACTS373 Radiation hardened, octal transparent latch with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification
11、 and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as sp
12、ecified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96589 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Ab
13、solute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN) 10 mA Latch-up immunity current (ILU) 150 mA Storage temperatu
14、re range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V
15、dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT) 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 1 x 1
16、06Rads (Si) Single event phenomenon (SEP): No SEU occurs at effective LET (see 4.4.4.4). 80 MeV-cm2/mg 6/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV-cm2/mg 6/ Dose rate upset (20 ns pulse) . 1 x 109Rads (Si)/s 6/ Latch-up . None 6/ Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stress
17、es above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply ove
18、r the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit (SEC). 6/ Limits are guarantee
19、d by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 S
20、IZE A 5962-96589 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of
21、these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elec
22、tronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk,
23、 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTE
24、RNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org/ or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Co
25、nshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has
26、been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affec
27、t the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and phys
28、ical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as s
29、pecified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IH
30、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96589 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be
31、 maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance chara
32、cteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are d
33、efined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “59
34、62-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The ce
35、rtification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required f
36、rom a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for
37、device classes Q and V, the requirements of MIL-PRF-38535 and herein . 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo repr
38、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96589 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C
39、unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIH All 4.5 V 1, 2, 3 2.25 V M, D, P, L, R, F, G, H 3/ All 1 2.25 All 5.5 V 1, 2, 3 2.75 M, D, P, L, R, F, G, H 3/ All 1 2.75 Low level input voltage VIL All 4.5 V 1, 2, 3 0.8 V M, D, P, L, R,
40、 F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOH For all inputs affecting output under test, VIN= VDDor VSSIOH= -8.0 mA All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 Low level output voltage VOL For all inputs affecting out
41、put under test, VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIH For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IIL For input under test, VIN
42、= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Output current (source) IOH4/ For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 -8.0 mA M, D, P, L, R, F, G, H 3/ All 1 -8.0 Output current (sink) IOL4/ For output
43、under test, VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 mA M, D, P, L, R, F, G, H 3/ All 1 8.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 Quiescent supply current delta, TTL input levels IDDQ5/ For input under test, VIN= VDD
44、- 2.1 V For all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO
45、 43218-3990 SIZE A 5962-96589 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Short circuit output current IOS6/
46、7/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Three-state output leakage current, high IOZHOC = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VDD All 5.5 V 1, 2, 3 +20.0 A M, D, P, L, R, F, G, H 3/ All 1 +20.0 Three-state output leakage current, low IOZLOC = 5.5 V For all other inputs, VIN= VDDor VS
47、SVOUT= VSS All 5.5 V 1, 2, 3 -20.0 A M, D, P, L, R, F, G, H 3/ All 1 -20.0 Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW8/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 1.9 m
48、W/ MHz M, D, P, L, R, F, G, H 3/ All 4 1.9 Functional test 9/ VIH= 0.5 VDD, VIL= 0.8 VSee 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, nD to nQ tPLH110/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 1.0 14.0 ns M, D, P, L, R, F, G, H 3/ All 9 1.0 14.0 tPHL110/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 1.0 16.0 M, D, P, L, R, F, G, H 3/ All 9 1.0 16.0 Propagation delay time, C to nQ tPLH210/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 1.
