1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrected waveform labeling error on sheet 13. Updated boilerplate. glg. 97-09-18 Raymond Monnin B Updated document to current requirements, and updated contact information and agency address. ksr 09-07-05 Charles F. Saffle REV SHET REV B B B B B
2、 B SHEET 15 16 17 18 19 20 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING
3、IS AVAILABLE FOR USE BY ALL APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOS, RADIATION HARDENED, 8K X 8 STATIC RAM, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-03-20 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95823
4、SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E360-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1
5、. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When avail
6、able, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95823 01 V Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1
7、.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels a
8、nd are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 65647RH 8K X 8 Radiation hardened CMOS/SOS SRAM 50 ns 1.2.3 Devic
9、e class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-
10、PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat pack 1.2.5
11、Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and M
12、IL-HDBK-103 (see 6.6 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum
13、 ratings. 2/ Supply voltage range . -0.5 V to +7.0 V dc Input, output, or I/O voltage . -0.3 V dc to VDD+0.3 V dc Maximum package power dissipation (PD) at TA= +125C Case X 1.11 W 3/ Case Y 0.94 W 3/ Lead temperature (soldering, 10 seconds maximum) +300C Thermal resistance, junction-to-case (JC): Ca
14、se X 8.0C/W Case Y 7.4C/W Thermal resistance, junction-to-ambient (JA): Case X 45.0C/W Case Y 53.4C/W Junction temperature (TJ) +175C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Supply voltage (VDD) +4.5 V dc to +5.5 V dc Ground voltage (GND) . 0.0 V dc Input high v
15、oltage (VIH) 0.8VDDto VDDInput Low voltage (VIL) . 0.0 V dc to 0.2VDDCase operating temperature range (TC) . -55C to +125C Input rise and fall time 40 ns max 1.5 Radiation features. Radiation features: Total dose irradiation . 300 KRads(Si) Dose rate upset (20 ns pulse) 1 x 1011Rads(Si)/sec 4/ Dose
16、rate survivability . 1 x 1012Rads(Si)/sec 4/ Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 100 MeV/(cm2/mg) 4/ Latchup None 4/ Cosmic ray upset immunity . 50 pF. For CL 50 pF, access times are derated 0.15ns/pF. Provided by IHSNot for ResaleNo reproduction or n
17、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 11 DSCC FORM 2234 APR 97 Device types All Case outlines X,Y Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 1
18、4 15 16 17 18 19 20 21 22 23 24 25 26 27 28 NC A12A7A6A5A4A3A2A1A0DQ0DQ1DQ2GND DQ3DQ4DQ5DQ6DQ7 E1A10G A11A9A8E2W VDDNC = no connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE
19、A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 12 DSCC FORM 2234 APR 97 Read modesMode E1E2 G W Outputs Low power supply X L X X High Z Disabled H H X X High Z Enabled L H H H High Z Read L H L H Data out Write L H X L Data in NOTES: 1. L = logic low vol
20、tage level; H = logic high voltage level; X can be H or L. 2. High Z is high impedance state. FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMB
21、US, OHIO 43218-3990 REVISION LEVEL B SHEET 13 DSCC FORM 2234 APR 97 Read cycle 1 (see note 1) NOTES: 1. W and E2are high, G and E1are low. 2. W is high. FIGURE 3. Timing waveforms. Read cycle 2 (see note 2) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
22、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 14 DSCC FORM 2234 APR 97 Write cycle 1: Late write FIGURE 3. Timing waveforms continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without l
23、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 15 DSCC FORM 2234 APR 97 Write cycle 2: Early write,E1controlled FIGURE 3. Timing waveforms continued. Provided by IHSNot for ResaleNo reproduction or n
24、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 16 DSCC FORM 2234 APR 97 Write cycle 3: Early write, E2controlled FIGURE 3. Timing waveforms continued. Provided by IHSNot
25、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 17 DSCC FORM 2234 APR 97 4.4.3 Group D inspection. The group D inspection end-point electrica
26、l parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q
27、and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level b
28、eing tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA= +25C 5C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accor
29、dance with MIL-STD-883 method 1019, condition A and as specified herein. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in
30、table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced la
31、tchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may affect the RHA capability of the
32、process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with method 1021 of MIL-STD-883 and herein (see 1.4). a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the RHA p
33、erformance of the devices. Test 10 devices with 0 defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Single event phenomena (SEP). SEP testin
34、g shall be required on class V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may aff
35、ect the upset or latchup characteristics. ASTM standard F1192 may be used as a guideline when performing SEP testing. The test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60). No shadow
36、ing of the ion beam due to fixturing or package related effects are allowed. b. The fluence shall be 100 errors or 106ions/cm2. c. The flux shall be between 102and 105ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ
37、by at least an order of magnitude. d. The particle range shall be 20 microns in silicon. e. The test temperature shall be +25 C and the maximum rated operating temperature 10 C. f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures.
38、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 18 DSCC FORM 2234 APR 97 TABLE IIA. Electrical test requirements. 1/ 2/ 3
39、/ 4/ 5/ 6/ 7/ Line no. Test requirements Subgroups (in accordance with MIL-STD-883, TM 5005, table I) Subgroups (in accordance with MIL-PRF-38535, table III) Device class M Device class Q Device class V 1 Interim electrical parameters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 2 Static burn-in (method 1015)
40、Not required Not required Required 3 Same as line 1 1*, 7*, 9 4 Dynamic burn-in (method 1015) Required Required Required 5 Same as line 1 1*, 7*, 9 6 Final electrical parameters (see 4.2) 1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 7 Group A test r
41、equirements (see 4.4) 1, 2, 3, 4*, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 4*, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 4*, 7, 8A, 8B, 9, 10, 11 8 Group C end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8A, 8B 1, 2, 3, 7, 8A, 8B 1, 2, 3, 7, 8A, 8B, 9, 10, 11 9 Group D end-point electrical parameters (see 4.4) 1, 7
42、, 9 1, 7, 9 1, 7, 9 10 Group E end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1/ Blank spaces indicate tests are not applicable. 2/ Any or all subgroups may be combined when using high-speed testers. 3/ Subgroups 7, 8A, and 8B functional tests shall verify the truth table. 4/ * in
43、dicates PDA applies to subgroup 1, 7, and 9. 5/ * see 4.4.1c. 6/ indicates delta limit (see table IIB) shall be required where specified, and the delta values shall be computed with reference to the previous interim electrical parameters (see line 1). 7/ See 4.5. Table IIB. Delta limits at +25C. Tes
44、t 1/ All device types IIN150 nA of specified value in Table I IOZ2 A of specified value in Table I IDDSB150 A of specified value in Table I VOL60 mV of specified value in Table I VOH150 mV of specified value in Table I 1/ The above parameter shall be recorded before and after the required burn-in an
45、d life tests to determine the delta. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95823 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 19 DSCC FORM 2234 APR 97 4.5 Delta me
46、asurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical parameters to be measured, with associated delta limits are listed in table
47、 IIB. The device manufacturer may, at his option, either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and 9. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design app
