1、SMD-59b2-95541 9999996 0071099 269 m 11 12 13 REV I S IONS LTR DESCRIPTION I DATE (YR-MO-DA) APPROVED 14 REV SHEET REV SHEET PMIC N/A 15 16 17 18 19 20 21 22 I PREPARED BY Larry T. Gauder 1 DEFENSE ELECTRONICS SUPPLY REV STATUS REV OF SHEETS SHEET 12 3 4 5 6 7 8 9 10 STANDARD MICROCIRCUIT DRAWING TH
2、IS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA JUL 94 DISTRiB1IUti STATEMENT A. Approved for public release; distribution is unlimited. CHECKED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, BTL ARBITRATION TRANSCEIVER, MONOLITHIC SILICON APPROVED
3、 BY Monica L. Poelking DRAWING APPROVAL DATE 95-01-06 SIZE CAGE CODE 5962-95541 REVISION LEVEL A 67268 SHEET 1 OF 22 5962-E065-95 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part n
4、umber documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).
5、 Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 E.
6、 The PIN shall be as shown in the fo1Iowing example: !ir2 , 95541 r f i 1 edera 1 RHA Dev i ce Device Case Lea stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) (see 1.2.3) Drawing number 1.2.1 RHA designator. Device class M RHA ma
7、rked devices shall met the MIL-1-38535 appendix A specified RHA ieves and shall be marked with the appropriate RHA designator. Oevice classes Q and V RHA marked devices shall meet the Mil-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non
8、-RHA devi ce. 1.2.2 Device typesl. The device type(s) shall identify the circuit function as follows: Generic nuiriber Circuit function ev i ce type o1 OS3885 BTL arbitrat ion transceiver F 5962-95541 STANDAIUI SIZE MICROCIRCUIT DRAWING 11 DAYTON, OHIO 45444 REVISION LEVEL SHEET DEFENSE ELECTRONICS
9、SUPPLY CENTER 2 = 1.1 V 9 o1 e 19 ABO to tpLH AB = 1.1 V 9 o1 8 18 asserted condition CN-CE = 3 V 10,ii 8 23 propagation delay - asserted condi t ion CN-E = 3 V 10.11 8 23 propagation delay ABn = 1.1 V, CMPT = CN-E = 3 V 1 tpHZ I ns !IS 19 SIZE A6-K to CNn enable time 5962-95541 ABn = 1.1 V, ! tpZH
10、I - CMPT = CN-Z = 3 V F 10.11 STANDARD MICROCIRCUIT DRAWING D-SE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 IESC FORM 193A JUL 94 1- - I I REVISION LEVEL I SHEET 8 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57b2-9554L 9997996 007LL07 165 =
11、 Test TABLE 1. Electrical performance characteristics. - continued symbo 1 Conditions Group A Device Limits Unit -55C s T 5 +125C subgroups type v c = 5 v IO% unlgss otherwise specified Min Max tpHL 2.1 v 9 o1 7 16 CN = O V 10,ll 7 19 AB-K = 3 v CMTP = CN-E = O V tPLH -:o -2.1 v 9 O1 7 16 CMTP = CN-
12、LE = O V ABRE = 3 V CN -:o * o v 10,ll 7 21 tPHL u:0 =2.1 v 9 o1 7 19 CMTP = ABRE = 3 V CN-LE = O V, CNO = 3 V CN (7:1 = O V 10,ll 7 22 tpLH AB -2.1 V 9 o1 7 ia (SMTP, ABRE = 3 V CN = O V 10.11 7 23 CN-r = O V, CNO = 3 V tpHL AB =1.1 V 9 o1 7 14 m= CN LE = AB-RE- = 3 V, ABO = 2.1-V 10,ll 7 17 I tpLH
13、 AB =1.1 V 9 o1 6 15 m- CN LE = AB-K = 3 V, ABO = 2.1-V 10,ll 6 Other AC parameters (continued) ns ns ns ns ns !IS ABO to WIN-GT propagation delay Win condition AB 2.1 V 9 o1 5 CMTP = CN-LE = O V CN = O v, AB E=3 v 10,11 5 CNn= O V, CNcn-b = 3 V t I - tpLH AB 2.1 V 9 o1 4 CN LE = O V CN = 3 V ABO to
14、 WIN-GT propagation delay Win condition I 16 ns 17 19 ns za ABO to WIN-GT propagation delay greater than condition S TANDAD SIZE MICROCIRCUIT DRAWING A DAYTON, OHIO 45444 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CEWTW i ABO to WIN-GT propagation delay greater than condit ion 5962-95541 SHEET 9 ABP
15、to PER propagation delay parity error condition ABP to PER propaga t i on de 1 ay par i ty error condi t ion ABn to AB O V - AB7 to ABP tpLH CMPT = CN-s = OV 9 o1 60 CN- = O V 10,11 65 propagation delay AB = CNP = 3 V ns ns ns ns STANDARD SIZE MICROCIRCUIT DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER
16、 DAYTON. OHIO 45444 5962-95541 REVISION LEVEL SHEET 10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-95541 m 9999996 0071109 T38 9 SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL Cas
17、e X 5962-95541 SHEET 11 bl b f i T 1 24 - b D FIGURE i. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Mi 11 imeters Inches Dimens ions Hin Max Min Max A 1.78 2.54 .O70 .loo b 0.20 0.30 .O08 .o12 bl 0.08 0.18 .O03 .O07 C 0.10 0.23 .O04
18、 . O09 n 1 16.26 .640 e 0.64 ESC .O25 BSC E 9.55 9.75 .3?6 .384 El 10.16 .400 L 6.35 8.89 ,250 .350 Q 0.79 1.14 .O31 .O45 s1 0.13 .O05 NOTES: 1. The preferred unit of measurement is millimeters. However, this item was designed using inch-pound units Of measurements. units shall rule. 2. Lead nuraber
19、 1 is identified by a tab located on the lead. 3. Lead nuntiers are shown for reference only and do not appear on package. 4. Dimensions El allow for glass meniscus. 5. Dimension Q shall be masured at the point of exit of the lead from the body. In case of problems involving conflicts between the me
20、tric and inch-pound units, the inch-pound Notes 4 P 5 FIGURE 1. Case outline.- continued STANDAIU) SIZE MCROCIRCUIT DRAWING A DAYTON, OHIO 45444 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER 5962-95541 SHEET 12 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permi
21、tted without license from IHS-,-,-SMD-5962-7554L 9999996 007LllL 696 STANDARD SIZE MICROCIRCUIT DRAWING A REPENSE ELECTRONICS SUPPLY CENTER Dev i ce type Case out 1 ine Terminal number 1 5962-95541 20 21 22 Al 1 Termi na 1 symbol PER ALL1 LI - - Icc WIN GT CNP CNO GND CN 1 CN2 CN3 “cc CN4 GND CN 5 C
22、N6 CN7 GND CMPT CN LE AB QGND NC NC I_ Devi ce type Case outline Terminal number 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Al 1 X Terminal symbol NC NC QVCC A87 GND AB7 AB6 A86 GND NC NC AB5 GND A05 A64 AB4 GND A83 GND AB3 AB2 AB2 GND A81 GND A01 ABO ABO GND ABP GND ABP
23、 NC DAYTON, OHIO 45444 I REVISION LEVEL I SHEET 13 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I TTL I I INPUT LATCH OUTPUT BUFFER 1 A I 1 W I N/LOSE b FIGURE 3. Block diagram. ARB I TRAT ON COMPARATOR - AND i t DESC FORM 19
24、3A JUL 94 PARITY CHECK BUS STATUS 1- c AND DRIVER RECEIVER SIZE STANDARD DEFENSE ELECTRONICS SUPPLY CENTX MICROCIRCUIT DBAWING A DAYTON, OHIO 45444 REVISION LEVEL 5962-95541 14 SHEET Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-2.1 v I Cn VI CNJE
25、Driver propagation delay Set-up 1.5 V 3v ov 1.5 V 3v qt“ 1.5 -I/ v ov I 1.55 V OL 0river:CN-E to AB7, tS, tH, tpH FIGURE 4. Test circuits and waveforms. STANDARI) MCROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON. OHIO 45444 SIZE A 5962-95541 REVISION LEVEL SHEET 15 DESC FORM 193A Provide
26、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95541 m 9999996 0031134 3T5 m SIZE A STANDARD MICROCIRCUIT DRAWING DEFWSE ELECTRONICS SUPPLY CEWTER DAYTON, OHIO 45444 REVISION LEVEL Driver: CMPT to A67 5962-95541 SHEET 16 T CL 50 PF L i RL SWITCH P
27、OSITION Receiver propagation delay Set-up DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95541 m b OOLL15 231 m STANDARD MICROCIRCUIT DRAWING DEFWSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I SIZE 5962-95541 A REVI
28、SION LEVEL SHEET 17 Receiver: ABn to CNn 5.0 v CL “I I SWITCH POSITION CLOSE I OPEN OPEN 1 CLOSE Receiver enable/disable Set-up FIGURE 4. Test circuits and switchinq waveforms.- continued Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-955g1
29、 m 9b 0071116 178 m 3v vO CNn VOH Receiver:AB-m toCNn v V VI AB - ALL 1 PER vo - ABO to Am, ABO to P?R fIGURE 4. Test circuits and switchinq waveforms.- continued HICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 )ESC FORM 193A Jut 94 5962-95541 1 REVISION LEVEL I SHEET 18 Pr
30、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95541 9999996 0071117 OOLi STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1.55 V AB ABP SIZE A REVISION LEVEL - WIN-GT VI vO PER AB AB 1.5 v 1.5 V ABO to WT-E,
31、 ABP to PT 2.1 v 1.55 V 1.55 V 2.1 v-1 AB ABP %L ABn to AB (n-l), A67 to ABP FIGURE 4. Test circuits and switchinq waveforms.- continued 5962-95541 SHEET 19 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4.2 Screenin . For device class M, screening
32、shall be in accordance with method 5004 of MIL-STD-883, and shall be conductd devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all devices prior to qualification and technology COnfOt=IIIanCe ins
33、pect i on. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of HIL-STD-883. (1) Test condition A.B. C or O. lhe test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon
34、 request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. 1 (2) TA = +125OC, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additio
35、nal criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. The burn-in test circuit shall be maintained under document revision level co
36、ntrol of the device manufacturers Technology Review Board (TRB) in accordance with MIL-1-38535 and shall be nade available to the acquiring or preparing activity upon request. The test circuit shail specify the inputs, outputs, biases, and parer dissipation, as applicable, in accordance with the int
37、ent specified in test method 1015. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix 6 of MIL-1-38535. I I STANDARD MICROCIRCUIT DRAWING I DB
38、FENSE ELECTRONICS SUPPLY CENTER 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall I be in aormed shall be those specified in ML-1-38535 and herein for 5962-95541 SIZE A J- I I groups A, B. C, O, and E inspections (see 4.4.1 through 4.4
39、.4). 4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with HIL-STD-883 (see 3.1 herein) and as specified herein. specified in method 5005 of MIL-STD-883 and herein for groups A, 6, C. O, and E inspections (see 4.4.1 through 4.4.4). C, O, and E insp
40、ections and as specified herein except where option 2 of MIL-I-38535 permits alternate in-line control testing. inspections to be performed for device class M shall be those , Technology conformance inspection for classes Q and V shall be in accordance with MIl-1-38535 including groups A, B, 4.4.1 G
41、roup A inspection. a. Tests shall be as specified in table II herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault
42、 graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). 4.4.2 Group C inspection. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: The group C inspection end-point electrical parameters shall be as specified in table II
43、 herein. a. Test condition A, 8, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be mde available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, a
44、s applicable, in accordance with the intent specified in test method 1005. b. TA = +125OC, minimum. c. Test duration: .l,OOO hours, except as permitted by method 1005 of HIL-STD-883. . DAYTON, OHIO 45444 REVISION LEVEL SHEET 20 I I I 1 JUL 94 Provided by IHSNot for ResaleNo reproduction or networkin
45、g permitted without license from IHS-,-,-TABLE II. Electrical test requirements. Subgroups (in accordance with MIL-STO-883, TM 5005, table I) Devi ce class H 1 Test requirements Subgroups (in accordance with MIL-I -38535, table I I I ) Oev i ce Dev ice class Q class V 1 1 :nterirn electrical pramete
46、rs (see 4.2) 1. 2, 3, 3A, 7, Sel/ 9, 10, 11 . i na 1 e 1 ectr i ca 1 parameters (see 4.2) ;roup A test requirements (see 4.4) 1, 2, 3, 3A, L/ 1,2,3, 3A. 2/ 7, 8, 9, 10, 11 7,8,9,10,11 ;roup C end-point electrical parameters (see 4.4) 1, 2, 3, 3A, 7, 8. 9, 10, 11 ;roup D end-poi nt electr i ca 1 para
47、meters (see 4.4) 1, 2, 3, 3A, 7, 1,2,3,3A,7. 8, 9, 10, 11 8, 9, 10, 11 ;roup E end-point electrical parameters (see 4.4) STANDARC MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER I SIZE 5962-95541 A Y I 8 I 4 1, 2, 3 I 1. 2, 3 I 1, 2, 3 1 - i/ PDA applies to subgroup 1. - 21 PDA applies to sub
48、groups 1 and 7. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temerature. or aooroved alternatives shall be as specified in the device manufacturers OM Dlan in accordance with MIL-1-385351 manufacturers TRB. in accordance with MIL-1-38535, and shall be made available to the acquiring or preparing activity upon request. accordance with the intent specified in test method 1005. herein. hardness assured (see 3.5 herein). RHA levels for device classes Q and V shall be M, D. L R, F, G, and H and for device c
