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    DLA SMD-5962-93264 REV C-2009 MICROCIRCUIT LINEAR BATTERY MANAGER MONOLITHIC SILICON.pdf

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    DLA SMD-5962-93264 REV C-2009 MICROCIRCUIT LINEAR BATTERY MANAGER MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R037-95. 94-11-29 M. A. FRYE B Drawing updated to reflect current requirements. - ro 02-01-28 R. MONNIN C Five year review update. -rrp 09-07-21 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C

    2、 C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A

    3、. FRYE MICROCIRCUIT, LINEAR, BATTERY MANAGER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-11-19 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-93264 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E141-08 Provided by IHSNot for ResaleNo reproduction or netwo

    4、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliab

    5、ility (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN

    6、 is as shown in the following example: 5962 - 93264 01 M E X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA mark

    7、ed devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device

    8、 type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX1259 Battery manager 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirem

    9、ents documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-S

    10、TD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for d

    11、evice class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Vo

    12、ltage to any pin relative to GND -0.3 V to +7.0 V Power dissipation (PD): Case E . 800 mW, derate at 10.0 mW/C above 70C Case 2 . 727 mW, derate at 9.09 mW/C above 70C Storage temperature range -55C to +125C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . S

    13、ee MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case E . 100C/W Case 2 . 110C/W 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V to +5.5 V Battery-fail trip point (VBATTP) . 2.0 V Input capacitance (CIN) . 10 pF Output capacitance (COUT) . 10 pF Ambient operating

    14、 temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are thos

    15、e cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Ou

    16、tlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue,

    17、 Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

    18、 exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

    19、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 an

    20、d as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A fo

    21、r non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1

    22、 Case outlines. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation

    23、parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall

    24、 be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasi

    25、ble due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in ac

    26、cordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of com

    27、pliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be list

    28、ed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535

    29、 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of micr

    30、ocircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for devic

    31、e class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for devi

    32、ce class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER

    33、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min Max DC operating conditions section 2/ Primary power su

    34、pply VCC3/ 1,2,3 01 5.5 V Input high voltage VIH3/ 1,2,3 01 2.4 +VCC+0.3 V Input low voltage VIL3/ 1,2,3 01 -0.3 0.8 V Battery voltage VBATT4/ 5/ 1,2,3 01 2.5 3.7 V Battery output BATOUT3/ 1,2,3 01 VBATT0.1 V DC electrical characteristics section 1/ Leakage current ILO1,2,3 01 -1.0 1.0 A Output high

    35、 current at PF and BF IOHVOH= 2.4 V 6/ 1,2,3 01 -1.0 mA Output low current at PF and BF IOLVOL= 0.4 V 1,2,3 01 4.0 mA Input supply current ICC7/ 1,2,3 01 3.33 mA VCCOoutput current ICCOBoth VCCOpins = VCCI 0.2 1,2,3 01 250 mA Power-fall trip point VTP4/ 8/ 1,2,3 01 9/ 9/ V DC electrical characterist

    36、ics section 10/ VCCOoutput current ICCOBoth VCCOpins = 11/ VCCI 0.2 1,2,3 01 15 mA Battery leakage IBATTVCCI VBATT12/ 1 01 100 A 2,3 10 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

    37、A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min Max DC elec

    38、trical characteristics section continued. 10/ Output current (at BAT pin) IOUT1,2,3 01 100 A AC electrical characteristics section 13/ VCCIfall time tF9,10,11 01 300 s VCCIrise time tR9,10,11 01 1 s Power down to PF low tPF9,10,11 01 0 s PF high after power up tREC9,10,11 01 100 s RST pulse width RS

    39、TPW9,10,11 01 50 ns 1/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 2/ Unless otherwise specified, VCC= +4.5 V to +5.5 V. 3/ A

    40、ll voltages referenced to ground. 4/ Trip-point voltage for power-fail detect: VTP= 1.26 x VBATT. For 5% operation: VBATT= 3.7 V maximum. 5/ VBATTis the point at which BF is driven low. 6/ CL= 50 pF. 7/ Measured with BF , PF , and both VCCOpins open. 8/ Power-fail trip point (VTP) is the point at wh

    41、ich PF is driven low. 9/ Minimum limit = 1.26 x VBATT- 250 mV. Maximum limit = 1.26 x VBATT+ 250 mV. 10/ VCCI VBATT. 11/ Power supply current may be limited by battery capacity. 12/ Battery leakage is the internal energy consumed by the device. 13/ VCC= +4.0 V to +5.5 V. Provided by IHSNot for Resal

    42、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines E 2 Terminal number Terminal symbol 1 NC VCCI2 VB

    43、ATTVBATT3 BF NC 4 NC BF 5 BAT NC 6 RST NC 7 GND BAT 8 GND RST 9 NC NC 10 NC GND 11 PF GND 12 VCCOPF 13 VCCONC 14 NC NC 15 VCCINC 16 VCCIVCCO17 - VCCO18 - NC 19 - NC 20 - VCCINC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted withou

    44、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 Terminal symbol Description NC No connection. VBATTBackup battery input. BF Battery-fail output. BF is high for VCCIat or abo

    45、ve V and the backup battery greater than 2 V. If the backup battery is below 2 V or VCCIfalls below VTP, BF will be driven low. BAT Battery output. During normal operation, the BAT output supplies up to 1 mA of continuous battery current. In shipping mode, the BAT output is high impedance. RST Batte

    46、ry-disconnect input. The RST input is used to prevent battery discharge during shipping. Pulsing the RST input, disconnects the backup battery from the VCCOand BAT outputs. GND Ground. PF Power-fail output. PF is high for VCCIgreater than 1.26 x VBATT(VTP), including a valid VCCIvoltage. VCCOCMOS RA

    47、M is powered from VCCO. The battery switchover circuit compares VCCIto the VBATTinput, and connects VCCOto which ever is higher. VCCI+5 V input. FIGURE 1. Terminal connections continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC

    48、IRCUIT DRAWING SIZE A 5962-93264 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 NOTE: The resistors shown have no fixed number, but have a 30 % variation which is dependant on the process. FIGURE 2. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93264 DEF


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