1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R233-92. 92-08-18 M. A. FRYE B Add case outline P. Change to section 1.3. Technical and editorial changes throughout. 94-08-30 M. A. FRYE C Drawing updated to reflect current requirements. - ro 00-08-10 R. MONN
2、IN D Drawing updated to reflect current requirements. - ro 03-03-13 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY JOSEPH A. KERBY DEFENSE SUPPLY CENTER COLUMBUS STAN
3、DARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED BUFFER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL D
4、ATE 91-09-05 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-90812 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E239-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
5、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space app
6、lication (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962
7、- 90812 01 M G X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified
8、RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the ci
9、rcuit function as follows: Device type Generic number Circuit function 01 LM6121 High speed buffer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certificat
10、ion to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Desc
11、riptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking
12、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) (+VSto VS) . 36 V dc Input to output voltage 7 V dc 2/
13、Input voltage (VIN) VSOutput to short-circuit to GND Continuous 3/ Power dissipation (PD) . 750 mW 4/ Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) . +260C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC): Case outline G 17C/W Case outlin
14、e P . 19C/W Thermal resistance, junction-to-ambient (JA): Case outline G 150C/W Case outline P . 119C/W 1.4 Recommended operating conditions. Supply voltage (VS) 15 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbo
15、oks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement th
16、ereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
17、 _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ During current limit or thermal limit, the input current will increase if the input to output differential voltage ex
18、ceeds 8 V. For input to output differential voltages in excess of 8 V, the current should be limited to 20 mA. 3/ This buffer device contains current limit and thermal shutdown to protect against fault conditions. 4/ For operation at elevated temperatures, derate based on thermal resistance of JAand
19、 TJmaximum, with TJ= TA+ JAx PD. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTM
20、ENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade
21、lphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o
22、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the
23、form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical d
24、imensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specifi
25、ed on figure 1. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperatur
26、e range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may als
27、o be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for
28、device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The complia
29、nce mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein)
30、. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall
31、 affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V
32、in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired
33、to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVE
34、L D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply current ISRL= 1 01 8 18 mA 2,3 8 20 VS= 2.5 V, RL= 1 4 16 2,3 4 18 Output offset voltag
35、e VOORL= 1 k 1 01 -30 +30 mV 2,3 -50 +50 Power supply rejection ratio PSRR VS= 5 V to 15 V 1 01 60 130 dB 2,3 55 130 Input bias current IIBRS= 10 k, RL= 1 k 1 01 -4 +4 A 2,3 -7 +7 Positive voltage gain +AVVIN= 1 V, VS= 2.5 V, RL= 50 1 01 0.78 1 V/V VIN= 0.75 V, VS= 2.5 V, RL= 50 2,3 0.75 1 VIN= 10 V
36、, RL= 1 k 1 0.98 1 2,3 0.97 1 VIN= 10 V, RL= 50 1 0.86 1 2,3 0.8 1 Negative voltage gain -AVVIN= -1 V, VS= 2.5 V, RL= 50 1 01 0.78 1 V/V VIN= -0.75 V, VS= 2.5 V, RL= 50 2,3 0.75 1 VIN= -10 V, RL= 1 k 1 0.98 1 2,3 0.97 1 VIN= -10 V, RL= 50 1 0.86 1 2,3 0.8 1 Provided by IHSNot for ResaleNo reproducti
37、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +1
38、25C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive voltage swing +VOPVIN= 14 V, RL= 1 k 1 01 13.3 14 V 2,3 13 14 VIN= 14 V, RL= 100 1 11.5 14 2,3 10 14 VIN= 14 V, RL= 50 1 11 14 2,3 9 14 VIN= 1 V, RL= 50 , 1 0.8 1.5 VS= 2.5 V 2,3 0.55 1.5 Negative volt
39、age swing -VOPVIN= -14 V, RL= 1 k 1 01 -14 -13.3 V 2,3 -14 -13 VIN= -14 V, RL= 100 1 -14 -11.5 2,3 -14 -10 VIN= -14 V, RL= 50 1 -14 -11 2,3 -14 -9 VIN= -1 V, RL= 50 , 1 -1.5 -0.8 VS= 2.5 V 2,3 -1.5 -0.55 Output resistance ROVIN= 2 V, IOUT= 10 mA 1 01 0 5 2,3 0 10 VIN= -2 V, IOUT= -10 mA 1 0 5 2,3 0
40、10 -3 dB bandwidth BW VIN= 100 mVPP, RL= 50 , CL 10 pF 4,5,6 01 30 MHz Positive slew rate +SR VIN= 11 V, RL= 50 , 4 01 550 V/s VTH= -5 V to +5 V 5,6 250 Negative slew rate -SR VIN= 11 V, RL= 50 , 4 01 550 V/s VTH= +5 V to 5 V 5,6 250 Provided by IHSNot for ResaleNo reproduction or networking permitt
41、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 Case outlines G P Device type 01 Terminal number Terminal symbol 1 NC -VS2 +VSVIN3 NC NC 4 VOUT-VS5 NC -VS6 -VS+VS7
42、NC VOUT8 VIN-VSNC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90812 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 8 DSCC F
43、ORM 2234 APR 97 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the
44、reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection p
45、rocedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance
46、with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of
47、 MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision l
48、evel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The
