欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-89763 REV B-2004 MICROCIRCUIT LINEAR DUAL SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 单刀双掷模拟开关 双重线性微型电路》.pdf

    • 资源ID:699615       资源大小:539.81KB        全文页数:12页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-89763 REV B-2004 MICROCIRCUIT LINEAR DUAL SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 单刀双掷模拟开关 双重线性微型电路》.pdf

    1、LTR A B THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. DESCRIPTION DATE (YR-MO-DA) APPROVED Editorial changes throughout. Change to one part-one part number format. Add appendix. Change drawing to current requirements. Editorial changes throughout. - drw 92-1 1-04 M. A. Frye Raymond Mon

    2、nin 04-09-24 -Ht SHEET PREPARED BY Joseph A. Kerby CHECKED BY Charies E. Besore APPROVEDBY Michael A. Frye DRAWING APPROVAL DATE 89-1 0-06 REVISION LEVEL B REV STATUS OF SHEETS DEFENSE SUPPLY CENTER COLUMBUS http:/www.dccc.dla.mil COLUMBUS, OHIO 43218-3990 MICROCIRCUIT, LINEAR, DUAL, SPDT ANALOG SWI

    3、TCH, MONOLITHIC SILICON SIZE CAGE CODE A 67268 5962-89763 MIC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA ISCC FORM 2233 APR 97 5962-E433-04 Provided by IHSNot for ResaleNo reproduction or networking permit

    4、ted without license from IHS-,-,-1. SCOPE STANDARD DEFENSE SUPPLY CENTER COLUMBUS MICROCIRCUIT DRAWING COLUMBUS, OHIO 43218-3990 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M and space application (device class V). A choic

    5、e of case outlines and lead finishes are available and are reflected in the Pari or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: SIZE A 5962-89763 REVISION LEVEL SHEET 6

    6、3 59r , 89763 7 7 4 Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desianator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specifi

    7、ed RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device for case outline 2, 10 mW/“C. - 3/ Cross

    8、talk performance is improved with case outline 2. DSCC FORM 2234 APR 97 - Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with M

    9、IL-PRF-38535 and as specified herein or as modified in the device manufacturets Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535

    10、, appendix A for non-JAN class level B devices and as specified herein. STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 8-3990 DEFENSE SUPPLY CENTER COLUMBUS 3.2 Desian, construction. and Dhvsical dimensions. The design, construction, and physical dimensions shall be as specified in 3.2.1 Case out

    11、lines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical Derformance characteristics and Dostirradiation Darameter limits. Unless otherwise specified herein, the MIL-PRF-38535 and herein

    12、for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. electrical performance Characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The elec

    13、trical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the enti

    14、re SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for

    15、 device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appe

    16、ndix A. 3.6 Certificate of cornpliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a m

    17、anufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, th

    18、e requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be

    19、 provided with each lot of microcircuits delivered to this drawing. herein) involving devices acquired to this drawing is required for any change that affects this drawing. option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made availab

    20、le onshore at the option of the reviewer. 3.8 Notification of chanqe for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the 3.10 Microci

    21、rcuit wouD assianment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A). SIZE 5962-89763 A REVISION LEVEL SHEET B 4 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted wit

    22、hout license from IHS-,-,-TABLE 1. Electrical performance characteristics. Conditions I/ -55C S TA S +I 25C UnleSS otherwise specified Symbol GroupA Device Limits Unit subgroups type Min I Max IIL 1,2 1,2 VIN under test = 0.8 V, all others = 24 V VIN under test = 2.4 V, all others = 0.8 V llH All I1

    23、 .o PA All I1.0 VA bN FF 10, Il 275 V+=+13.5V, V-=-13.5V, 1 1 I All I I 35 1 Cl STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 8-3990 DEFENSE SUPPLY CENTER COLUMBUS - I I SIZE 5962-89763 A REVISION LEVEL SHEET B 5 I 233 I I I 45 I Is = -10 rnA, VD = 110 V V+= +16.5V,V-=-16.5V, 1 1 I All I 3 I Cl

    24、V+= +16.5V, V-=-16.5V, I 1 I V+ = 16.5 V, V- = -1 6.5 V, VD = +I 5.5 V, Vs = -1 5.5 V All 10.25 i0.25 nA V+ = +16.5V, V- = -16.5 V, I 1 I All I I 10.25 I nA I I V+ = 16.5 V, V- = -1 6.5 V, VD = +I 5.5 V, Vs = -1 5.5 V V+ = 16.5V, V-= -16.5V, I 1 I All 1 I 10.4 I nA I lo I I I 250 I l-k-l I 11 I I I

    25、175 I OSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Conditions Il -55C 2 TA 2 +125“C Group A Device Limits Symbol unless otherwise specified subgmups type Test Min Max to RL = 300Q CL = 35 PF 9 All 10 150 Break-before-ma ke ti

    26、me delay Positive supply current I+ V+ = 16.5 V, V- = -16.5 V, 1 All +1.0 23 +5.0 VIN = O V or 5.0 V Negative supply current I- V+ = 16.5 V, V- = -16.5 V, 1 All -1 .o 2, 3 -5.0 VIN = O V or 5.0 V Low supply current IL V+ = 16.5 V, V- = -16.5 V, 1 All +1.0 2,3 +5.0 VIN = O V or 5.0 V Ground current I

    27、GND V+ = 16.5 V, V- = -16.5 V, 1 All -1 .o 2, 3 -5.0 VIN = O V or 5.0 V Unit ns pA PA pA PA - DSCC FORM 2234 APR 97 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE 5962-89763 A REVISION LEVEL SHEET B 6 Provided by IHSNot for ResaleNo reproduction or networ

    28、king permitted without license from IHS-,-,-1 Devicetype 1 o1 I FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 8-3990 1 5962-89763 I B I SHEET 7 I REVISION LEVEL DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or ne

    29、tworking permitted without license from IHS-,-,-4. VERIFICATION 4.1 Samplinq and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM pl

    30、an shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screeninq. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on

    31、all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test

    32、, method 1015 of MIL-STD-883. (I) Test condition A or C. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and pow

    33、er dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table II herein. b. 4.2.2 Additional critena for device classes Q and V. a. The burn-in test duration, test condition

    34、 and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with

    35、MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1 O1 5 of MIL-STD-883. b. c. Interim and final electrical

    36、 test parameters shall be as specified in table II herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and

    37、V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, 6, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance w

    38、ith MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method

    39、 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 8-3990 IA I 1 5962-89763 I SHEET 8 1 REVISION LEVEL B DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproductio

    40、n or networking permitted without license from IHS-,-,-4.4.1 Group A inspection. Tests shall be as specified in table II herein. TABLE II. Electrical test requirements. method 5005, table I) Device class M 1 Interim electrical parameters (see 4.2) I I Subgroups I Subgroups Device Device class Q clas

    41、s V 1 I (in accordance with (in accordance with Test requirements I 1 MIL-STD-883. I MIL-PRF-38535. table 111) 11 1,2,3,9 Final electrical - parameters (see 4.2) - 11 1, 2, 3,9 11 1, 2, 3, 9 Group A test Group C end-point electrical Group D end-point electrical Group E end-point electrical requireme

    42、nts (see 4.4) parameters (see 4.4) parameters (see 4.4) parameters (see 4.4) 21 1,2, 3,9, - 2! 1,2, 3, 9, 10,ll 10,ll - 21 1, 2, 3, 9, 10, Il 1 1 1 1 1 I _ _- -_ - 11 PDA applies to subgroup 1. - 21 Subgroups 10 and 11 if not tested shall be guaranteed to the limits specified in table I. STANDARD MI

    43、CROCIRCUIT DRAWING COLUMBUS, OHIO 43218-3990 DEFENSE SUPPLY CENTER COLUMBUS 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL

    44、-STD-883: a. Test condition A or C. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as ap

    45、plicable, in accordance with the intent specified in method 1005 of MIL- STD-883. SIZE 5962-89763 A REVISION LEVEL SHEET B 9 b. TA = +125“C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted

    46、 without license from IHS-,-,-4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, Or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall

    47、be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in a

    48、ccordance with the intent specified in method 1005 of MIL-STD, 883. STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 43218-3990 DEFENSE SUPPLY CENTER COLUMBUS 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table Il herein. 4.4.4 Group E inspecti

    49、on. Group E inspection is required only for paris intended to be marked as radiation hardness assured (see 3.5 herein). SIZE 5962-89763 A REVISION LEVEL SHEET B IO a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the


    注意事项

    本文(DLA SMD-5962-89763 REV B-2004 MICROCIRCUIT LINEAR DUAL SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 单刀双掷模拟开关 双重线性微型电路》.pdf)为本站会员(bonesoil321)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开