欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-89543 REV C-2012 MICROCIRCUIT LINEAR JFET-INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

    • 资源ID:699466       资源大小:141.27KB        全文页数:14页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-89543 REV C-2012 MICROCIRCUIT LINEAR JFET-INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN C Update drawing as part of the 5 year review. - jt 12-

    2、10-01 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY

    3、 ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-10-25 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-89543 SHEET 1 OF 12 DSC

    4、C FORM 2233 APR 97 5962-E483-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr

    5、awing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiatio

    6、n Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89543 01 G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Dr

    7、awing number For device class V: 5962 R 89543 04 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked dev

    8、ices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types

    9、. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 OP-16A JFET-input, operational amplifier 02 OP-16B JFET-input, operational amplifier 03 OP-16C JFET-input, operational amplifier 04 OP-16A JFET-input, operational amplifier with radiation hard

    10、ened requirements 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be includ

    11、ed in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL

    12、-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as de

    13、signated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M

    14、. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VS): Devices 01, 02, and 04: Positive supply voltage (V+) +22 V dc Negative supply voltage (V-) . -22 V dc Device 03: Positive supply voltage (V+) +18 V dc Negative supply voltage (V-) . -18 V dc Differential input voltage: Devices 01, 02, and

    15、 04 . 40 V dc Device 03 . 30 V dc Input voltage: Devices 01, 02, and 04 . 20 V dc Device 03 . 16 V dc Maximum power dissipation (PD) . 500 mW 2/ Output short circuit duration . Indefinite Storage temperature range -65C to +150C Lead temperature (soldering, 60 seconds) +300C Junction temperature (TJ)

    16、 +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case G . 150C/W Case P 119C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 15 V Ambient operating temperature (TA) -55C to +125C 1.5 Radiation features. Maximum total dose a

    17、vailable (dose rate = 50 300 rads(Si)/s) 100 krads 3/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate linearly 6.7 mW/C above TA= +75C for P package; Derate line

    18、arly 7.1 mW/C above TA= +80C for G package. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition

    19、 A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, s

    20、tandards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - In

    21、tegrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings.

    22、MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict bet

    23、ween the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requiremen

    24、ts for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements f

    25、or device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes

    26、 Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circu

    27、it shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient

    28、operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manu

    29、facturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for devic

    30、e classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance m

    31、ark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 D

    32、SCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VOSVCM= 0 V 1 01,04 0.5 mV 2,3 0.9 M,D,P,L,R 1 04 2.0 1 02 1.0 2,3 2.0 1 03 3.0 2,3 4.

    33、5 Input offset voltage 4/ temperature coefficient TCVOS-55C and +125C 2,3 04 5 V/C Input offset voltage 4/ adjust VIOADJ+ 1,2,3 04 0.5 mV VIOADJ- -0.5 Input offset current IOSVS= 20 V, VCM= 0 V 5/ 1,3 01,04 10.0 pA 2 4.0 nA M,D,P,L,R 1 04 0.3 nA 1,3 02 20.0 pA 2 6.0 nA 1,3 03 50.0 pA 2 9.0 nA Input

    34、bias current IIBVS= 20 V, VCM= 0 V 5/ 1,3 01,04 50.0 pA 2 5.0 nA M,D,P,L,R 1 04 3.0 nA 1,3 02 100.0 pA 2 7.5 nA 1,3 03 200.0 pA 2 10.0 nA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

    35、E A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Common-m

    36、ode 4/ rejection ratio CMRR VCM= IVR = 10.5 V 1 01,02, 04 86 dB VCM= IVR = 10.4 V 2,3 85 VCM= IVR = 10.3 V 1 03 82 VCM= IVR = 10.25 V 2,3 80 Output voltage swing 4/ VORL 2 k 4 All 11.0 V RL 10 k 5,6 12.0 Large-signal voltage gain AVOVO= 10 V, RL 2 k 4 01,04 100.0 V/mV 5,6 35.0 M,D,P,L,R 4 04 50.0 4

    37、02 75.0 5,6 30.0 4 03 50.0 5,6 25.0 Supply current ISVO= 0 V 1 01,02, 04 7.0 mA 2,3 11.0 M,D,P,L,R 1 04 7.0 1 03 8.0 2,3 12.0 Power supply rejection ratio PSRR VS= 10 V to 18 V 1 01,02 86 dB 2,3 85 VS= 10 V to 15 V 1 03 82 2,3 80 See footnotes at end of table. Provided by IHSNot for ResaleNo reprodu

    38、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA

    39、 +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Power supply rejection 4/ ratio PSRR+ V+ = +10 V to +18 V, 1 04 86 dB V- = -15 V 2,3 85 PSRR- V- = -10 V to -18 V, 1 86 V+ = +15 V 2,3 85 Output short circuit 4/ current ISC+ 1 04 -42 -2 mA ISC- 2 42 Slew rate 4/ SR

    40、AVCL = +1 V 7 01,04 18.0 V/s 8a 10.0 7 02 12.0 8a 7.0 7 03 9.0 8a 5.0 Gain bandwidth product 4/ GBW TA= +25C, fO= 100 kHz 7 01,04 5.5 MHz 02 4.0 03 3.0 Power dissipation 4/ PDVO= 0 V, TA= +25C 1 01,02, 04 210 mW 03 240 Settling time tS6/ 9,10 All 4 s 1/ Unless otherwise specified VS= 15 V, RS= 50 .

    41、2/ Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation however this device is only tested at the R level. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA=

    42、 +25C. 3/ These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019. 4/ This parameter not tested post irradiation. 5

    43、/ Subgroup 3 is guaranteed if not tested. 6/ Subgroup 10 is guaranteed if not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHE

    44、ET 8 DSCC FORM 2234 APR 97 Device types 01, 02, 03, 04 Case outlines G and P Terminal number Terminal symbol 1 BAL 2 -IN 3 +IN 4 V- 5 BAL 6 OUT 7 V+ 8 NC FIGURE 1. Terminal connections. FIGURE 2. Radiation exposure circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without

    45、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89543 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufa

    46、cturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to

    47、 DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7

    48、 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein


    注意事项

    本文(DLA SMD-5962-89543 REV C-2012 MICROCIRCUIT LINEAR JFET-INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf)为本站会员(outsidejudge265)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开