欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-88703 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

    • 资源ID:699339       资源大小:102.85KB        全文页数:17页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-88703 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device class V criteria. Editorial changes throughout. -gap 99-12-22 Raymond Monnin B Add case outline X. Add delta limits, table III. Update boilerplate. - CFS 00-09-19 Monica L. Poelking C Update the boilerplate parag

    2、raph to current requirements of MIL-PRF-38535 and Editorial changes throughout. - MAA 09-01-22 Charles F. Saffle REV SHEET REV C C SHEET 15 16 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Nicklaus STANDARD MICROCIRCUIT DRAW

    3、ING CHECKED BY D. A. DiCenzo DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-08-18 MICROCIRCUIT, DIGITAL, ADVANCED CMOS,

    4、 QUAD 2-INPUT MULTIPLEXER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-88703 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E132-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

    5、 DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

    6、 V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q:

    7、 5962 - 88703 01 E A Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 - 88703 01 V X X Federal RHA Device Device Case Lead stock class designator type class outline finish de

    8、signator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet th

    9、e MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC257 Quad 2-input multiplex

    10、er with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not

    11、 be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualificat

    12、ion to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The ca

    13、se outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lea

    14、d finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT). -0.5

    15、 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current (per pin) 50 mA DC VCCor GND current (per output pin) 50 mA Maximum power dissipation (PD). 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +245C Thermal resistance, junct

    16、ion-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCCase operating temperature range (TC) -55C to +

    17、125C Input rise or fall times (tr, tf): VCC= 3.6 V to 5.5 V. 0 to 8 ns/V _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are refe

    18、renced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method

    19、5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. P

    20、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specificatio

    21、n, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535

    22、- Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawin

    23、gs. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following

    24、document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Ad

    25、vanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) (Non-Government standards and other publications are normally available from the organizations that prepare

    26、 or distribute the documents. These documents may also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in th

    27、is document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O

    28、HIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan.

    29、The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical

    30、 dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal conn

    31、ections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit sh

    32、all be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operatin

    33、g temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers

    34、 PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes

    35、 Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for d

    36、evice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device c

    37、lass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that t

    38、he manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-385

    39、35 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawin

    40、g is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made

    41、 available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted witho

    42、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 Table I. Electrical performance characteristics. Limits 3/ Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55

    43、C TC +125C +3.0 V VCC +5.5 V unless otherwise specified Device class VCCGroup A subgroups Min Max UnitPositive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA V Open 1 -0.4 -1.5 V All 3.0 V 1,

    44、 2, 3 2.9 All 4.5 V 1, 2, 3 4.4 VIN= VIHminimum or VIL maximum IOH= -50 A All 5.5 V 1, 2, 3 5.4 1 2.56 VIN = VIH minimum or VIL maximum IOH= -12 mA All 3.0 V 2, 3 2.40 1 3.86 All 4.5 V 2, 3 3.70 1 4.86 VIN= VIHminimum or VILmaximum IOH= -24 mA All 5.5 V 2, 3 4.70 High level output voltage 3006 VOH 4

    45、/ VIN= VIHminimum or VILmaximum IOH= -50 mA All 5.5 V 1, 2, 3 3.85 V All 3.0 V 1, 2, 3 0.1 All 4.5 V 1, 2, 3 0.1 VIN= VIHminimum or VILmaximum IOL= +50 A All 5.5 V 1, 2, 3 0.1 1 0.36 VIN= VIHminimum or VILmaximum IOL= +12 mA All 3.0 V 2, 3 0.50 1 0.36 All 4.5 V 2, 3 0.50 1 0.36 VIN= VIHminimum or VI

    46、Lmaximum IOL= +24 mA All 5.5 V 2, 3 0.50 V Low level output voltage 3007 VOL 4/ VIN= VIHminimum or VILmaximum IOL= +50 mA All 5.5 V 1, 2, 3 1.65 All 3.0 V 1, 2, 3 2.1 All 4.5 V 1, 2, 3 3.15 High level input voltage VIH5/ All 5.5 V 1, 2, 3 3.85 V See footnotes at end of table. Provided by IHSNot for

    47、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Table I. Electrical performance characteristics - Continued. Limits 3/ Te

    48、st and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +3.0 V VCC +5.5 V unless otherwise specified Device class VCCGroup A subgroups Min Max Unit All 3.0 V 1, 2, 3 0.9 All 4.5 V 1, 2, 3 1.35 Low level input voltage VIL5/ All 5.5 V 1, 2, 3 1.65 V 1 -0.1 Input leakage current low 3009 IILVIN= 0.0 V All 5.5 V 2, 3 -1.0 A 1 0.1 Input leakage current high 3010 IIHVIN= 5.5 V All 5.5 V 2, 3 1.0 A 1 4 Quiescent supply current, output high 3005 ICCHVIN= VCCor GND All 5.5 V 2,


    注意事项

    本文(DLA SMD-5962-88703 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf)为本站会员(visitstep340)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开