欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-88644 REV F-2008 MICROCIRCUIT DIGITAL DRIVER-RECEIVER MONOLITHIC SILICON.pdf

    • 资源ID:699300       资源大小:196.89KB        全文页数:26页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-88644 REV F-2008 MICROCIRCUIT DIGITAL DRIVER-RECEIVER MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R119-93. 93-04-12 M. L. Poelking B Changes in accordance with NOR 5962-R122-94. 94-03-03 M. L. Poelking C Add device class level V. Update boilerplate. 97-06-06 M. L. Poelking D Changes in accordance with NOR 5

    2、962-R161-98. 98-09-10 M. L. Poelking E Update boilerplate to MIL-PRF-38535 requirements. - CFS 03-10-07 Thomas M. Hess F Update boilerplate to current MIL-PRF-38535 requirements to include radiation hardness assurance (RHA) requirements. - CFS 08-10-01 Thomas M. Hess REV SHET REV F F F F F F F F F F

    3、 SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Christopher A. Rauch DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles Reusing COLUMBUS, OHIO 43218-3990 http:/www.dscc.

    4、dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY William K. Heckman MICROCIRCUIT, DIGITAL, DRIVER-RECEIVER, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-12-05 MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-88644 SHEET 1 OF 24 DS

    5、CC FORM 2233 APR 97 5962-E352-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scop

    6、e. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice o

    7、f Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 88644 01 U X Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2

    8、.5) / / Drawing number For device class V: 5962 - 88644 01 V U X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA

    9、marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 De

    10、vice type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function VCC VEE Idle 01 UT63M105 Single transceiver +5 to +15 V -15 V Low 02 UT63M107 Single transceiver +5 to +12 V -12 V Low 03 UT63M115 Single transceiver +5 to +15 V -15 V High 04 UT63M

    11、117 Single transceiver +5 to +12 V -12 V High 05 UT63M125 Multichip dual transceiver +5 to +15 V -15 V Low 06 UT63M127 Multichip dual transceiver +5 to +12 V -12 V Low 07 UT63M135 Multichip dual transceiver +5 to +15 V -15 V High 08 UT63M137 Multichip dual transceiver +5 to +12 V -12 V High Provided

    12、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. The device class designator

    13、 is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requ

    14、irements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in M

    15、IL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style U See figure 1 24 Dual-in-line X See figure 1 36 Dual-in-line Y See figure 1 36 Flat pack Z See figure 1 36 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

    16、 V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ VDD+7.0 V VEE -22 V VCC +22 V Input voltage range (receiver) 42 VPPline to line Logic input voltage . -0.3 V to +5.5 V Output current (transmitter) 190 mA Power dissipation (PD) (per channel) 4 W Maximum thermal res

    17、istance junction-to-heatsink (JS) . 6C/W 2/ Storage temperature range -65C to +150C Maximum junction temperature (TJ) . +150C 1.4 Recommended operating conditions. Case operating temperature range (TC) . -55C to +125C Operating temperature junction -55C to +150C Supply voltage (VDD) +4.5 V dc to +5.

    18、5 V dc Supply voltage (VEE): Device types 01, 03, 05, and 07 . -14.25 V dc to -15.75 V dc Device types 02, 04, 06, and 08 . -11.4 V dc to -12.6 V dc Supply voltage (VCC): Device types 01, 03, 05, and 07 . +4.75 V dc to +15.75 V dc Device types 02, 04, 06, and 08 . +4.75 V dc to +12.6 V dc Input high

    19、 voltage (VIH). +2.0 V dc minimum Input low voltage (VIL). +0.8 V dc maximum _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All packages should mount to or contact a

    20、 heat removal rail located in the printed circuit board. To insure proper heat transfer between the package and the heat removal rail, use a thermally conductive material between the package and the heat removal rail. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

    21、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 krad/s): Device types 01 and 05 100k Rads Neutron fluence (

    22、MIL-STD-883, method 1017) 1 x 1013neutrons/cm21/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents

    23、 are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Componen

    24、t Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Do

    25、cument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable

    26、laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM)

    27、plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. _ 1/ Limits are guaranteed by de

    28、sign or process but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

    29、, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class

    30、M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Functional block diagram. The functional block diagram shall be as specified on figure 3. 3.2.4 Timing wavefo

    31、rms and test circuits. The timing waveforms and test circuits shall be as specified on figure 4. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing activity and ac

    32、quiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating

    33、 temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacture

    34、rs PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device class

    35、es Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for

    36、 device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device

    37、 class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that

    38、 the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-3

    39、8535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this draw

    40、ing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be ma

    41、de available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 53 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted wit

    42、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C 4.5 V VDD 5.5 V 2/ unless otherwi

    43、se specified Group A subgroups Device type Limits Unit Min Max Input low voltage RXEN, TXIHB, TXIN, TXIN VIL1, 2, 3 All 0.8 V Input high voltage RXEN, TXIHB, TXIN, TXIN VIH1, 2, 3 All 2.0 V Input low current RXEN, TXIHB, TXIN, TXIN IILVIL= 0.4 V 1, 2, 3 All -1.6 mA Input high current RXEN, TXIHB, TX

    44、IN, TXIN IIHVIH= 2.4 V 1, 2, 3 All 40 A Output low voltage RXOUT, RXOUT VOLIOL= 4.0 mA 1, 2, 3 All 0.55 V Output high voltage RXOUT, RXOUT VOHIOH= 0.4 mA 1, 2, 3 All 2.4 V 0 percent duty cycle Non-transmitting 60 50 percent duty cycle f = 1 MHz 60 VDDsupply current for each channel IDD100 percent du

    45、ty cycle f = 1 MHz 1, 2, 3 All 60 mA 0 percent duty cycle Non-transmitting 10 50 percent duty cycle f = 1 MHz 10 VCCsupply current for each channel ICC100 percent duty cycle f = 1 MHz 1, 2, 3 All 10 mA 0 percent duty cycle Non-transmitting 40 50 percent duty cycle f = 1 MHz 140 100 percent duty cycl

    46、e f = 1 MHz 02, 04, 06, 08 230 0 percent duty cycle Non-transmitting 40 50 percent duty cycle f = 1 MHz 140 VEEsupply current for each channel IEE100 percent duty cycle f = 1 MHz 1, 2, 3 01, 03, 05, 07 230 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking p

    47、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88644 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TC +125C 4.5 V VDD

    48、 5.5 V 2/ unless otherwise specified Group A subgroups Device type Limits Unit Min Max 0 percent duty cycle Non-transmitting 0.9 50 percent duty cycle f = 1 MHz 2.1 100 percent duty cycle f = 1 MHz 02, 04, 06, 08 3.3 0 percent duty cycle Non-transmitting 1.0 50 percent duty cycle f = 1 MHz 2.5 Power dissipation for each channel PCD100 percent duty cycle f = 1 MHz 1, 2, 3 01, 03, 05, 07 3.8 W Input threshold voltage (no response) VTH13/ Transformer-coupled stub, Input at f = 1 MHz, Rise/fall time 200


    注意事项

    本文(DLA SMD-5962-88644 REV F-2008 MICROCIRCUIT DIGITAL DRIVER-RECEIVER MONOLITHIC SILICON.pdf)为本站会员(inwarn120)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开