1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. - ro 12-08-01 C. SAFFLE REV SHEET REV A A A A A A SHEET 15 16 17 18 19 20 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLU
2、MBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, RADIATION HARDENED, DIFFERENTIAL AMPLIFI
3、ER, MONOLITHIC SILICON DRAWING APPROVAL DATE 10-02-17 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-08218 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E367-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59
4、62-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outli
5、nes and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 08218 01 V 2 A Federal stock class designator RH
6、A designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA
7、 designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic num
8、ber Circuit function 01 1/ AD8351 Radiation hardened differential amplifier 02 1/ AD8351 Radiation hardened differential amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements docume
9、ntation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and
10、 as follows: Outline letter Descriptive designator Terminals Package style 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Meets the performance requiremen
11、ts of Table I as long as section 6.7 is followed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absol
12、ute maximum ratings. 2/ Positive supply voltage (VPOS) . 6 V Power up voltage (PWUP) . VPOS Internal power dissipation (PD) 320 mW Maximum junction temperature (TJ) . +175C Operating temperature range (TA) . -55C to +125C Storage temperature range -65C to +150C Lead temperature range (soldering, 60
13、seconds) +300C Thermal resistance, junction-to-case (JC) 97C/W 3/ Thermal resistance, junction-to-ambient (JA) . 110C/W 4/ 1.4 Recommended operating conditions. Positive supply voltage (VPOS) . 3 V to 5.5 V Ambient operating temperature range (TA) -55C to +125C 1.4.1 Operating performance characteri
14、stics. 5/ Input resistance (RIN) 5 k Input capacitance (CIN) . 0.8 pF Output resistance (ROUT) 150 Output capacitance (COUT) . 0.8 pF Slew rate (SR) . 13000 V / s Second harmonic distortion (RL= 150 , f = 10 MHz) -80 dBc Third harmonic distortion (RL= 150 , f = 10 MHz) -61 dBc Third order intermodul
15、ation distortion (IMD) (RL= 150 , f1 = 9.5 MHz, f2 = 10.5 MHz) . -68 dBc Noise spectral density (RTI) (f = 10 MHz) 2.65 nV/ Hz Second harmonic distortion (RL= 150 , f = 70 MHz) -62 dBc Third harmonic distortion (RL= 150 , f = 70 MHz) -66 dBc Third order intermodulation distortion (IMD) (RL= 150 , f1
16、 = 69.5 MHz, f2 = 70.5 MHz) -64 dBc Noise spectral density (RTI) (f = 70 MHz) 2.7 nV/ Hz Second harmonic distortion (RL= 150 , f = 140 MHz) -51 dBc Third harmonic distortion (RL= 150 , f = 140 MHz) -52 dBc Third order intermodulation distortion (IMD) (RL= 150 , f1 = 139.5 MHz, f2 = 140.5 MHz) -64 dB
17、c Noise spectral density (RTI) (f = 140 MHz) 2.75 nV/ Hz Second harmonic distortion (RL= 150 , f = 240 MHz) -38 dBc Third harmonic distortion (RL= 150 , f = 240 MHz) -49 dBc Third order intermodulation distortion (IMD) (RL= 150 , f1 = 239.5 MHz, f2 = 240.5 MHz) . -61 dBc Noise spectral density (RTI)
18、 (f = 240 MHz) 2.9 nV/ Hz _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Measurement taken under absolute worst case conditions. Data taken with a thermal camera for
19、 highest power density location. See MIL-STD-1835 for average package thermal numbers. 4/ Measurement taken under absolute worst case conditions. Data taken with a thermal camera for highest power density location. 5/ Unless otherwise specified, VPOS = 5 V, PWUP = VPOS, load resistance (RL) = 1 k, g
20、ain resistance (RG) = 200 , gain (AV) = 10 dB, f = 70 MHz, and TA= +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FOR
21、M 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 100 krads(Si) 6/ Maximum total dose available (dose rate 10 mrads(Si)/s): Device type 02 50 krads(Si) 7/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks.
22、The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufa
23、cturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard M
24、icrocircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this dra
25、wing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 6/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enha
26、nced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 7/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD
27、-883 method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item req
28、uirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described here
29、in. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-P
30、RF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The b
31、lock diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance
32、characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. Th
33、e electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of t
34、he entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Mark
35、ing for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-3853
36、5, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required fr
37、om a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for dev
38、ice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-385
39、35, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any
40、 change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation
41、shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking pe
42、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TA +125C unless otherwise
43、 specified Group A subgroups Device type Limits Unit Min Max Input / output characteristics section Input common mode voltage adjustment range VICMR1,2,3 01, 02 1.1 3.9 V M,D,P,L,R 1 01 1.1 3.9 M,D,P,L 1 02 1.1 3.9 Maximum output voltage swing VOUT1 dB compressed 4,6 01, 02 4.5 VPP5 4 Output common
44、mode offset voltage VOSCM 1,2,3 01, 02 150 mV M,D,P,L,R 1 01 150 M,D,P,L 1 02 150 Output common mode offset drift VOSCM drift 7/ 2,3 01, 02 0.5 mV/C Output differential offset voltage VOSDIFF 1,2,3 01, 02 100 mV M,D,P,L,R 1 01 100 M,D,P,L 1 02 100 Output differential offset drift VOSDIFFdrift 7/ 2,3
45、 01, 02 0.3 mV/C Input bias current IIB1,2,3 01, 02 20 A M,D,P,L,R 1 01 20 M,D,P,L 1 02 20 Common mode rejection ratio CMRR VIN= 2.8 V and 0.7 V 1,2,3 01, 02 35 dB M,D,P,L,R 1 01 35 M,D,P,L 1 02 35 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted wi
46、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08218 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TA +125C unless otherwise specified
47、 Group A subgroups Device type Limits Unit Min Max Power interface section. Power up threshold voltage PWUP VIH1,2,3 01, 02 1.5 VPOS V M,D,P,L,R 1 01 1.5 VPOS M,D,P,L 1 02 1.5 VPOS VIL1,2,3 01, 02 0 0.8 M,D,P,L,R 1 01 0 0.8 M,D,P,L 1 02 0 0.8 Power up input bias current IIHPWUP at 5 V 1,2,3 01, 02 1
48、20 A M,D,P,L,R 1 01 120 M,D,P,L 1 02 120 IILPWUP at 0V 1,2,3 01, 02 -30 M,D,P,L,R 1 01 -40 M,D,P,L 1 02 -40 Quiescent current IQVPOS = 5.5 V, 5 V, 3 V 1,3 01, 02 33 mA 2 44 M,D,P,L,R 1 01 33 M,D,P,L 1 02 33 IQZPWUP at 0 V 1,2,3 01, 02 6 M,D,P,L,R 1 01 6 M,D,P,L 1 02 6 Dynamic performance section -3 dB bandwidth BW GAIN = 6 dB, 7/ 8/ VOUT 1.0 VPP4,5,6 01, 02 450 MHz GAIN = 12 dB, 7/ 8/ VOUT 1.0 VPP290 GAIN = 18 dB, 7/ 8/ VOUT 1.0 VPP210 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or netw
