1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness requirements. Add paragraphs 1.5, 3.2.4, 4.4.4.1, 4.4.4.1.1, and one footnote to Table I. Make change to IOZtest limits as specified under Table I. Make change to Table IIA and footnote 4/ under Table I. - ro 07-01-08 J. RO
2、DENBECK B Make changes to SEL, SEFI, SEU, SET limits and footnote 7/ as specified under paragraph 1.5. Add paragraphs 2.2, 4.4.4.2, and Table IB. - ro 09-08-26 C. SAFFLE REV SHET REV B B B SHEET 15 16 17 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC
3、 N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUI
4、T, DIGITAL-LINEAR, 12 BIT 50 MSPS ANALOG TO DIGITAL CONVERTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 06-03-22 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-05217 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E340-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without l
5、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05217 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q a
6、nd M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the follow
7、ing example: 5962 F 05217 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-3
8、8535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s)
9、identify the circuit function as follows: Device type Generic number Circuit function 01 TSA1201 12 bit 50 MSPS analog to digital converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requiremen
10、ts documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD
11、-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Ceramic flat pack with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHS
12、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05217 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ A VCCvoltage . 3.3 V D VCC
13、voltage 3.3 V Digital internal buffer supply voltage (VCCBI) 3.3 V Digital external buffer supply voltage (VCCBE) 3.6 V Power dissipation (PD) 200 mW 4/ Storage temperature range . -65C to +150C Operating temperature range -55C to +125C Lead temperature (soldering, 10 seconds) +260C Maximum junction
14、 temperature (TJ) +150C 5/ Thermal resistance, junction-to-ambient (JA) . 125C/W Thermal resistance, junction-to-case (JC): 22C/W 1.4 Recommended operating conditions. A VCCvoltage 2.3 V to 2.7 V D VCCvoltage . 2.3 V to 2.7 V Digital internal buffer supply voltage (VCCBI) 2.3 V to 2.7 V Digital exte
15、rnal buffer supply voltage (VCCBE) 2.3 V to 3.4 V Forced top reference voltage (VREFP) . 0.5 V to 1.8 V 6/ Forced bottom reference voltage (VREFM) 0 V to 0.5 V 6/ Forced input common mode voltage . 0.2 V to 1.1 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximu
16、m total dose available (dose rate = 50 300 rads(Si) / s) . 300 krads(Si) Single event latchup (SEL) at 125C . 110 MeV-cm2/mg 7/ Single event functional interrupt (SEFI) at 125C 110 MeV-cm2/mg 7/ Single event upset (SEU) sat= 3 x 10-4cm2at 55.9 MeV cm2/mg 7/ Single event transient (SET) sat= 3.5 x 10
17、-5cm2at 55.9 MeV cm2/mg 7/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltage are referenced to ground (GND). 3/ The limits for the p
18、arameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ To optimize the device power consumption according to the sampling frequency of the application, adjust IPOL(via resistance RPOLbetween GND and IPOL, RPOLminimum = 10 k). 5/ Maximu
19、m junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 6/ Condition VREFP VREFM 0.3 V. 7/ Limits are guaranteed by design or process but not production tested unless specified by the customer throug
20、h the purchase order or contact. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05217 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOC
21、UMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DE
22、FENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - Li
23、st of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Gover
24、nment publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 Stand
25、ard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P.O. Box C700, 100 Bar Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order o
26、f precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item
27、requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as describe
28、d herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
29、 MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 B
30、lock diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided
31、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05217 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradia
32、tion parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements
33、 shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feas
34、ible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in a
35、ccordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of co
36、mpliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be lis
37、ted as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-3853
38、5 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of mic
39、rocircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for devi
40、ce class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for dev
41、ice class M. Device class M devices covered by this drawing shall be in microcircuit group number 57 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05217 DEFENSE SUPPLY CENTE
42、R COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Static characteristics section Analog supply cu
43、rrent ICCA3/ 4/ 1, 2, 3 01 57 mA ICCA2FS= 1 MSPS, 3/ 4/ FIN= 100 kHz, TA= 25C 1 57 Digital supply current ICCD3/ 4/ 1, 2, 3 01 2.5 mA Digital internal buffer supply current ICCBI3/ 4/ 1, 2, 3 01 0.5 mA Digital external buffer supply current ICCBE3/ 4/ 1, 2, 3 01 13 mA Digital buffers supply current
44、in high impedance mode ICCBZ4/ 1, 2, 3 01 6 mA Analog input section Input capacitance CIN5/ 1 01 10 pFReference voltage section Top internal reference voltage VREFP1, 2, 3 01 0.79 1.16 V VREFP2FS= 1 MSPS, TA= 25C, FIN= 100 kHz 1 0.79 1.16 Input common mode voltage range VINCM1, 2, 3 01 0.4 0.65 V Di
45、gital inputs and output (clock input) Logic level (0) VIL1, 2, 3 01 0.8 V Logic level (1) VIH1, 2, 3 01 2 V Digital inputs and output (digital input) Logic level (0) VIL1, 2, 3 01 0.625 V Logic level (1) VIH1, 2, 3 01 1.875 V Digital inputs and output (clock output) Logic level (0) VOLIOL= 10 A 1, 2
46、, 3 01 0.25 V Logic level (1) VOHIOH= 10 A 1, 2, 3 01 2.25 V High impedance leakage current IOZOEBset to VIH1, 2, 3 01 -15 +15 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-
47、05217 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Dynamic cha
48、racteristics Spurious free dynamic range SFDR TA= 25C, FIN= 15 MHz 3/ 4 01 -63 dB Signal to noise ratio SNR TA= 25C, FIN= 15 MHz 3/ 4 01 59 dB Total harmonics distortion THD TA= 25C, FIN= 15 MHz 3/ 4 01 -64 dB Signal to noise and distortion ratio SINAD TA= 25C, FIN= 15 MHz 3/ 4 01 58 dB Effective number of bits ENOB TA= 25C, FIN= 15 MHz 3/ 4 01 9.7 bits Differential non linearity 5/ DNL FIN= 2 MHz, VINat +1 dBFS 4 01 -0.5 0.5 LSB Integral non linearity 5/ INL FIN= 2 MHz, VINat +1 dBFS 4 01 -2 2 LSB Switching characteristic
