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    DLA SMD-5962-05210 REV D-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED LOW VOLTAGE CMOS 16-BIT BUS BUFFER WITH BUS HOLD SERIES OUTPUT RESISTORS AND THREE-STATE OUTPUTS MONOLITHIC SI.pdf

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    DLA SMD-5962-05210 REV D-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED LOW VOLTAGE CMOS 16-BIT BUS BUFFER WITH BUS HOLD SERIES OUTPUT RESISTORS AND THREE-STATE OUTPUTS MONOLITHIC SI.pdf

    1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Correct DC input voltage range (VIN) in section 1.3. - TVN 06-04-04 Thomas M. Hess B Change Radiation Hardness Assurance (RHA) level to F. - TVN 07-02-09 Thomas M. Hess C Add die appendix A. Update the boilerplate paragraphs to

    2、 the current requirements of MIL-PRF-38535. - jak 09-03-11 Thomas M. Hess D Update radiation features in section 1.5 and add SEP test table IB. Update the boilerplate paragraphs to the current requirements of MIL-PRF-38535. - MAA 12-01-19 Thomas M. Hess REV SHEET REV D D D D D D D D D D D D D SHEET

    3、15 16 17 18 19 20 21 22 23 24 25 26 27 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAI

    4、LABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, RADIATION HARDENED, LOW VOLTAGE CMOS, , 16-BIT BUS BUFFER WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILIC

    5、ON DRAWING APPROVAL DATE 05-04-08 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-05210 SHEET 1 OF 27 DSCC FORM 2233 APR 97 5962-E074-11Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43

    6、218-3990 SIZE A 5962-05210 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are avai

    7、lable and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 05210 01 V X A Federal RHA Device Device Case Lead stock class designator type

    8、 class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RH

    9、A marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54VCXH

    10、162244 16-bit bus buffer with bus hold, series output resistors, and three-state outputs 02 54VCXH162244 16-bit bus buffer with bus hold, series output resistors, and three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance l

    11、evel as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). T

    12、he case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class

    13、M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05210 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage ra

    14、nge (VCC) -0.5 V dc to +4.6 V dc DC input voltage range (VIN) -0.5 V dc to +4.6 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input/output clamp current (IIK, IOK) 50 mA DC output current (per pin) (IOUT) . 50 mA DC VCCor GND current (per output pin) (ICC, IGND) 100 mA Maximum

    15、power dissipation (PD) . 400 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . 22C/W Junction temperature (TJ) +150C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC): Device type 01

    16、. +2.3 V dc to +3.6 V dc Device type 02 . +1.8 V dc to +3.6 V dc Input voltage range (VIN) -0.3 V dc to +3.6 V dc Output voltage range (VOUT). +0.0 V dc to VCCMaximum high level output current (IOH): VCC= 1.8 V (device type 02) -4 mA VCC= 2.3 V to 2.7 V . -8 mA VCC= 3.0 V to 3.6 V . -12 mA Maximum l

    17、ow level output current (IOL): VCC= 1.8 V (device type 02) +4 mA VCC= 2.3 V to 2.7 V . +8 mA VCC= 3.0 V to 3.6 V . +12 mA Input rise or fall time rate (t/V): VCC= 3.0 V 0 to 10 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate

    18、= 50 300 rad(Si)/s): For device types 01 and 02 . 300K rad(Si) Single Event Effects (SEE) for device type 01 and 02: No Single Event Latch-up (SEL) occurs at effective LET (see 4.4.4.2) 72 MeV-cm2/mg 5/ No Single Event Upset (SEU) occurs at effective LET (see 4.4.4.2) 72 MeV-cm2/mg 5/ 1/ Stresses ab

    19、ove the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the ful

    20、l specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Limits are guaranteed by design or process, but not production te

    21、sted unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05210 REVISION LEVEL D SHEET 4 DSC

    22、C FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents is those cited in the solicit

    23、ation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF D

    24、EFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadel

    25、phia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Gui

    26、de for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of p

    27、recedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item req

    28、uirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described h

    29、erein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, an

    30、d physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 and figure 1 herein

    31、. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Ground bounce waveforms and test circuit. The ground bounce

    32、waveforms and test circuit shall be as specified on figure 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05210 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR

    33、97 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.2.7 Radiation exposure circuit. The radiation exposure circuit sha

    34、ll be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance c

    35、haracteristics and post irradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are

    36、 defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5

    37、962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The c

    38、ertification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required

    39、from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certific

    40、ate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-385

    41、35, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change fo

    42、r device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Marit

    43、ime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Dev

    44、ice class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A

    45、 5962-05210 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Mi

    46、n Max Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All Q, V Open 1 -0.4 -1.5 V High level output voltage 3006 VOHVIN= VIH(min) or VIL(max) IOH= -100 A All All 2.7 V 1, 2, 3 2.5 V 3.6 V 1, 2, 3 3.4 IOH= -6 mA 2.3 V 1 1.8 2.7 V 1 2.2 IOH= -8 mA 2.3 V 1, 2, 3 1.7 3.0 V 1 2.4

    47、 IOH= -12 mA 3.0 V 1, 2, 3 2.2 IOH= -4 mA 02 All 1.8 V 1 1.4 Low level output voltage 3007 VOLVIN= VIH(min) or VIL(max) IOL= 100 A All All 2.7 V 1, 2, 3 0.2 V 3.6 V 1, 2, 3 0.2 IOL= 6 mA 2.3 V 1 0.4 2.7 V 1 0.4 IOL= 8 mA 2.3 V 1, 2, 3 0.6 3.0 V 1 0.55 IOL= 12 mA 3.0 V 1, 2, 3 0.8 IOL= 4 mA 02 All 1.

    48、8 V 1 0.3 High level input voltage VIH5/ All All 2.3 V 1, 2, 3 1.6 V 2.7 V 1, 2, 3 2.0 3.0 V 1, 2, 3 2.0 3.6 V 1, 2, 3 2.0 02 All 1.8 V 1, 2, 3 1.2 Low level input voltage VIL5/ All All 2.3 V 1, 2, 3 0.7 V 2.7 V 1, 2, 3 0.8 3.0 V 1, 2, 3 0.8 3.6 V 1, 2, 3 0.8 02 All 1.8 V 1, 2, 3 0.4 See footnotes a

    49、t end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05210 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test and MIL-


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