DLA MIL-PRF-19500 692 A VALID NOTICE 1-2009 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Types 2N7515 2N7.pdf
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DLA MIL-PRF-19500 692 A VALID NOTICE 1-2009 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Types 2N7515 2N7.pdf
1、PERFORMANCE SPECIFICATIONSemiconductor Device, Field Effect Radiation Hardened (TotalDose and Single Event Effects) Transistor, N-Channel Silicon,Types 2N7515, 2N7516, and 2N7517, JANTXVD, R and JANSD, RMIL-PRF-19500/692A, dated 10 September 2004, has been reviewedand determined to be valid for use
2、in acquisition.NOTICE OFVALIDATIONINCH-POUNDMIL-PRF-19500/692ANOTICE 109 July 2009NOTE: The activities above were interested in this document asof the date of this document. Since organizations andresponsibilities can change, you should verify the currency ofthe information above using the ASSIST Online database athttp:/assist.daps.dla.mil.AMSC N/A FSC 5961Custodians:Army - CRNavy - ECAir Force - 85DLA - CCOther - NAPreparing Activity:DLA - CCProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
