1、 MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specificati
2、on is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, e
3、nhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 similar to TO-205AF (forme
4、rly TO-39), figure 2 (LCC), and figures 3 and 4 for JANHC and JANKC die dimensions. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC= +25C PTTA= +25C VDSVDGVGSID1 (2) (3) TC= +25C ID2 (2) TC= +100C ISIDM(4) TJand TSTGVISO70,000 foot altitude W W V dc V dc V dc A dc A dc A dc
5、A(pk) C V dc 2N6782, U 15 0.8 100 100 20 3.5 2.25 3.50 14.0 -55 to 2N6784, U 15 0.8 200 200 20 2.25 1.50 2.25 9.0 +150 2N6786, U 15 0.8 400 400 20 1.25 0.80 1.25 5.5 400 (1) Derate linearly 0.12 W/C for TC +25C. (2) The following formula derives the maximum theoretical IDlimit. IDis limited by packa
6、ge and internal wires and may be limited by pin diameter: (3) See figure 5, maximum drain current graph. (4) IDM= 4 x ID1as calculated in note 2. AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land
7、and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and proce
8、ss conversion measures necessary to comply with this revision shall be completed by 27 March 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH
9、)VDS VGSID= 0.25 Max IDSS1VGS= 0 VDS= 80 Max rDS(ON)(1) VGS= 10 V dc RJCmax ID= 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2(2) V dc V dc A dc ohm ohm C/W Min Max 2N6782, U 2N6784, U 2N6786, U 100 200 400 2.0 2.0 2.0 4.0 4.0 4.0 25 25 25 0.60 1.50 3.60 1.20 3.15 9.00 8.33 8.33
10、 8.33 (1) Pulsed (see 4.5.1). (2) See figure 6, thermal impedance curves. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or rec
11、ommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2
12、.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPA
13、RTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.
14、dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text o
15、f this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 3 Dimensions Ltr Inches
16、Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.06 4.57 HD .335 .370 8.51 9.40 h .009 .041 0.23 1.04 J .028 .034 0.71 0.86 2 k .029 .045 0.74 1.14 3 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8 LS .200 TP 5.08 TP 6 LU .016 .019 0.41 0.48 7, 8 L1 .050 1.27 7, 8 L2
17、.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, J shall be held for a minimum length of .011 (0.28 mm). 3. Dimension k measured from maximum HD. 4. Outline in
18、this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum
19、material condition (MMC) relative to tab at MMC. 7. LU applies between L1and L2. LD applies between L2and L minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In a
20、ccordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-205AF. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 4 Dimensions Ltr. Inches Millimeters Min Max Min Max BL .345 .360 8.76
21、 9.14 BW .280 .295 7.11 7.49 CH .095 .115 2.41 2.92 LL1 .040 .055 1.02 1.40 LL2 .055 .065 1.40 1.65 LS .050 BSC 1.27 BSC LS1 .025 BSC 0.635 BSC LS2 .008 BSC 0.203 BSC LW .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.14 1.40 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30
22、 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Ceramic package only. FIGURE 2. Physical dimensions for LCC. 181Provided by IHSNot for ResaleNo reproduction or networking permit
23、ted without license from IHS-,-,-MIL-PRF-19500/556K 5 2N6782, 2N6784, and 2N6786 Ltr Dimensions - 2N6782 Dimensions - 2N6784 Dimensions - 2N6786 Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max A 0.082 0.092 2.08 2.34 0.082 0.092 2.08 2.34 0.10
24、1 0.111 2.55 2.81 B 0.059 0.069 1.48 1.74 0.062 0.072 1.57 1.83 0.071 0.081 1.81 2.07 C 0.021 0.031 0.53 0.79 0.020 0.030 0.50 0.76 0.020 0.030 0.50 0.76 D 0.020 0.030 0.50 0.76 0.019 0.029 0.47 0.73 0.019 0.029 0.47 0.73 E 0.013 0.023 0.32 0.58 0.012 0.022 0.31 0.57 0.012 0.022 0.31 0.57 F 0.014 0.
25、024 0.34 0.60 0.013 0.023 0.32 0.58 0.013 0.023 0.32 0.58 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel,
26、and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .0187 inch (0.475 mm) .0050 inch (0.130 mm). FIGURE 3. JANHCA and JANKCA die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 6
27、 2N6782 and 2N6784 Ltr Dimensions - 2N6782 and 2N6784 Inches Millimeters Min Max Min Max A .082 .089 2.08 2.26 B .062 .066 1.58 1.68 C .019 .021 0.48 0.53 D .022 .024 0.56 0.61 E .012 .014 0.30 0.36 F .013 .015 0.33 0.38 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general inform
28、ation only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .015 inch (0.38 mm) .001 inch (0.025 mm). *
29、FIGURE 4. JANHCB and JANKCB die dimensions (2N6782, 2N6784). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified her
30、ein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and
31、 definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. nC - - - - - - - - - - - - - - - - - - - - - nano coulomb. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 an
32、d on figures 1 (TO-205), 2 (LCC), and 3 and 4 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction
33、. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precaution
34、s to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.6). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the
35、leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate mu
36、st be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The elec
37、trical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or
38、 networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 8 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Q
39、ualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specificati
40、on sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accord
41、ance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 9 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following
42、 measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.1). Gate stress test (see 4.3.1). (3)
43、 (4) Unclamped inductive switching, method 3470 of MIL-STD-750 (see 4.3.2), optional. Unclamped inductive switching, method 3470 of MIL-STD-750 (see 4.3.2), optional. (3) 3c Method 3161 of MIL-STD-750 (see 4.3.3). Method 3161 of MIL-STD-750 (see 4.3.3). 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
44、 herein. Not applicable. 10 Method 1042 of MIL-STD-750, test condition B. Method 1042 of MIL-STD-750, test condition B. 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1, Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent o
45、f initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A, t = 240 hours. Method 1042 of MIL-STD-750, test condition A. 13 Subgroup
46、s 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 perce
47、nt of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial val
48、ue. VGS(TH)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. (4) This test is optional in screening if performed in table I, subgroup 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/556K 10 4.3.
