1、 MIL-PRF-19500/435L 6 July 2012 SUPERSEDING MIL-PRF-19500/435K 8 April 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1, 1N4614UR-1 THROUGH 1N4627UR-1, PLU
2、S C AND D TOLERANCE SUFFIX DEVICES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500.
3、 1. SCOPE 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in
4、MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5. 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC). 1.3 Maximum ratings Unless otherwise specified TC= 25C. Maximu
5、m ratings are as shown in maximum test ratings herein (see 3.8), and as follows: a. PTL= 500 mW (DO-35) at TL= 50C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). (Derate IZto 0 dc at +175C). b. PTEC= 500 mW (DO-213AA) at TEC= 125C. (Derate to 0 at
6、175C). -65C TJ +175C; -65C TSTG +175C. c. PTPCB= 400 mW, TA= +55C. (Derate to 0 at +175C). * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact inform
7、ation can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 October 2012. Pr
8、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/435L 2 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings herein (see 3.8) and as follows: a. 1.8 V dc VZ 100 V dc. b. RJL= 250C/
9、W (maximum) at L = .375 inch (9.53 mm) (DO-35). c. Noise density see 4.5.5 and figure 4. d. RJEC= 100C/W (maximum) junction to end-caps (DO-213AA). e. See figures 5, 6, and 7 for derating curves. TA= +75C for both axial and Metal Electrical Leadless Face (MELF) (US) on printed circuit board (PCB), P
10、CB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .05 inch (1.27 mm) x .087 inch (2.21 mm); pads (Axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm) x 1 inch (25.4 mm) long, axial lead length L .125 inch ( 3.18 mm); RJAwith a defined thermal resistanc
11、e condition included is measured at IO= 1 A. f. RJA= 300C/W. Junction to ambient including PCB, see 1.4.e herein. g. For thermal impedance curves, see figures 8, 9, and 10. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specific
12、ation. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
13、 of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless other
14、wise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of the
15、se documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of
16、a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or netwo
17、rking permitted without license from IHS-,-,-MIL-PRF-19500/435L 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max BD .056 .090 1.42 2.29 3 BL .140 .200 3.56 5.08 3 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 LL1.050 1.27 4 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents a
18、re given for general information only. 3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including slugs. 4. Within this zone lead, diameter m
19、ay vary to allow for lead finishes and irregularities other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Semiconductor device, diode, types 1N4099-1 through 1N4135-1 and 1N4614-1 through 1N4627-1 (DO-35). Provided by IHSNot for ResaleNo rep
20、roduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/435L 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 ECT .016 .022 0.41 0.56 BL .130 .146 3.30 3.71 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given f
21、or general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and 1N4614UR-1 through 1N4627UR-1 (DO-213AA). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
22、 IHS-,-,-MIL-PRF-19500/435L 5 JANHCA and JANKCA JANHCB and JANKCB Ltr Inches Millimeters Ltr Inches Millimeters Min Max Min Max Min Max Min Max A .021 .025 0.53 0.63 A .024 .028 0.61 0.71 B .013 .017 0.33 0.43 B .017 .021 0.43 0.53 JANHCC and JANKCC Ltr Inches Millimeters Min Max Min Max A .019 .023
23、 0.48 0.58 B .013 .017 0.33 0.43 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The JANHCA and JANKCA die thickness is .010 (0.25 mm) .002 inches (0.05 mm). Anode metallization: Al, thickness = 25,000 minimum; cathode metallization: Au, thick
24、ness = 4,000 minimum. 4. The JANHCB and JANKCB die thickness is .010 (0.25 mm) .002 inches (0.05 mm). Anode metallization: Al, thickness = 40,000 minimum; cathode metallization: Au, thickness = 5,000 minimum. * 5. The JANHCC and JANKCC die thickness is .010 (0.25 mm) .002 inches (0.05 mm). Anode met
25、allization: Al, thickness = 25,000 minimum; cathode metallization: Au, thickness = 4,000 minimum. 6. Circuit layout data: For zener operation, cathode must be operated positive with respect to anode. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dim
26、ensions JANHC and JANKC die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/435L 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
27、furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations,
28、 symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: C 2 percent voltage tolerance. D 1 percent voltage tolerance. TECTemperature of end-cap. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 an
29、d on figures 1, 2, and 3 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices shall be in accordanc
30、e with the requirements of MIL-PRF-19500. 3.4.3 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction or straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). 3.4.4 JANS construction. Constru
31、ction shall be dash one or straight through construction, category I or II metallurgical bond in accordance with MIL-PRF-19500. 3.4.5 Package outline. This specification contains one standard package; DO-35. Any user of this specification that has a specific package outline requirement shall specify
32、 their preference in the acquisition order. If package style is not specified, the manufacturer may supply either package. Surface mount devices are in a DO-213AA package. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and as specified herein. 3.5.1 Polarity. The polarity shall be in
33、dicated with a contrasting color band to denote the cathode end. Alternately, for surface mount (UR) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 3.5.2 Marking of UR suffix version devices. Fo
34、r UR suffix (surface mount) devices only, all marking (except polarity) may be omitted from the body of the device, but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specifi
35、ed in 1.3, 1.4, and table I herein. 3.6.1 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, JANTXV, or JANS devices which have successfully completed all applicable screening, table I, and groups B and C testing as 5 percent tolerance devices. All su
36、blots of C and D suffix devices shall pass table I, subgroup 2 at the tightened tolerances. The PTLor PTECfor C and D suffix devices shall be maintained at 30C 2C for VZcorrelation on tight tolerances. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
37、MIL-PRF-19500/435L 7 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2, 4.4.3, table I, II, and III. 3.8 Maximum and primary electrical characteristics test requirements. Maximum test ratings for voltage regulator diodes are specified in tab
38、le III herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified he
39、rein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification.
40、Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revis
41、ion shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with MIL-PRF-19500. 4.2.3 Construction verification. Cross sectional photos from three devices shall be submitted in
42、the qualification report. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/435L 8 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified h
43、erein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen table E-IV of MIL-PRF-19500 Measurement JANS level JANTXV and JANTX level 1a 1b Required Required Not required Required (JANTXV only) 2
44、Not required Not required 3a 3b (1) 3c Required Not applicable Required (see 4.3.2) Required Not applicable Required (see 4.3.2) 4, 5, and 6 Not applicable Not applicable 8 Required Not required 9 Required on Nom VZ 10 V, IR1and VZNot applicable 10 Required on Nom VZ 10 V Not applicable 11 Required
45、IR1 100 percent of initial reading or 10 nA whichever is greater. VZ 2 percent of initial reading. Required IR1 and VZ12 Required, see 4.3.3 t = 240 hours. Required, See 4.3.3, t = 48 hours (2) 13 Subgroup 2 of table I herein; IR1 100 percent of initial reading or 10 nA whichever is greater; VZ 2 pe
46、rcent of initial reading. Required Subgroup 2 of table I herein; IR1 100 percent of initial reading or 10 nA whichever is greater; VZ 2 percent of initial reading. 15 Required Not required 16 Required Not required (1) Thermal impedance may be performed any time after sealing provided temperature cyc
47、ling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) PDA = 5 percent for screen 13, applies to IR1, VZ, IR1and VZ(JANS only). 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix G of MIL-PRF-19500. 4.3.1.1 J
48、AN product. JAN product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening requirements. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 as applicable of M
49、IL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). See table II, subgroup 4 herein. Measurement delay time (tMD) = 70 us max. 4.3.3 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.4 herein): IZ(min)= IZ(PCB). TA= 75C maximum
