1、 MIL-PRF-19500/423G 9 January 2012 SUPERSEDING MIL-PRF-19500/423F 1 September 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5581 AND 2N5582, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the
2、Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Three levels of product assurance are pr
3、ovided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-46). 1.3 Maximum ratings unless otherwise specified TA= +25C. Types PT= (1) TA= +25C PT= (2) TC= +25C RJA TA= +25C (1) (3) RJC TC= +25C (2) (4) VCBOVEBOVCEOICTSTGand TJ2N5581 2N5582 W 0.5
4、0.5 W 2.0 2.0 C/W 325 325 C/W 80 80 V dc 75 75 V dc 6 6 V dc 50 50 mA dc 800 800 C -65 to +200 (1) For derating see figure 2. (2) For derating see figure 3. (3) For thermal resistance see figure 4. (4) For thermal resistance see figure 5. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or ques
5、tions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:
6、/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 9 April 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/423G 2 1.4 Primary electrical characteri
7、stics unless otherwise specified TA= +25C. hFE2VCE= 10 V dc hFE4VCE= 10 V dc |hfe| VCE= 20 V dc IC= 20 mA dc CoboVCB= 10 V dc Switching IC= 1.0 mA dc IC= 150 mA dc (1) f = 100 MHz IE= 0 100 kHz f 1 MHz ton toff ton+ toff Min Max 2N5581 2N5582 35 75 2N5581 2N5582 40 100 120 300 2.5 5.0 pF 8 ns 35 ns
8、300 ns 18 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or a
9、s examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifica
10、tions, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF
11、-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Docum
12、ent Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothin
13、g in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specific
14、ation shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH
15、S-,-,-MIL-PRF-19500/423G 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 LL .500 1.750 12.70 44.45 6 LU .016 .019 0.41 0.48 6 L1 .050 1.27 6 L2 .250 6.35 6 Q .040 1.02 3 TL .
16、028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 4 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zon
17、e are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - 000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6. Symbol LU applies between L1and L2. Dimension LD applie
18、s between L2and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGUR
19、E 1. Physical dimensions 2N5581 and 2N5582 (TO-46). TO-46 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/423G 4 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in M
20、IL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable
21、in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified
22、 in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and s
23、hall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (s
24、ee 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a
25、prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for Res
26、aleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/423G 5 * 4.3 Screening (JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table
27、I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANTX and JANTXV level (1) 3c Thermal impedance (see 4.3.2) 9 Not applicable 10 48 hours minimum 11 ICBO2; hFE412 See 4.3.1 13 Subgroups 2 of table I herein; ICBO2=
28、100 percent of initial value or 5 nA dc, whichever is greater. hFE4= 15 percent (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc.
29、 Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV
30、 quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance
31、 with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-1
32、9500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroup 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be perfo
33、rmed since solderability and resistance to solvents testing is performed in table I herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
34、IHS-,-,-MIL-PRF-19500/423G 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified as follows for JAN, JANTX, and JANTXV group B testing herein. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after
35、 each following step and shall be in accordance with table I, subgroup 2 and 4.5.2 herein. 4.4.2.1 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all cat
36、astrophic failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identified as wafer lot and /or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejec
37、ted unless an appropriate determined corrective action to eliminate the failure mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achiev
38、e TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340
39、hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the f
40、ollowing requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. Whe
41、n the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B herein for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance wi
42、th the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.2 herein. 4.4.3.1 Group C inspecti
43、on (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RJAand RJConly, as applicable (see 1.3) and in accordance with thermal impedance curves. C6 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking permitted with
44、out license from IHS-,-,-MIL-PRF-19500/423G 7 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes table I tests he
45、rein for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specifie
46、d for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the applicable steps of 4.5.2. 4.5 Methods of inspection.
47、 Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 S
48、ymbol Limit Unit Method Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB= 60 V dc ICB02(1) 100 percent of initial value or 8 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE= 10 V dc; IC= 150 mA dc; pulsed see 4.5.1 hFE4(1) 25 percent change from initial re
49、ading. (1) Devices which exceed the table I limits for this test shall not be accepted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/423G 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 2/ Solderability 3/ Resistance to
