1、MIL-PRF-19500/231P 3 August 2013 SUPERSEDING MIL-PRF-19500/231N 27 July 2012 * SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, JANTXV, JANHC, AND JANKC This specification is approved for use by all Depa
2、rtments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for controlled forward voltage switching diodes. Thre
3、e levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (DO-35 and DO-7), figure 2 (DO-213AA), figure 3 (UB), and figure 4 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Type VBRVRWMIO(PCB)TA
4、= 75C (1) (2) IFSMtp= 8.3ms TSTGpads for (UR) = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included, is measured
5、at IO= 200 mA dc. (3) See figure 7, 8, and 9 for thermal impedance curves. (4) RJSPrefers to thermal resistance from junction to the solder pads of the UB package. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VA
6、C, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. JANS1N4150-1 is superseded by MIL-PRF-19500/609 JANS1N6640
7、(see 6.4). The DO-7 version of the 1N3600 is inactive for new design. The documentation and process conversion measures necessary to comply with this document shall be completed by 3 November 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-
8、PRF-19500/231P 2 1.4 Primary electrical characteristics. TA= +25C, unless otherwise specified. Limits (1) VF1IF= 1 mA dc VF2IF= 10 mA dc VF3IF= 50 mA dc (pulsed) VF4IF= 100 mA dc (pulsed) VF5IF= 200 mA dc (pulsed) IR1at VR= 50 V dc (pulsed) Minimum Maximum V dc 0.540 0.620 V dc 0.660 0.740 V dc 0.76
9、0 0.860 V dc 0.820 0.920 V dc 0.870 1.000 A dc 0.1 Limits (1) IR2VR= 50 V dc TA=+150C C VR= 0; f = 1 Mhz; ac signals = 50 mV(p-p) trr1IF= IR= 10 to 100 mA dc RL= 100 ohms Minimum Maximum A dc 100 pf 2.5 ns 4 (1) Primary electrical characteristics for surface mount devices are equivalent to the corre
10、sponding non-surface mount devices unless otherwise specified. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended fo
11、r additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Governme
12、nt documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF D
13、EFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardiz
14、ation Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedenc
15、e. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 3 Types Symbol Dimensions Inches Millimeters Min Max Mi
16、n Max 1N4150-1, 1N3600 (DO-35) BD .056 .075 1.42 1.91 BL .140 .180 3.56 4.57 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 1N3600 (DO-7) BD .056 .107 1.42 2.72 BL .140 .300 3.56 7.62 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are given fo
17、r general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. TYPES 1N4150-1, 1N3600 FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 4 Symbol Dimensions Inche
18、s Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.71 ECT .016 .022 0.41 0.56 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Referencing to dimension S, minimum clearance of gla
19、ss body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, 1N4150UR-1 (DO-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/
20、231P 5 * FIGURE 3. Physical dimensions, surface mount (UB version). 2 1 1N4150UBCA 1N4150UBD 1N4150UB 1N4150UBCC Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 6 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millim
21、eters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1.
22、Dimensions are in inches. Millimeters are given for general information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimens
23、ions, surface mount (UB version). - Continued Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 7 Ltr Dimensions Inches Millimeters Min Max Min Max A .014 .018 .360 .460 B .005 .007 .127 .180 C .008 .012 0.20 0.30 NOTES: 1. Dimension
24、s are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al Back (cathode): Au Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thicknes
25、s: .010 inches (0.25 mm) .002 inches (0.05 mm). * 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical dimensions, JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 8
26、 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on t
27、he applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. SP Solder pad on UB devices. VfrForward recovery voltage.
28、Specified maximum forward voltage used to determine forward recovery time. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads), 2 (DO-213AA), 3 (UB), and 4 (JANHC and JANKC). 3.4.1 Lead finish. Lead finish
29、shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded, double plug construction in
30、 accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to achieve axial thermal compensation. Dimensional t
31、olerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessive stresses due
32、to the inherent CTE mismatch. The UB devices shall be eutectically mounted and wire bonded in a ceramic package. The UR version shall be structurally identical to the axial leaded versions except for end-cap lead attachment. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacture
33、rs identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, and JANTXV may be abbreviated as J, JX, and J
34、V, respectively. The part number may be reduced to J4150, JX4150, or JV4150. No color coding shall be permitted for part numbering. 3.5.1 UR devices. For UR version devices only, all marking, except polarity, may be omitted from the body, but shall be retained on the initial container. Polarity mark
35、ing of UR devices shall consist as a minimum, a band or three contrasting dots around the periphery of the cathode. At the option of the manufacturer, UR surface mount devices may include laser marking on an end-cap, to include part number and lot date code for all levels. The prefixes JAN, JANTX, o
36、r JANTXV may be abbreviated as J, JX, or JV, respectively. (Example: The part number may be reduced to JV4150). 3.5.2 UB devices. UB devices do not require polarity marking. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
37、as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will aff
38、ect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 9 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification
39、inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in acc
40、ordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in t
41、able II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. Specified elec
42、trical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screening (see table E-IV of MIL-PRF-19500) JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.3) 9 Not required 10 Method 1038 of MIL-STD-750, conditi
43、on A (2) 11 IR1and VF212 See 4.3.2 (3) (4) 13 Subgroup 2 of table I herein; IR1= 100 percent of initial value or 25 nA dc, whichever is greater; VF2= 25 mV dc. (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500,
44、screen 3 prior to this thermal test. (2) Test within 24 hours after removal from test. (3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. (4) PDA 5 percent. * 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in acco
45、rdance with MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/231P 1
46、0 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2): Method 1038 of MIL-STD-750, condition B. VR= rated VRWM; f = 50 - 60 Hz; IO(min)= IO(PCB) or IF= IO(PCB). The maximum current density of small die shall be submitted to the qualifying activity for approval. With a
47、pproval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, mounting conditions, etc.) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and perf
48、ormance history will be essential criteria for burn-in modification approval. 4.3.3 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IHand IM. tMDshall be 70 s maximum, tHshall be 10 ms maximum. See group E, subgroup 4 of table II herein. 4.3.4 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level requirements. Electrical te
