1、 REVISIONSLTR DESCRIPTION DATE APPROVEDA Add case outline Y. Add paragraph 1.6. Make change to output current, from 72 mA to 130 mA as specified under paragraph 1.3. Make changes to constant output current under paragraph 1.4. Under Table I; IOLCtest, delete 45 mA and substitute 42 mA, IOLC0test, de
2、lete 11% and substitute 12%; IOLC3test, delete 10%/V and substitute 11%/V; and IOLC4test, delete 15%/V and substitute 20%/V. - ro 10-05-18 C. SAFFLE Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV A A PAGE 18 19 REV STATUS OF PAGES REV A A A A A A A A A A A A A A A A A PAGE
3、1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 Original date of drawing YY-MM-DD CHECKED BY RAJESH PITHADIA TITLE MICROCIRCUIT, LINEAR, 16 CHANNEL, CONSTANT CURRENT SINK LED DRIVER, MONOLITHIC SILICON 10-04-08 APPR
4、OVED BY CHARLES F. SAFFLE SIZE A CODE IDENT. NO. 16236 DWG NO. V62/10610 REV A PAGE 1 OF 19 AMSC N/A 5962-V048-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/1
5、0610 REV A PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a 16 channel, constant current sink light emitting diode (LED) driver microcircuit, with an operating temperature range of -40C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers
6、PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/10610 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device t
7、ype Generic Circuit function 01 TLC5940-EP 16 channel, constant current sink LED driver 1.2.2 Case outline(s). The case outline(s) are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 28 MO-153 Plastic surface mount with thermal pad Y 32 MO-220 Plastic quad flat pack 1
8、.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacture: Finish designator Material A Hot solder dip B Tin-lead plateC Gold plateD PalladiumE Gold flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking perm
9、itted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 3 1.3 Absolute maximum ratings. 1/ 2/ Input voltage range (VIN) . -0.3 V to 6 V 3/ Output current (dc) (IOUT) 130 mA Input voltage range (VIN): VBLANK, VDCPRG, V
10、SCLK, VXLAT, VSIN, VGSCLK, VIREF. -0.3 V to VCC+0.3 V Output voltage range: VSOUT, VXERR. -0.3 V to VCC+0.3 V VOUT0to VOUT15. -0.3 V to 18 V ElectrIcally eraseable programmable read only memory (EEPROM) program range -0.3 V to 24 V EEPROM write cycles 25 Electrostatic discharge (ESD) rating: Human b
11、ody model (HBM) . 2 kV Charge device model (CDM) 500 V Power dissipation (PD) . See 1.5, dissipation ratings Storage temperature range (TSTG) -55C to +150C Operating free-air temperature range (TA) . -40C to +125C Package thermal impedance See 1.6, thermal characteristics 1.4 Recommended operating c
12、onditions. 4/ DC characteristics Supply voltage (VCC) . 3 V to 5.5 V Voltage applied to output (OUT0 - OUT15) (VOUT) . 17 V High level input voltage (VIH) . 0.8VCCto VCCLow level input voltage (VIL) GND to 0.2VCCHigh level output current (IOH) (VCC= 5 V at SOUT) -1 mA Low level output current (IOL)
13、(VCC= 5 V at SOUT) 1 mA Constant output current (IOLC) (OUT0 to OUT15): ( 40C to 125C ) 72 mA ( 40C to 85C, VCC 3.6 V ) . 60 mA ( 40C to 85C, VCC 3.6 V ) . 120 mA EEPROM program range (VPRG) 20 V to 23 V 1/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to th
14、e device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ Long t
15、erm high temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of overall device life. See manufacturer for additional information on enhanced plastic packaging. 3/ All voltages are within respect to device GND terminal. 4/ Use of this product
16、beyond the manufacturers design rules or stated parameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
17、-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 4 1.4 Recommended operating conditions - continued. 4/ AC characteristics (unless otherwise specified, VCC= 3 V to 5.5 V) Data shift clock frequency (fSCLK) . 30 MHz Grayscale clock frequency (
18、fGSCLK) 30 MHz SCLK pulse duration ( twh0/ twl0) (SCLK = H/L) see figure 3 . 16 ns GSCLK pulse duration ( twh1/ twl1) (GSCLK = H/L) see figure 3 16 ns XLAT pulse duration ( twh2) (XLAT = H) see figure 3 20 ns BLANK pulse duration ( twh3) (BLANK = H) see figure 3 20 ns Setup time: 5/ tsu0( SIN to SCL
19、K ) see figure 3 5 ns tsu1(SCLK to XLAT ) see figure 3 . 10 ns tsu2(VPRG to SCLK ) see figure 3 . 10 ns tsu3(VPRG XLAT ) see figure 3 10 ns tsu4(BLANK to GSCLK ) see figure 3 . 10 ns tsu5(XLAT to GSCLK ) see figure 3 30 ns tsu6(VPRG to DCPRG ) see figure 4 1 ms Hold time: 5/ th0(SCLK to SIN ) see fi
20、gure 3 3 ns th1(XLAT to SCLK ) see figure 3 10 ns th2(SCLK to VPRG ) see figure 3 . 10 ns th3(XLAT to VPRG ) see figure 3 . 10 ns th4(GSCLK to BLANK ) see figure 3 . 10 ns th5(DCPRG to VPRG ) see figure 3 1 ms tprog(programming time for EEPROM) see figure 4 . 20 ms 1.5 Dissipation ratings. Package P
21、ower rating TA 25C Derating factor above TA= 25C Power rating TA= 70C Power rating TA= 85C Power rating TA= 125C Case X, thermal pad soldered 1/ 3958 mW 31.67 mW/C 2533 mW 2058 mW 791 mW Case X, thermal pad unsoldered 2026 mW 16.21 mW/C 1296 mW 1053 mW 405 mW Case Y 1/ 3482 mW 27.86 mW/C 2228 mW 181
22、1 mW 696 mW 1/ The power pad is soldered to the printed circuit board with 2 ounce (56.7 grams) copper trace. _ 5/ and indicates a rising edge, and a falling edge respectively. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, CO
23、LUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 5 1.6 Thermal characteristics. Thermal metric Symbol Case X Case Y Unit Thermal resistance, junction-to-ambient 1/ JA35.4 33.9 C/W Thermal resistance, junction-to-case (top) 2/ JC(TOP)29.94 30 C/W Thermal resistance, junc
24、tion-to-case (bottom) 3/ JC(BOTTOM)5.37 3.9 C/W Thermal resistance, junction-to-board 4/ JB15.02 9.3 C/W Characterization parameter, junction-to-top 5/ JT1.297 0.619 C/W Characterization parameter, junction-to-board 6/ JB10.96 9.3 C/W 1/ The thermal resistance, junction-to-ambient under natural conv
25、ection is obtained in a simulation on a JEDEC standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a. 2/ The thermal resistance, junction-to-case (top) is obtained by simulating a cold plate test on the package top. No specific JEDEC standard test exists, but a cl
26、ose description can be found in the ANSI SEMI standard G30-88. 3/ The thermal resistance, junction-to-case (bottom) is obtained by simulations of this device as configured per MIL-STD-883 method 1012.1. 4/ The thermal resistance, junction-to-board is obtained by simulating in an environment with a r
27、ing cold plate fixture to control the printed circuit board (PCB) temperature, as described in JESD51-8. 5/ Characterization parameter, junction-to-top (JT) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure d
28、escribed in JESD51-2a (sections 6 and 7). 6/ Characterization parameter, junction-to-board (JB) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). Provided by IHSNot
29、for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 6 2. APPLICABLE DOCUMENTS JEDEC PUB 95 - Registered and Standard Outlines for Semiconductor Devices JESD51-2a - Integ
30、rated Circuits Thermal Test Method Environmental Conditions - Natural Convention (still air) JESD51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages JESD51-8 - Integrated circuits Thermal Test Method Environmental Conditions - Junction to Board (Applications for c
31、opies should be addressed to the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) ANSI SEMI STANDARD G30-88 - Test Method for Junction-to-Case Thermal Resistance Measurements for Ceramic Packages (Applications for copies should be addr
32、essed to the American National Standards Institute, Semiconductor Equipment and Materials International, 1819 L Street, NW, 6 th floor, Washington, DC 20036 or online at http:/www.ansi.org) MIL-STD-883 - Test Method Standard Microcircuits. (Copies of these documents are available online at https:/as
33、sist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manuf
34、acturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating condit
35、ions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline. The case outline shall be as shown in 1.2.2
36、 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. 3.5.3 Serial data input timing waveforms. The serial data input timing waveforms shall be as shown in figure 3. 3.5.4 EEPROM programming timing waveforms. The EEPROM programming timing waveforms shall
37、be as shown in figure 4. 3.5.5 Parameter measurement circuits. The parameter measurement circuits shall be as shown in figure 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 1623
38、6 DWG NO. V62/10610 REV A PAGE 7 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions VCC= 3 V to 5.5 V unless otherwise specifiedTemperature, TADevice type Limits Unit Min Max High level output voltage VOHIOH= -1 mA, SOUT -40C to +125C 01 VCC-0.5 V Low level output voltage VOL
39、IOL= 1 mA, SOUT -40C to +125C 01 0.5 V Input current IINVIN= VCCor GND, BLANK, DCPRG, GSCLK, SCLK, SIN, XLAT -40C to +125C 01 -1 1 A VIN= GND, VPRG -2 2 VIN= VCC, VPRG 50 VIN= 21 V, VPRG, DCPRG = VCC10 mA Supply current ICCNo data transfer, all output OFF, VO= 1 V, RIREF= 10 k -40C to +125C 01 6 mA
40、No data transfer, all output OFF, VO= 1 V, RIREF= 1.3 k 12 Data transfer 30 MHz, all output ON, VO= 1 V, RIREF= 1.3 k 16 typical Data transfer 30 MHz, all output ON, VO= 1 V, RIREF= 640 30 typical Constant sink current, IOLCAll output ON, VO= 1 V, +25C 01 54 69 mA see figure 5 RIREF= 640 -40C to +12
41、5C 42 72 Leakage output current ILKGAll output OFF, VO= 15 V, RIREF= 640 , OUT0 to OUT15 -40C to +125C 01 1 A Constant sink current error, IOLC0All output ON, VO= 1 V, RIREF= 640 , OUT0 to OUT15 +25C 01 4 % see figure 5 All output ON, VO= 1 V, 2/ RIREF= 640 , OUT0 to OUT15 -40C to +125C 12 All outpu
42、t ON, VO= 1 V, RIREF= 1300 , OUT0 to OUT15 +25C 4 All output ON, VO= 1 V, 2/ RIREF= 1300 , OUT0 to OUT15 -40C to +125C 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZ
43、E A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 8 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions VCC= 3 V to 5.5 V unless otherwise specifiedTemperature, TADevice type Limits Unit Min Max Constant sink current error, see figure 5 IOLC1Device to device, ave
44、raged 3/ current from OUT0 to OUT15, RIREF= 1920 (20 mA) -40C to +125C 01 -2 + 0.4 typical % Constant sink current error, see figure 5 IOLC2Device to device, averaged 3/ current from OUT0 to OUT15, RIREF= 480 (80 mA) -40C to +125C 01 -2.7 + 2 typical % Line regulation, IOLC3All output ON, VO= 1 V, 4
45、/ +25C 01 4 %/V see figure 5 RIREF= 640 , OUT0 to OUT15 -40C to +125C 11 All output ON, VO= 1 V, 4/ +25C 4 RIREF= 1300 , OUT0 to OUT15 -40C to +125C 4 Load regulation, IOLC4All output ON, VO= 1 V to 3 V, 5/ +25C 01 6 %/V see figure 5 RIREF= 640 , OUT0 to OUT15 -40C to +125C 20 All output ON, VO= 1 V
46、 to 3 V, 5/ +25C 6 RIREF= 1300 , OUT0 to OUT15 -40C to +125C 6 Thermal error flag threshold TTEFJunction temperature 6/ -40C to +125C 01 150 170 C LED open detector threshold VLED-40C to +125C 01 0.4 V Reference voltage output VIREFRIREF= 640 -40C to +125C 01 1.20 1.28 V See footnotes at end of tabl
47、e. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/10610 REV A PAGE 9 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions VCC= 3 V to 5.5 V unless otherwise specifiedTemperature, TADevice type Limits Unit Min Max Rise time tr0SOUT 60C 01 16 ns tr1OUTn, VCC= 5 V, DCn = 3 Fh 30 Fall time tf0SOUT 60C 01 16 ns tf1OUTn, VCC= 5 V, DCn = 3 Fh 30 Propagation delay time
